STD3NB30 N-CHANNEL 300V - 1.8Ω - 3.2A DPAK PowerMesh MOSFET ■ ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STD3NB30 300 V < 2Ω 3.2 A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 1 DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID Parameter 300 V Drain-gate Voltage (RGS = 20 kΩ) 300 V Gate- source Voltage ±30 V Drain Current (continuos) at TC = 25°C 3.2 A Drain Current (continuos) at TC = 100°C Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor Tstg Tj Unit Drain-source Voltage (VGS = 0) IDM (●) dv/dt(1) Value Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 2 A 12.8 A 45 W 0.36 W/°C 4 V/ns –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1)I SD ≤3.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. May 2001 1/9 STD3NB30 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.77 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 3.2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 190 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V V(BR)DSS Min. Typ. Max. 300 Unit V 1 VDS = Max Rating, TC = 125 °C µA 50 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.5 A Min. Typ. Max. Unit 2 3 4 V 1.8 2 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Min. Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 2.5 A 2.1 S VDS = 25V, f = 1 MHz, VGS = 0 260 pF C iss Input Capacitance Coss Output Capacitance 56 pF Crss Reverse Transfer Capacitance 7 pF STD3NB30 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 150V, I D = 2.5 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 9 ns 9 ns VDD = 240V, I D = 5 A, VGS = 10V 12 16 nC 7.5 nC 3 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 240V, I D = 5 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 10 ns 7 ns 15 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3.2 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 5 A, di/dt = 100A/µs, VDD = 100V, T j = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 3.2 A 12.8 A 1.5 V 180 ns 800 nC 9 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STD3NB30 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD3NB30 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD3NB30 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD3NB30 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 7/9 STD3NB30 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. DIM. A0 B0 B1 D mm MIN. MAX. MIN. 6.8 10.4 7 10.6 0.267 0.275 0.409 0.417 1.5 12.1 1.6 0.476 0.059 0.063 MAX. D1 1.5 E 1.65 1.85 0.065 0.073 F K0 7.4 2.55 7.6 2.75 0.291 0.299 0.100 0.108 P0 P1 3.9 7.9 4.1 8.1 0.153 0.161 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 * on sales type 8/9 inch 0.059 1.574 16.3 0.618 0.641 MIN. 330 MAX. A B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0.795 G 16.4 18.4 0.645 0.724 N 50 T TAPE MECHANICAL DATA MAX. inch BASE QTY 2500 12.992 0.059 1.968 22.4 0.881 BULK QTY 2500 STD3NB30 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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