SMG2301 -2.6A, -20V,RDS(ON) 130m Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & RoHS compliant SC-59 A Description L The SMG2301 is universally preferred for all commercial S 2 industrial surface mount application and suited for low 3 Top View B 1 voltage applications such as DC/DC converters. D G Features J C * Super high dense cell design for extremely low RDS(ON) K H * Reliable and rugged Drain Gate Applications Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm D Source Dim * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G Marking : 2301 S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current Continuous Drain Current 3 Pulsed Drain Current Total Power Dissipation -20 V ±12 V -2.6 A o ID@TA=70 C -2.1 A IDM -10 A 1.38 W 0.01 W/ C ID@TA=25 C o PD@TA=25 C Linear Derating Factor Operating Junction and Storage Temperature Range Unit o VGS 3 Ratings Tj, Tstg o o C -55~+150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SMG2301 -2.6A, -20V,RDS(ON) 130mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) o Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance 2 Symbol Min. Typ. Max. Unit BVDSS -20 _ _ V BVDS/ Tj _ -0.1 _ V/ C VGS(th) -0.5 _ _ V VDS=VGS, ID=-250uA IGSS _ _ ±100 nA VGS=± 12V _ _ -1 uA VDS=-20V,VGS=0 _ _ -10 uA VDS=-16V,VGS=0 _ _ 130 IDSS RDS(ON) _ _ 190 5.2 10 1.36 _ 0.6 _ Total Gate Charge2 Qg _ Gate-Source Charge Qgs _ Gate-Drain ("Miller") Charge Qgd Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Td(ON) _ 5.2 _ Tr _ 9.7 _ Td(Off) _ 19 _ Tf _ 29 _ _ 295 Ciss Output Capacitance Coss Reverse Transfer Capacitance Forward Transconductance _ _ o mΩ Test Condition VGS=0V, ID=-250uA o Reference to 25 C ,ID=-1mA VGS=-5.0V, ID=-2.8A VGS=-2.8V, ID=-2A nC ID=-2.8A VDS=-6.0V VGS=-5.0V VDS=-15V ID=-1A nS VGS=-10V RG=6Ω RD=15Ω _ 170 _ 65 _ pF VGS=0V VDS=-6V VDS=-5V, ID=-2.8A Crss _ Gfs _ 4.4 _ S Symbol Min. Typ. Max. Unit _ _ -1.2 V _ _ -1 A -10 A f=1.0MHz Source-Drain Diode Parameter 2 VSD Continuous Source Current (Body Diode) Is Forward On Voltage Pulsed Source Current (Body Diode) ISM _ _ Test Condition IS=-1.6A, VGS=0V. VD=VG=0V, VS=-1.2V G Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG2301 Elektronische Bauelemente -2.6A, -20V,RDS(ON) 130mΩ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 4 SMG2301 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A -2.6A, -20V,RDS(ON) 130mΩ P-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 4 of 4