ST 2SC3195 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application VHF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 4 V Collector Current IC 20 mA Emitter Current IE -20 mA Ptot 100 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC3195 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 100 - 200 - ICBO - - 0.5 μA IEBO - - 0.5 μA fT - 550 - MHz Cre - 0.7 - pF Cc,rbb’ - - 20 ps NF - 2.5 5 dB Gpe - 18 - dB DC Current Gain at VCE=6V, IC=1mA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=4V Transition Frequency at VCE=6V, IC=1mA Reverse Transfer Capacitance at VCE=6V, f=1MHz Collector Base Time Constant at VCE=6V, IE=-1mA, f=30MHz Noise Figure at VCC=6V, f=100MHz, IE=-1mA Power Gain at VCC=6V, f=100MHz, IE=-1mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002