Bulletin I25154 rev. C 04/00 ST330C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 650A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK) High profile hockey-puk Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AC (B-PUK) Major Ratings and Characteristics Parameters ST330C..L Units 650 A 55 °C 1230 A 25 °C @ 50Hz 9000 A @ 60Hz 9420 A @ 50Hz 405 KA2s @ 60Hz 370 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 It VDRM /VRRM tq typical TJ www.irf.com 400 to 1600 V 100 µs - 40 to 125 °C 1 ST330C..L Series Bulletin I25154 rev. C 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /VRRM , max. repetitive VRSM , maximum non- IDRM /I RRM max. Code peak and off-state voltage repetitive peak voltage @ T J = TJ max V V mA 400 500 Type number 04 ST330C..L 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 50 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature ST330C..L Units Conditions 650 (314) A 180° conduction, half sine wave 55 (75) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1230 I TSM Max. peak, one-cycle 9000 non-repetitive surge current 9420 DC @ 25°C heatsink temperature double side cooled t = 10ms A 7570 I 2t Maximum I2t for fusing V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 370 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s 4050 KA 2√s Low level value of on-state V (I > π x IT(AV)),TJ = TJ max. 0.93 High level value of on-state slope resistance (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max. 0.57 slope resistance r t2 t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.91 voltage r t1 100% VRRM 405 262 Maximum I2√t for fusing reapplied t = 10ms 7920 287 I 2√ t No voltage t = 8.3ms mΩ (I > π x IT(AV) ),TJ = TJ max. 0.57 V TM Max. on-state voltage 1.90 IH Maximum holding current 600 IL Typical latching current 1000 V mA I = 1730A, TJ = TJ max, t = 10ms sine pulse pk p T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current ST330C..L 1000 td Typical delay time 1.0 t Typical turn-off time 100 Units Conditions A/µs µs 2 q Gate drive 20V, 20Ω, tr ≤ 1µs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs www.irf.com ST330C..L Series Bulletin I25154 rev. C 04/00 Blocking Parameter ST330C..L Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs T J = TJ max. linear to 80% rated V DRM IRRM IDRM Max. peak reverse and off-state leakage current 50 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST330C..L Maximum peak gate power Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT VGD T J = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms mA T J = 25°C DC gate voltage required - 100 200 50 - 2.5 - 1.8 3.0 1.1 - DC gate current not to trigger DC gate voltage not to trigger p p MAX. 200 T J = - 40°C DC gate current required to trigger IGD A 5.0 TYP. to trigger p T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 2.0 gate voltage -VGM T J = TJ max, t ≤ 5ms 10.0 PG(AV) Maximum average gate power IGM Units Conditions 10 0.25 T J = 125°C T J = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25°C T J = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST330C..L TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F wt Mounting force, ± 10% Approximate weight Case style www.irf.com Units °C 0.11 0.06 0.011 Conditions DC operation single side cooled K/W K/W 0.005 DC operation double side cooled DC operation single side cooled DC operation double side cooled 9800 N (1000) (Kg) 250 g TO - 200AC (B-PUK) See Outline Table 3 ST330C..L Series Bulletin I25154 rev. C 04/00 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side Conduction angle Units 180° 0.012 0.010 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 33 0 C 16 L 1 1 2 3 4 5 6 7 1 - 2 - Essential part number 3 - 0 = Converter grade 8 Thyristor 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST330C..L Series Bulletin I25154 rev. C 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 2 7 (1 . 0 6 ) M AX . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 5 8 .5 (2 .3 ) D I A . M A X . 