STMICROELECTRONICS STL150N3LLH6

STL150N3LLH6
N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT™ (6x5)
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STL150N3LLH6
30 V
0.0024 Ω
33 A (1)
1. The value is rated according Rthj-pcb
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
High avalanche ruggedness
■
Low gate drive power losses
■
Very low switching gate charge
PowerFLAT™ ( 6x5 )
Application
■
Figure 1.
Switching applications
Internal schematic diagram
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Table 1.
Device summary
Order code
Marking
Package
Packaging
STL150N3LLH6
150N3LLH6
PowerFLAT™ (6x5)
Tape and reel
September 2009
Doc ID 15345 Rev 2
1/12
www.st.com
12
Contents
STL150N3LLH6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
Doc ID 15345 Rev 2
STL150N3LLH6
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
± 20
V
ID(1)
Drain current (continuous) at TC = 25 °C
150
A
ID (1)
Drain current (continuous) at TC = 100 °C
93
A
ID(2)
Drain current (continuous) at TC = 25 °C
33
A
(2)
Drain current (continuous) at TC=100 °C
20.8
A
(3)
Drain current (pulsed)
132
A
PTOT (1)
Total dissipation at TC = 25 °C
80
W
(3)
Total dissipation at TC = 25 °C
4
W
0.03
W/°C
-55 to 150
°C
ID
IDM
PTOT
Derating factor
TJ
Operating junction temperature
Storage temperature
Tstg
1. The value is rated according Rthj-c
2. The value is rated according Rthj-pcb
3. Pulse width limited by safe operating area
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain) (steady state)
1.56
°C/W
Thermal resistance junction-ambient
31.3
°C/W
Value
Unit
Rthj-pcb
(1)
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4.
Symbol
Avalanche data
Parameter
IAV
Not-repetitive avalanche current,
(pulse width limited by Tj Max)
20
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV )
200
mJ
Doc ID 15345 Rev 2
3/12
Electrical characteristics
2
STL150N3LLH6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 16.5 A
VGS= 4.5 V, ID= 16.5 A
V(BR)DSS
Table 6.
Symbol
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
1
V
Ω
Ω
0.0016
0.0025
0.0024
0.0035
Min.
Typ.
Max.
Unit
-
pF
pF
pF
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
-
4040
740
425
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 33 A
VGS =4.5 V
(see Figure 14)
-
40
16.3
15.8
-
nC
nC
nC
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
-
1.4
-
Ω
RG
4/12
On/off states
Doc ID 15345 Rev 2
STL150N3LLH6
Electrical characteristics
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
VDD=15 V, ID= 16.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min.
Typ.
Max.
Unit
-
17
18
75
46
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
Source drain diode
Parameter
Test conditions
Source-drain current
-
33
A
(1)
Source-drain current (pulsed)
-
132
A
(2)
Forward on voltage
ISD = 33 A, VGS=0
-
1.1
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A,
di/dt = 100 A/µs,
VDD=25 V
-
ISDM
VSD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
trr
Qrr
IRRM
34
35
2.1
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 15345 Rev 2
5/12
Electrical characteristics
STL150N3LLH6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM04953v1
ID
(A)
Tj=150°C
Tc=25°C
Operation in this area is
Limited by max RDS(on)
100
Sinlge
pulse
10
10ms
100ms
1s
1
0.1
0.01
0.1
Figure 4.
ID
(A)
350
10
1
VDS(V)
Output characteristics
AM03998v1
VGS=10V
300
300
AM03999v1
ID
(A)
VDS=1V
250
5V
250
200
4V
200
150
150
100
100
3V
50
50
0
0
Figure 6.
4
2
Normalized BVDSS vs temperature
AM04903v1
BVDSS
(norm)
0
0
VDS(V)
1.06
Figure 7.
2
4
6
8
10 VGS(V)
Static drain-source on resistance
AM04905v1
RDS(on)
(mΩ)
4.5
VGS=10V
4.0
ID=250µA
1.04
3.5
3.0
1.02
2.5
1.00
2.0
1.5
0.98
1.0
0.96
0.94
-50
6/12
0.5
0
50
100
150 TJ(°C)
0.0
0
Doc ID 15345 Rev 2
20
40
60
80
ID(A)
STL150N3LLH6
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM04000v1
VGS
(V)
VDD=15V
12
Capacitance variations
AM00893v1
C
(pF)
f=1MHz
ID=80A
6100
10
4600
8
6
Ciss
3100
4
1600
Coss
2
Crss
0
0
Figure 10.
40
20
60
80
100 Qg(nC)
100
0
5
15
10
20
25
VDS(V)
Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
AM04901v1
VGS(th)
(norm)
ID=250µA
1.1
AM04902v1
RDS(on)
(norm)
1.6
ID=40A
VGS=10V
1.4
1.0
1.2
0.8
1.0
0.8
0.6
0.6
0.4
0.4
0.2
0.2
-50
0
50
150 TJ(°C)
100
0
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM04906v1
VSD
(V)
TJ=-50°C
1.0
0.9
0.8
TJ=25°C
0.7
TJ=175°C
0.6
0.5
0.4
0
20
40
60
80
ISD(A)
Doc ID 15345 Rev 2
7/12
Test circuits
3
STL150N3LLH6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
Doc ID 15345 Rev 2
10%
AM01473v1
STL150N3LLH6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 15345 Rev 2
9/12
Package mechanical data
STL150N3LLH6
PowerFLAT™(6x5) mechanical data
DIM.
A
mm.
Min.
Min.
0.031
0.83
0.93
0.02
0.05
A3
0.20
0.35
D
D2
0.40
0.47
0.013
4.20
0.32
0.036
0.0007
0.0019
0.015
0.163
0.165
E
6.00
0.236
5.75
0.226
E2
3.43
3.48
3.53
E4
2.58
2.63
2.68
0.70
0.80
L
0.018
0.187
4.25
E1
e
Max.
0.196
4.75
4.15
Typ.
0.007
5.00
D1
10/12
inch
Max.
A1
b
0.80
Typ.
0.135
1.27
0.167
0.137
0.139
0.103
0.105
0.050
0.90
Doc ID 15345 Rev 2
0.027
0.031
0.035
STL150N3LLH6
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
21-Jan-2009
1
First release
08-Sep-2009
2
Document status promoted from preliminary data to datasheet
Doc ID 15345 Rev 2
11/12
STL150N3LLH6
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
Doc ID 15345 Rev 2