SML9030–220M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL MOS TRANSISTOR 1 2 3 –50V 13.2A 0.15W 12.70 19.05 FEATURES • P CHANNEL • REPETITIVE AVALANCHE RATED 0.89 1.14 2.65 2.75 2.54 BSC • DYNAMIC dv/dt RATING • FAST SWITCHING • EASE OF PARALLELING TO–220 – Metal Package Pin 1 – Gate Pin 2 – Drain • SIMPLE DRIVE REQUIREMENTS Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current (VGS = -10V , Tcase = 25°C) 13.2A ID Continuous Drain Current (VGS = -10V , Tcase = 100°C) 8.3A IDM Pulsed Drain Current 1 53A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor 0.36W/°C TJ Operating Junction Temperature –55 to +150°C TSTG Storage Temperature Range –55 to +150°C RqJC Thermal Resistance Junction to Case 2.8°C/W RqJA Thermal Resistance Junction to Ambient 80°C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/97 SML9030–220M ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) BVDSS Parameter Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage VGS = 0 ID = -250mA Min. Reference to 25°C RDS(on) Static Drain – Source On Resistance 1 VGS = -10V ID = 9.3A VGS(th) Gate Threshold Voltage VDS = VGS ID = -250mA -2 VDS = -40V ID = 9.3A 3.1 VDS = -60V VGS = 0 VDS = -48V VGS = 0 gfs IDSS Zero Gate Voltage Drain Current V / °C 0.15 W -4 V S -100 -500 TJ = 125°C IGSS Forward Gate – Source Leakage VGS = -20V -100 IGSS Reverse Gate – Source Leakage VGS = 20V 100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 900 Coss Output Capacitance VDS = -25V 570 Crss Reverse Transfer Capacitance f = 1MHz 140 Qg Qgs Qgd td(on) tr Total Gate Charge 1 1 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time 1 1 1 1 39 VDS = -48V 10 VGS = -10V 15 VDD = -30V 18 ID = 13.2A 170 RG = 12W 32 RD = 1.5W 96 Turn–Off Delay Time tf Fall Time 1 IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current (Body Diode) 2 ISM Pulse Source Current VSD Diode Forward Voltage 1 trr Reverse Recovery Time 1 53 IS = -18A TJ = 25°C IF = -18A TJ = 25°C di / dt = 100A/ms nS A -6.3 V 120 250 ns 0.47 1.1 mC VGS = 0 1 nA nC 13.2 (Body Diode) mA pF ID = 13.2A td(off) Unit V -0.060 ID = -1mA Forward Transconductance Max. -50 DBVDSS Temperature Coefficient of DTJ Breakdown Voltage 1 Typ. Qrr Reverse Recovery Charge LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from 6mm down lead to centre of drain bond pad) 4.5 LS Internal Source Inductance (from 6mm down lead to centre of source bond pad) 7.5 nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/97