SS8050 NPN Epitaxial Silicon Transistor Features • • • • 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V 1.5 A IC Collector Current PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 hFE2 hFE3 DC Current Gain VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA 45 85 40 300 VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.5 V VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 1.2 V VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA Output Capacitance VCB=10V, IE=0, f=1MHz Current Gain Bandwidth Product VCE=10V, IC=50mA Cob fT 1 V 9.0 pF 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 © 2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 www.fairchildsemi.com 1 SS8050 — NPN Epitaxial Silicon Transistor July 2010 1000 0.5 0.4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 1V IB = 3.0mA IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 10 100 1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10000 100 IC = 10 IB VCE = 1V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1 VBE(sat) 1000 100 VCE(sat) 10 0.1 1 10 100 10 1 0.1 0.0 1000 1000 0.8 1.0 1.2 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz Cob [pF], CAPACITANCE 0.6 Figure 4. Base-Emitter On Voltage Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 10 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE VCE = 10V 100 10 1 1 10 100 400 IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product © 2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1 0.2 www.fairchildsemi.com 2 SS8050 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics SS8050 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 14.47 ±0.40 0.46 ±0.10 +0.10 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 0.38 –0.05 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 ±0.20 (R2.29) Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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