SHENZHENFREESCALE SQD90P04-9M4L

SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
- 40
RDS(on) () at VGS = - 10 V
0.0094
RDS(on) () at VGS = - 4.5 V
0.0160
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
- 90
Configuration
• Material categorization:
For definitions of compliance please see
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Single
S
TO-252
G
Drain Connected to Tab
G
D
D
S
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD90P04-9m4L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 90
- 52
IS
- 100
IDM
- 160
IAS
- 50
EAS
125
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS = 0 V, ID = - 250 μA
- 40
-
-
VDS = VGS, ID = - 250 μA
- 1.5
-
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 40 V
VGS = 0 V
VDS = - 40 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 40 V, TJ = 175 °C
-
-
- 150
VGS = - 10 V
VDS- 5 V
- 50
-
-
VGS = - 10 V
ID = - 17 A
-
0.0075
0.0094
VGS = - 10 V
ID = - 50 A, TJ = 125 °C
-
-
0.0147
VGS = - 10 V
ID = - 50 A, TJ = 175 °C
-
-
0.0178
VGS = - 4.5 V
ID = - 14 A
VDS = - 15 V, ID = - 17 A
-
0.0130
0.0160
-
46
-
-
5339
6675
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
852
1065
Reverse Transfer Capacitance
Crss
-
681
855
Total Gate Chargec
Qg
-
103
155
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Qgs
Fall Timec
Source-Drain Diode Ratings and
VGS = - 10 V
VDS = - 20 V, f = 1 MHz
VDS = - 20 V, ID = - 50 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = - 20 V, RL = 0.4 
ID  - 50 A, VGEN = - 10 V, Rg = 1 
tf
pF
-
15
-
-
21
-
nC
1.4
2.8
4.2
-
13
20
-
15
23
-
61
92
-
19
29
-
-
- 160
A
-
- 0.95
- 1.5
V

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 50 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
100
V GS = 10 V thru 5 V
80
60
ID - Drain Current (A)
ID - Drain Current (A)
80
V GS = 4 V
40
20
V GS = 3 V
60
40
T C = 25 °C
20
T C = 125 °C
V GS = 2 V, 1 V
0
T C = - 55 °C
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
15
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
100
0.05
80
0.04
T C = 25 °C
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
5
T C = - 55 °C
60
40
T C = 125 °C
20
0.03
0.02
VGS = 4.5 V
0.01
VGS = 10 V
0
0.00
0
16
32
48
ID - Drain Current (A)
64
80
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
8000
10
C - Capacitance (pF)
6000
VGS - Gate-to-Source Voltage (V)
7000
Ciss
5000
4000
3000
2000
Coss
1000
ID = 50 A
8
VDS = 20 V
6
4
2
Crss
0
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
3/7
35
40
0
20
40
60
80
100
120
Qg - Total Gate Charge (nC)
Gate Charge
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SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 24 A
2.0
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.3
1.7
V GS = 10 V
1.4
1.1
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.8
0.001
0.5
- 50
- 25
0
25
50
75
100
125
150
0
175
0.2
TJ - Junction Temperature (°C)
1.2
Source Drain Diode Forward Voltage
0.10
1.1
0.08
0.8
VGS(th) Variance (V)
ID = 250 μA
0.06
0.04
0.02
T J = 25 °C
0
0
0.5
ID = 5 mA
0.2
- 0.1
T J = 150 °C
2
4
6
8
VGS - Gate-to-Source Voltage (V)
- 0.4
- 50
10
- 25
0
On-Resistance vs. Gate-to-Source Voltage
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
- 45
ID = 10 mA
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
- 47
- 49
- 51
- 53
- 55
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100 μs
10
1 ms
10 ms
ID - Drain Current (A)
100
100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
1
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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1000
SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10 -4
0.05
0.02
Single Pulse
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
Disclaimer
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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