ST 2SA952 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three group, M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 700 mA Base Current -IB 150 mA Power Dissipation Ptot 600 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group M L K at -VCE = 1 V, -IC = 700 mA C C Symbol Min. Max. Unit hFE hFE hFE hFE 90 135 200 50 180 270 400 - - -ICBO - 100 nA -IEBO - 100 nA Collector Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA -VCE(sat) - 0.6 V Base Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA -VBE(sat) - 1.2 V -VBE 0.6 0.7 V fT 50 - MHz COB - 40 pF Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Base Emitter Voltage at -VCE = 6 V, -IC = 10 mA Gain Bandwidth Product at -VCE = 6 V, -IE = 10 mA Collector to Base Capacitance at -VCB = 6 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/05/2008 ST 2SA952 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 24/05/2008