SSM630GP
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
200V
R DS(ON)
400mΩ
ID
9A
DESCRIPTION
The SSM630GP achieves fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
Pb-free; RoHS-compliant TO-220
The SSM630GP is in TO-220 for through-hole mounting
where a small footprint is required on the board, and/or an
external heatsink is to be attached.
G
D
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
S
TO-220 (suffix P)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VDS
Drain-source voltage
200
V
VGS
Gate-source voltage
±30
V
ID
Continuous drain current, TC = 25°C
9
A
5.7
A
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
3
Units
36
A
74
W
0.59
W/°C
240
mJ
EAS
Single pulse avalanche energy
IAR
Avalanche current
9
A
EAR
Repetitive avalanche energy
7
mJ
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
RΘ JC
Maximum thermal resistance, junction-case
1.7
°C/W
RΘ JA
Maximum thermal resistance, junction-ambient
62
°C/W
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, VDD=50V , L=4.5mH , RG=25Ω , IAS=9A.
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SSM630GP
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
200
-
-
V
-
0.248
-
V/°C
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=5A
-
-
400
mΩ
VGS(th)
Gate threshold voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward transconductance
VDS=10V, ID=5A
-
40
-
S
IDSS
Drain-source leakage current
VDS=200V, VGS=0V
-
-
10
uA
VDS=160V ,VGS=0V, Tj = 150°C
-
-
25
uA
VGS=±30V
-
-
±100
nA
ID=9A
-
25
-
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=160V
-
3.6
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=10V
-
14
-
nC
VDS=100V
-
8
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=9A
-
26
-
ns
td(off)
Turn-off delay time
RG=10Ω , VGS=10V
-
34
-
ns
tf
Fall time
RD=11Ω
-
22
-
ns
Ciss
Input capacitance
VGS=0V
-
515
-
pF
Coss
Output capacitance
VDS=25V
-
90
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
IS= 9A, VGS=0V
-
-
1.3
V
VD=VG=0V , VS=1.3V
-
-
36
A
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
VSD
Forward voltage
IS
Continuous source current (body diode)
I SM
Pulsed source current (body
diode)1
-
-
Max. Units
9
A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
8/22/2006 Rev.3.1
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SSM630GP
10
V G =10V
T C =25 o C
14
V G =10V
V G =8.0V
V G =8.0V
V G =7.0V
8
ID , Drain Current (A)
12
ID , Drain Current (A)
T C =150 o C
10
V G =6.0V
8
6
V G =7.0V
V G =6.0V
6
4
V G =5.0V
4
2
V G =5.0V
V G =4.0V
2
V G =4.0V
0
0
0
2
4
6
8
10
12
0
14
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I D =5A
V G =10V
2.5
Normalized R DS(ON)
Normalized BVDSS (V)
1.1
1
2
1.5
1
0.9
0.5
0.8
0
-50
0
50
100
150
-50
0
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS vs. Junction
Temperature
8/22/2006 Rev.3.1
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM630GP
10
80
8
6
PD (W)
ID , Drain Current (A)
60
40
4
20
2
0
0
25
50
75
100
125
0
150
50
100
150
T c , Case Temperature ( o C)
Tc , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1
Normalized Thermal Response (R thjc)
100
10us
10
ID (A)
100us
1ms
10ms
1
100ms
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
SINGLE PULSE
T
0.01
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
o
T c =25 C
Single Pulse
0.01
0
1
10
100
1000
0.00001
0.0001
V DS (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
8/22/2006 Rev.3.1
0.001
Fig 8. Effective Transient Thermal Impedance
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SSM630GP
f=1.0MHz
10000
16
I D =9A
V DS =80V
12
V DS =120V
Ciss
V DS =160V
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
Crss
4
2
0
1
0
5
10
15
20
25
30
35
1
11
21
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
4
10.00
3.5
T j =150 o C
VGS(th) (V)
IS (A)
T j =25 o C
1.00
0.10
3
2.5
2
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
Fig 11. Forward Characteristic of
Reverse Diode
8/22/2006 Rev.3.1
50
100
150
T j Junction Temperayure ( o C)
V SD (V)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM630GP
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
8/22/2006 Rev.3.1
Q
Fig 16. Gate Charge Waveform
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SSM630GP
PHYSICAL DIMENSIONS - TO-220
E
A
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
L
c
b
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
L1
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
e
PART MARKING - TO-220
PACKING:
Moisture sensitivity level MSL3
1000pcs in tubes packed inside a
moisture barrier bag (MBB).
630GP
YWWSSS
PART NUMBER: 630GP = SSM630GP
DATE/LOT CODE:
Y = last digit of the year
WW = work week (01 -> 52)
SSS = lot code sequence
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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