SML9030–T254 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) P–CHANNEL MOS TRANSISTOR 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) VDSS ID(cont) RDS(on) 1 2 3 –50V –18A 0.14W FEATURES • P CHANNEL • REPETITIVE AVALANCHE RATED 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • DYNAMIC dv/dt RATING 3.81 (0.150) BSC • EASE OF PARALLELING TO–254 – Metal Package Pin 1 – Drain • FAST SWITCHING Pin 2 – Source • SIMPLE DRIVE REQUIREMENTS Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = -10V , Tcase = 25°C) -18A ID Continuous Drain Current (VGS = -10V , Tcase = 100°C) -13A ±20V 1 IDM Pulsed Drain Current PD Power Dissipation @ Tcase = 25°C -72A Linear Derating Factor EAS Single Pulse Avalanche Energy 88W 0.59W/°C 2 1 370mJ IAR Avalanche Current EAR Repetitive Avalanche Energy 1 dv/dt Peak Diode Recovery 3 TJ Operating Junction Temperature –55 to +175°C TSTG Storage Temperature Range –55 to +200°C RqJC Thermal Resistance Junction to Case 0.6°C/W RqJA Thermal Resistance Junction to Ambient 48°C/W -18A 8.8mJ -4.5V/ns Notes 1) Repetitive Rating: Pulse width limited by maximum junction temperature. 2) @ VDD = -25V , L = 1.3mH , RG = 25W , IAS = -18A , Starting TJ = 25°C. 3) @ ISD £ -18A , di/dt £ 170A/ms , VDD £ BVDSS , TJ £ 175°C. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 1/95 SML9030–T254 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) BVDSS Parameter Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage VGS = 0 ID = -250mA Min. Reference to 25°C RDS(on) Static Drain – Source On Resistance 1 VGS = -10V ID = -11A VGS(th) Gate Threshold Voltage VDS = VGS ID = -250mA -2 VDS = -25V ID = -11A 5.9 VDS = -60V VGS = 0 VDS = -48V VGS = 0 gfs IDSS Zero Gate Voltage Drain Current V / °C 0.14 W -4 V S -100 -500 TJ = 125°C IGSS Forward Gate – Source Leakage VGS = -20V -100 IGSS Reverse Gate – Source Leakage VGS = 20V 100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1100 Coss Output Capacitance VDS = -25V 620 Crss Reverse Transfer Capacitance f = 1MHz 100 Qg Qgs Qgd td(on) tr Total Gate Charge 1 1 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time 1 1 1 1 34 VDS = -48V 9.9 VGS = -10V 16 VDD = -30V 18 ID = -18A 120 RG = 12W 20 RD = 1.5W 58 Turn–Off Delay Time tf Fall Time 1 IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current (Body Diode) 2 ISM Pulse Source Current VSD Diode Forward Voltage 1 trr Reverse Recovery Time 1 -72 IS = -18A TJ = 25°C IF = -18A TJ = 25°C di / dt = 100A/ms nC A -6.3 V 100 200 ns 0.28 0.52 mC VGS = 0 1 nA nC -18 (Body Diode) mA pF ID = -18A td(off) Unit V -0.060 ID = -1mA Forward Transconductance Max. -50 DBVDSS Temperature Coefficient of DTJ Breakdown Voltage 1 Typ. Qrr Reverse Recovery Charge LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from 6mm down lead to centre of drain bond pad) 4.5 LS Internal Source Inductance (from 6mm down lead to centre of source bond pad) 7.5 nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 1/95