SPP08P06P G SIPMOS Power-Transistor Features Product Summary · P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS(on) 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated · 175°C operating temperature • Pb-free lead plating; RoHS compliant Type SPP08P06P G Package PG-TO220-3 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Pin 1 PIN 2/4 PIN 3 G D S Value ID Continuous drain current A T C = 25 °C -8.8 T C = 100 °C -6.2 ID puls Pulsed drain current Unit -35.2 T C = 25 °C EAS 70 EAR 4.2 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 42 W -55...+175 °C Avalanche energy, single pulse mJ I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C T C = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.5 55/175/56 Page 1 2009-04-14 SPP08P06P G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - - 40 K/W Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -250 µA, Tj = 25 °C VGS(th) -2.1 -3 -4 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 150 °C - -10 -100 IGSS - -10 -100 RDS(on) - 0.23 0.3 Gate-source leakage current nA VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -6.2 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.5 Page 2 2009-04-14 SPP08P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 1.5 3.6 - S Ciss - 335 420 pF Coss - 105 135 Crss - 65 95 td(on) - 16 24 tr - 46 69 td(off) - 48 72 tf - 14 21 Dynamic Characteristics Transconductance VDS³2*I D*RDS(on)max , ID = -6.2 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Rise time VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Turn-off delay time VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Fall time VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Rev 1.5 Page 3 2009-04-14 SPP08P06P G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 1.4 2.1 Qgd - 4 6 Qg - 10 15 V(plateau) - -3.85 - Dynamic Characteristics Gate to source charge nC VDD = -48 , ID = -8.8 A Gate to drain charge VDD = -48 V, ID = -8.8 A Gate charge total VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V Gate plateau voltage V VDD = -48 , I D = -8.8 A Parameter Symbol Values Unit min. typ. max. IS - - -8.8 ISM - - -35.2 VSD - -1.17 -1.55 V trr - 60 90 ns Qrr - 100 150 nC Reverse Diode Inverse diode continuous forward current A T C = 25 °C Inverse diode direct current,pulsed T C = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -8.8 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev 1.5 Page 4 2009-04-14 SPP08P06P G Power dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ³ 10 V SPP08P06P SPP08P06P 50 -10 A 40 -8 35 -7 ID Ptot W 30 -6 25 -5 20 -4 15 -3 10 -2 5 -1 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T C = 25 °C parameter : D = tp /T -10 2 SPP08P06P 10 1 SPP08P06P K/W tp = 12.0µs A Z thJC 10 0 -10 1 10 -1 V DS /I D ID 100 µs = D = 0.50 10 -10 0 -2 0.20 R DS ( on ) 1 ms 0.10 10 ms DC 0.05 single pulse 0.02 10 -3 0.01 -10 -1 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 1.5 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2009-04-14 SPP08P06P G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS SPP08P06P -21 SPP08P06P 1.0 Ptot = 42.00W W A -18 VGS [V] a i -16 -14 -4.5 h c -5.0 d -5.5 e -6.0 f -6.5 f g -7.0 h -7.5 ID g -12 -10 e -8 a b c d e f g h -4.0 b i -8.0 j -10.0 0.8 RDS(on) j 0.7 0.6 0.5 0.4 d 0.3 -6 c 0.2 -4 b -2 0.1 a 0 0 -2 -4 -6 V -8 0.0 0 -11 VGS [V] = a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -2 -4 -6 -8 i g h i j -7.0 -7.5 -8.0 -10.0 -10 -12 -14 VDS A j -18 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 6 -30 A S -24 -22 gfs ID -20 -18 -16 4 3 -14 -12 2 -10 -8 -6 1 -4 -2 0 0 -1 Rev 1.5 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Page 6 0 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20 ID 2009-04-14 SPP08P06P G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -6.2 A, V GS = -10 V parameter: VGS = VDS , ID = -250 µA SPP08P06P 1.0 -5.0 W V 98% -4.0 V GS(th) RDS(on) 0.8 0.7 0.6 0.5 -3.5 typ -3.0 -2.5 2% 98% 0.4 -2.0 typ 0.3 -1.5 0.2 -1.0 0.1 -0.5 0.0 -60 -20 20 60 100 140 °C 0.0 -60 200 -20 20 60 100 180 °C Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 2 SPP08P06P A pF Ciss C IF -10 1 10 2 Coss Crss -10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev 1.5 -10 -1 0.0 Page 7 2009-04-14 SPP08P06P G Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -8.8 A pulsed para.: I D = -8.8 A , VDD = -25 V, R GS = 25 W SPP08P06P 80 -16 mJ V -12 VGS E AS 60 50 40 -10 -8 0,2 VDS max 30 -6 20 -4 10 -2 0 25 45 65 85 105 125 145 0 0 °C 185 Tj 2 4 6 0,8 VDS max 8 10 12 nC 15 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP08P06P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 140 °C 200 Tj Rev 1..5 Page 8 2009-04-14 SPP08P06P G PG-TO220-3 Rev 1.5 Page 9 2009-04-14 SPP08P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 Page 10 2009-04-14