SPW17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type SPW17N80C3 Package P-TO247 Ordering Code Q67040-S4359 Marking 17N80C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 17 TC = 100 °C 11 Pulsed drain current, tp limited by Tjmax I D puls 51 Avalanche energy, single pulse EAS 670 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.5 mJ I D = 3.4 A, VDD = 50 V I D = 17 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 17 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 208 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.1 Page 1 2004-03-03 SPW17N80C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 640 V, ID = 17 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=17A Values Unit min. typ. max. 800 - - - 870 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1000µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=800V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.1 RG µA Tj=25°C, - 0.5 25 Tj=150°C - - 250 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=11A, Tj=25°C - 0.25 0.29 Tj=150°C - 0.78 - f=1MHz, open Drain - 0.7 - Page 2 nA 2004-03-03 SPW17N80C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 15 - S pF ID=11A Input capacitance Ciss V GS=0V, V DS=25V, - 2320 - Output capacitance Coss f=1MHz - 1250 - Reverse transfer capacitance Crss - 60 - - 59 - - 124 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=400V, V GS=0/10V, - 25 - Rise time tr ID=17A, RG =4.7Ω, - 15 - Turn-off delay time td(off) Tj=125°C - 72 82 Fall time tf - 6 9 - 12 - - 46 - - 91 177 - 6 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=640V, ID=17A VDD=640V, ID=17A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=640V, ID=17A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 Page 3 2004-03-03 SPW17N80C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 17 - - 51 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , - 550 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 15 - µC Peak reverse recovery current Irrm - 51 - A Peak rate of fall of reverse dirr /dt - 1200 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.00812 R th2 Cth1 0.0003562 0.016 Cth2 0.001337 R th3 0.031 Cth3 0.001831 R th4 0.114 Cth4 0.005033 R th5 0.135 Cth5 0.012 R th6 0.059 Cth6 0.092 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-03 SPW17N80C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 240 10 2 SPW17N80C3 W A 200 10 1 160 ID Ptot 180 140 10 0 120 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 100 80 10 -1 60 40 20 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 70 K/W A 20V 10V 60 10 0 55 50 ID ZthJC 10 V VDS 10 -1 45 8V 40 7V 35 30 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 25 6V 20 15 5V 10 5 10 -4 -7 10 Rev. 2.1 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 5 10 15 20 VDS 30 V 2004-03-03 3 SPW17N80C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 1.5 35 20V 10V 8V 7V 25 Ω 1.3 RDS(on) A 6.5V ID 6V 20 1.2 1.1 4V 4.5V 5V 5.5V 6V 6.5V 1 5.5V 15 0.9 5V 10 5 0 0 5 10 15 20 7V 8V 10V 20V 0.8 4.5V 0.7 4V 0.6 VDS 0.5 0 30 5 10 15 20 A 25 35 ID V 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 11 A, VGS = 10 V parameter: tp = 10 µs 1.6 SPW17N80C3 65 A Ω 25°C 50 1.2 45 ID RDS(on) 55 1 40 35 0.8 150°C 30 25 0.6 20 0.4 98% 15 typ 10 0.2 5 0 -60 -20 20 60 100 °C 180 Tj Rev. 2.1 Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2004-03-03 SPW17N80C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 17 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPW17N80C3 V A 0.2 VDS max 10 1 10 0.8 VDS max IF VGS 12 SPW17N80C3 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 20 40 60 80 100 120 nC 10 -1 0 160 0.4 0.8 1.2 1.6 2 2.4 V QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 3.4 A, V DD = 50 V 18 700 mJ A 600 550 14 EAS IAR 500 12 450 400 10 350 8 300 250 6 200 Tj (START) =25°C 4 150 100 2 0 -3 10 Rev. 2.1 Tj (START) =125°C 10 -2 10 -1 10 0 50 10 1 10 2 µs 10 tAR 4 Page 7 0 25 50 75 100 °C 150 Tj 2004-03-03 SPW17N80C3 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.5mJ 980 SPW17N80C3 500 V W 400 920 900 PAR V(BR)DSS 940 880 860 350 300 250 840 820 200 800 150 780 100 760 50 740 720 -60 -20 20 60 °C 100 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 5 18 pF µJ 10 4 14 Eoss C Ciss 10 3 12 10 10 2 8 Coss 6 10 1 4 Crss 2 10 0 0 Rev. 2.1 100 200 300 400 500 600 V 800 VDS Page 8 0 0 100 200 300 400 500 600 V 800 VDS 2004-03-03 6 SPW17N80C3 Definition of diodes switching characteristics Rev. 2.1 Page 9 2004-03-03 SPW17N80C3 P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Rev. 2.1 Page 10 2004-03-03 SPW17N80C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 11 2004-03-03