ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES • Metal case with ceramic insulator • All diffused design RoHS • Center amplifying gate COMPLIANT • International standard case TO-200AB (A-PUK) • Guaranteed high dV/dt TO-200AB (A-PUK) • Guaranteed high dI/dt • High surge current capability • Low thermal impedance • High speed performance PRODUCT SUMMARY IT(AV) TYPICAL APPLICATIONS 370 A • • • • Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t TEST CONDITIONS Ths Ths UNITS 370 A 55 °C 690 A 25 °C 50 Hz 4900 60 Hz 5130 50 Hz 120 60 Hz 110 A VDRM/VRRM tq VALUES Range TJ kA2s 400 to 800 V 10 to 20 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 ST183C..C Document Number: 94368 Revision: 30-Apr-08 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 For technical questions, contact: [email protected] www.vishay.com 1 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM UNITS 100 µs 180° el 50 Hz 770 660 1220 1160 5450 4960 400 Hz 730 600 1270 1090 2760 2420 1000 Hz 600 490 1210 1040 1600 1370 2500 Hz 350 270 860 730 800 680 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 VDRM VDRM VDRM 50 - - Rise of on-state current dI/dt Heatsink temperature 40 Equivalent values for RC circuit 55 47/0.22 40 55 47/0.22 A V A/µs 40 55 °C Ω/µF 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one half cycle, non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled A 55 (85) °C 690 t = 10 ms 4900 t = 8.3 ms t = 10 ms t = 10 ms I2t UNITS DC at 25 °C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 370 (130) t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 5130 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 4310 120 110 85 I2√t t = 0.1 to 10 ms, no voltage reapplied 1200 Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.40 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.45 Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.67 High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 For technical questions, contact: [email protected] kA2s 78 Maximum I2√t for fusing www.vishay.com 2 A 4120 kA2√s V mΩ mA Document Number: 94368 Revision: 30-Apr-08 ST183CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current dI/dt Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code minimum Maximum turn-off time TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt maximum VALUES UNITS 1000 A/µs 1.1 10 µs 20 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/µs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp ≤ 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 Ω TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, ± 10 % Approximate weight Case style Document Number: 94368 Revision: 30-Apr-08 See dimensions - link at the end of datasheet For technical questions, contact: [email protected] °C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) www.vishay.com 3 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.015 0.016 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 90 Ø Conduction angle 80 70 60 30° 50 60° 180° 90° Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 ST183C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 110 100 90 Ø 80 Conduction angle 70 60 50 30° 40 120° 30 0 80 40 120 160 200 240 0 Fig. 3 - Current Ratings Characteristics 130 130 ST183C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 110 100 90 Ø 80 Conduction period 70 60 50 30° 60° 90° 40 DC 120° 180° 30 ST183C..C Series (Double side cooled) RthJC (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (°C) 120 Maximum Allowable Heatsink Temperature (°C) 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Ratings Characteristics 110 100 90 Ø 80 Conduction period 70 60 50 90° 40 30° 180° 60° 30 20 DC 120° 20 0 50 100 150 200 250 300 350 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics www.vishay.com 4 180° 90° 60° 40 120° 400 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 4 - Current Ratings Characteristics For technical questions, contact: [email protected] Document Number: 94368 Revision: 30-Apr-08 ST183CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 1000 5000 180° 120° 90° 60° 30° 800 700 600 RMS limit 500 400 Ø 300 Conduction angle 200 4000 3500 3000 2500 ST183C..C Series TJ = 125 °C 100 100 150 200 250 300 350 400 450 50 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled DC 180° 120° 90° 60° 30° 1200 1000 800 RMS limit 600 Ø 400 Conduction period 200 ST183C..C Series TJ = 125 °C 0 100 200 400 300 500 600 Instantaneous On-State Voltage (A) Average On-State Current (A) 0 10 000 ST183C..C Series 1000 TJ = 25 °C TJ = 125 °C 100 700 1 Average On-State Current (A) 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics Fig. 6 - On-State Power Loss Characteristics 1 4500 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 ST183C..C Series ZthJ-hs - Transient Themal Impedance (K/W) Peak Half Sine Wave On-State Current (A) 0.1 Fig. 5 - On-State Power Loss Characteristics 1400 Maximum Average On-State Power Loss (W) ST183C..C Series 2000 0.01 0 0 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 4500 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 900 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST183C..C Series 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 94368 Revision: 30-Apr-08 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics For technical questions, contact: [email protected] www.vishay.com 5 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A 160 ITM = 500 A ST183C..C Series TJ = 125 °C 200 200 A 150 100 A 100 50 A 50 120 100 80 60 40 ST183C..C Series TJ = 125 °C 20 0 0 0 20 40 60 80 100 0 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 50 Hz 500 400 200 100 1500 1000 2500 3000 5000 ST183C..C Series Sinusoidal pulse TC = 40 °C tp 10 000 10 000 Peak On-State Current (A) 10 000 Peak On-State Current (A) ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 140 300 A Irr - Maximum Reverse Recovery Current (A) Qrr - Maximum Reverse Recovery Charge (µC) 250 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 1000 1500 1000 2500 3000 5000 tp 10 000 100 50 Hz 400 200 100 ST183C..C Series Sinusoidal pulse TC = 55 °C 100 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 400 200 100 50 Hz 500 1000 1500 1000 2500 3000 5000 tp ST183C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 50 A/µs 100 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 400 200 100 50 Hz 1000 1500 1000 2500 3000 tp 5000 ST183C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 50 A/µs 100 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94368 Revision: 30-Apr-08 ST183CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 370 A 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 50 Hz 1000 500 2500 Peak On-State Current (A) Peak On-State Current (A) 10 000 400 200 100 1500 3000 5000 100 ST183C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 100 A/µs 10 000 tp Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 50 Hz 1000 1500 2500 500 1000 400 200 100 3000 100 5000 ST183C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 100 A/µs 10 000 tp 10 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics 100 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 10 000 1 0.5 0.3 1000 2 4 10 0.2 0.1 100 ST183C..C Series Sinusoidal pulse tp ST183C..C Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 2 4 10 1 1000 0.2 0.3 0.5 0.1 100 tp 10 10 10 100 1000 10 10 000 100 1000 10 000 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs IGD 0.01 tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 40 °C VGD 0.1 0.001 (a) TJ = 25 °C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (b) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST183C..C Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94368 Revision: 30-Apr-08 For technical questions, contact: [email protected] www.vishay.com 7 ST183CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 370 A ORDERING INFORMATION TABLE Device code ST 18 3 C 08 C H K - 1 P 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (A-PUK) 7 - Reapplied dV/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals (gate and aux. cathode unsoldered leads) dV/dt - tq combinations available dV/dt (V/µs) 10 12 tq (µs) 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN* FM FL* FP FK 400 HN HM HL HP HK 1 = Fast-on terminals * Standard part number. (gate and aux. cathode unsoldered leads) All other types available only on request. 2 = Eyelet terminals (gate and aux. cathode soldered leads) 3 = Fast-on terminals (gate and aux. cathode soldered leads) 10 - 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95074 For technical questions, contact: [email protected] Document Number: 94368 Revision: 30-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1