SML2955CSM4 P–CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • BVDSS =-60V 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) • ID = -2.5A 0.23 min. (0.009) • RDS(ON) = 0.3Ω • Hermetic Surface Mount Package • Screening Option Available 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) The SML2955CSM4 is a very low on state resistance P-Channel enhancement mode mosfet in a Ceramic Surface Mount package designed for high rel applications: LCC3 PACKAGE (MO-041BA) Underside View PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage -60V VGS Gate – Source Voltage ±20V ID @TA = 25°C IDM Continuous Drain Current Pulsed Drain Current 1 PD Power Dissipation @TA = 25°C 0.8W @TA = 100°C 0.32W -2.5A -15A RθJA Thermal Resistance Junction to Ambient TSTG , TJ Maximum Junction and Storage Temperature Range 156°C/W -55 to +150°C NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5878 Issue 1 SML2955CSM4 ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) Characteristic Test Conditions Min. Typ. Max. Unit -2.6 -4.0 STATIC CHARACTERISTICS V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = -250µA -60 Gate Threshold Voltage1 VDS = VGS ID = -250µA -2.0 IGSS Gate – Source Leakage Current VGS = ±20V VGS = 0V ±100 nA IDSS Zero Gate Voltage Drain Current VDS = -60V VGS = 0V -10 µA On State Drain Current 1 VDS = -5.0V VGS = -10V ID = -2.0A VGS = -4.5V 0.55 ID = -2.5A VGS = -10V 0.35 0.55 Forward Transconductance 1 VGS = -10V TJ = 125°C ID = -2.5A 5.5 Diode Forward Voltage1 VGS = 0V ID = -2.5A -0.8 VDS = -30V f = 1.0MHz VGS(TH) ID(ON) RDS(ON) gfs V SD Drain Source On-State Resistance 1 -12 V A Ω S -1.2 V DYNAMIC CHARACTERISTICS Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg SWITCHING CHARACTERISTICS Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn–on Delay Time tr td(off) tf Rise Time Turn–off Delay Time VGS = 0V VDS = -30V 601 85 pF 35 ID = -2.5A VGS = -10V 11 15 2.4 nC 2.7 ID =-1.0A VDD = -30V VGS = -10V RGEN = 6Ω Fall Time 12 21 10 20 19 34 6 12 ns NOTES: 1) Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5878 Issue 1