SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20, 40 VOLTS Features • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Stress Protection Pb−Free Packages are Available Mechanical Characteristics • • • • • • • • • SMA CASE 403D PLASTIC Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Human Body Model, 3B (> 8000 V) Machine Model, B (> 200 V) MARKING DIAGRAM SS1x AYWWG SS1x x A Y WW G = Specific Device Code = 2 or 4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device SS12T3 SS12T3G SS14T3 SS14T3G Package Shipping † SMA 5000/Tape & Reel SMA (Pb−Free) 5000/Tape & Reel SMA 5000/Tape & Reel SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 3 1 Publication Order Number: SS12/D SS12, SS14 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Value VRRM VRWM VR SS12 SS14 Average Rectified Forward Current (At Rated VR, TC = 120°C) Unit V 20 40 IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 120°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 60 A Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) RqJL 35 RqJA 86 VF TJ = 25°C ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) see Figure 2for other Values (IF = 1.0 A) IR Maximum Instantaneous Reverse Current see Figure 4 for other Values V 0.47 TJ = 25°C TJ = 100°C 0.045 0.1 2.0 5.0 (VR = 20 V) (VR = 40 V) mA 1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 100°C 1 TJ = 25°C TJ = 150°C TJ = −55°C 0.1 0.10 0.30 0.50 0.70 0.90 TJ = 100°C 1 TJ = 25°C TJ = 150°C TJ = −55°C 0.1 0.10 0.30 0.50 0.70 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.90 SS12, SS14 IR, MAXIMUM REVERSE CURRENT (A) 100E−3 IR, REVERSE CURRENT (A) 100E−3 10E−3 TJ = 150°C 1E−3 TJ = 100°C TJ = 150°C 10E−3 TJ = 100°C 1E−3 100E−6 100E−6 10E−6 TJ = 25°C 1E−6 0 10 20 30 VR, INSTANTANEOUS FORWARD VOLTAGE (V) 40 TJ = 25°C 10E−6 1E−6 0 Figure 3. Typical Reverse Current 40 Figure 4. Maximum Reverse Current 1.8 0.25 freq = 20 kHz dc 1.6 PFO, AVERAGE POWER DISSIPATION (W) IO, AVERAGE FORWARD CURRENT (A) 10 20 30 VR, REVERSE VOLTAGE (V) 1.4 1.2 Square Wave 1 Ipk/IO = 5 0.6 Ipk/IO = 10 0.4 Ipk/IO = 20 0.2 Ipk/IO = 5 Ipk/IO = p Ipk/IO = 20 0.15 Ipk/IO = p 0.8 Ipk/IO = 10 0.1 Square Wave dc 0.05 0.2 0 0 25 45 65 85 105 125 145 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 1.8 1000 C, CAPACITANCE (pF) r(t), TRANSIENT THERMAL RESISTANCE TJ = 100°C D = 0.10 D = 0.50 D = 0.20 100 100 P(pk) 10 D = 0.05 1 Single Pulse 10 0 5 10 15 20 25 30 35 40 0.1 0.00001 0.0001 0.001 0.01 45 t1 D = 0.01 Test Type > Min Pad Theta JC = min pad 1 oz C/W 0.1 1.0 10 VR, REVERSE VOLTAGE (V) t, TIME (sec) Figure 7. Capacitance Figure 8. Thermal Response http://onsemi.com 3 t2 Duty Cycle, D = t1/t2 100 1000 SS12, SS14 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE C HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 c MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L MILLIMETERS NOM MAX 2.16 2.41 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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