4.7 (0.18) Case Style TO-200AC (B-PUK) All dimensions in millimeters (inches) 36.5 (1.44) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 130 ST330C..L Series (Single Side Cooled) R thJ- hs (D C) = 0.11 K/W 120 110 100 90 C o ndu ctio n A ng le 80 70 30° 60 60° 90° 120° 180° 50 40 30 0 50 100 150 200 250 300 350 400 450 Average On -state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com M a x im u m A llo w a b le H e a t sin k T e m p e ra t ure (° C ) Maximum Allowable Heatsink Temperatu re ( °C) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 130 ST 3 3 0 C ..L Se rie s (Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 1 K / W 120 110 100 90 C o ndu ctio n Pe riod 80 70 60 50 30° 40 60° 90 ° 12 0° 30 1 80° 20 0 2 00 4 00 DC 60 0 80 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 5 ST330C..L Series ST 3 3 0 C ..L Se rie s (D o ub le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 5 K / W 120 110 100 90 C on duc tio n Ang le 80 70 60 30 ° 40 120° 180 ° 30 20 0 2 00 4 00 600 80 0 1200 110 100 90 Co n duc tio n Pe riod 80 70 30° 60 60° 50 90 ° 1 20° 40 180 ° 30 DC 20 0 2 00 40 0 6 00 8 00 1 00 0 1 2 00 1 40 0 Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics RMS L im it 1000 800 600 Co n duc tio n A ng le 400 ST330C..L Series T J = 125°C 200 0 0 ST 3 3 0 C ..L Se rie s (D o ub le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 5 K/ W 120 A v e ra g e O n - sta t e C u rre n t (A ) 180° 120° 90° 60° 30° 1400 130 A v e ra g e O n - sta t e C u rre n t (A ) 1600 2200 DC 180° 120° 90° 60° 30° 2000 1800 1600 1400 1200 RMS L im it 1000 800 C o ndu ctio n Pe rio d 600 ST330C..L Series T J = 125°C 400 200 0 0 100 200 300 400 500 600 700 800 200 400 600 800 1000 1200 1400 Average O n-state Current (A) Average O n-state Curren t (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 8 00 0 A t A n y R a t e d Lo a d C o n d itio n A n d W it h R a t e d V RRM A p p lie d F o llo w in g Su rg e . In it ia l T J = 1 2 5 ° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 7 50 0 7 00 0 6 50 0 6 00 0 5 50 0 5 00 0 4 50 0 S T 3 3 0 C ..L S e r ie s 4 00 0 3 50 0 1 6 90° Maximum Average O n-state Power Loss (W ) 50 60° M a x im u m A llo w a b le H e a tsin k T e m p e ra tu re (° C ) 130 10 100 Peak Half Sine Wave On-state Curren t (A) P e a k H a lf Sin e W a v e O n -st a t e C u rre n t (A ) Maximum Average On-state Power L oss (W) M a x im u m A llo w a b le H e a t sin k T e m p e ra t ure (°C ) Bulletin I25154 rev. C 04/00 9000 M axim um Non Repetitive Surge Current V ersus Pulse T rain Dura tion. Con trol 8000 Of Conduction May Not Be Maintain ed. Initial TJ = 125°C 7500 No V oltag e Rea pplied Rated V RRM Rea pplied 7000 8500 6500 6000 5500 5000 4500 4000 ST330C..L Series 3500 0.01 0.1 1 N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N ) Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST330C..L Series Bulletin I25154 rev. C 04/00 In st a n t a n e o u s O n -sta t e C u rre n t (A ) 1 0 0 00 TJ = 25° C T J = 1 2 5 °C 1 0 00 ST 3 3 0 C ..L Se rie s 10 0 0 .5 1 1 .5 2 2 . 5 3 3 . 5 4 4 .5 5 5 . 5 6 6 .5 7 In st a n t a n e o u s O n - st a te V o lt a g e (V ) T ra n sie n t Th e rm al Im p e da n c e Z thJ-hs ( K/W ) Fig. 9 - On-state Voltage Drop Characteristics 1 St e a d y St a t e V a lu e R thJ-hs = 0 .1 1 K / W ( Sin gle Sid e C o o le d ) 0 .1 R thJ-hs = 0 .0 5 K / W ( D o u ble S id e C o o le d ) ( D C O p e rat io n ) 0 .0 1 ST 3 3 0 C ..L Se r ie s 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Sq u a re W a v e P ulse D ur at io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 In sta n t a n e o u s G at e V o lta g e ( V ) R e c t a n g ula r g a t e p ulse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra t e d d i/ d t : 1 0 V , 1 0 o h m s 10 tr< = 1 µs (1) (2) (3) (4) PGM PGM PGM PG M = = = = 10W , 20W , 40W , 60W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s (a ) (b ) Tj=-40 °C Tj=2 5 °C Tj=125 °C 1 (1) (2) (3) (4) VG D IG D 0. 1 0 .0 0 1 0 .0 1 Fre q u e n c y L im ite d b y P G ( A V ) D e v ic e : ST 3 3 0 C ..L S e rie s 0 .1 1 10 1 00 In sta n t a n e o u s G a te C u rre n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7