STM5853 P Channel Mode MOSFET with Schottky -3.6A DESCRIPTION STM5853 is the P-Channel logic enhancement mode power field effect transistors with Schottky Diode. The MOSFET is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. This device is particularly suited for charging switch for cellular phone and other battery powered circuits PIN CONFIGURATION DFN8 FEATURE J: Part Marking X: Year Code A: Process Code z -20V/-3.4A, RDS(ON) = 77m-ohm(Typ.) @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 98m-ohm @VGS = -2.5V z -20V/-1.7A, RDS(ON) = 135m-ohm @VGS = -1.8V z 20V/1.0A, Vf =0.46V @ 0.5A z Super high density cell design for extremely low RDS(ON) ORDERING INFORMATION Part Number Package Part Marking STM5853QF8RG DFN8 SYA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ STM5853QF8RG QF8 : QFN8; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 STM5853 P Channel Mode MOSFET with Schottky -3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Reverse Voltage (Schottky) VKA 20 V Gate-Source Voltage VGSS +/-12 V ID -3.6 -2.8 A IDM -15 A Continuous Source Current (Diode Conduction) IS -1.8 A Power Dissipation PD 2.1 1.1 W Continuous Drain Current (TJ=150 ℃) TA=25℃ TA=70℃ Pulsed Drain Current TA=25℃ TA=70℃ Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 60 ℃/W All data are for MOSFET unless otherwise noted. STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 STM5853 P Channel Mode MOSFET with Schottky -3.6A ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted ) MOSFET Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) -0.8 100 -1 -5 gfs VSD 0.077 0.098 0.135 6 -0.8 Total Gate Charge Gate-Source Charge Qg Qgs VDS=-6V, VGS =-4.5V ID=-2.8A 4.8 1.0 Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qgd Ciss Coss Crss VDS=-6V, VGS =0V f=1MHz 1.0 485 85 40 Turn-On Time td(on) tr td(off) tf Forward Transconductance Diode Forward Voltage V V nA uA A VGS =-4.5V, ID=3.4A VGS =-2.5V, ID=-2.4A VGS =-1.8V, ID=-1.7A VDS =-5V, ID=-2.8V IS=-1.6A,V VGS=0V Drain-source On-Resistance RDS(on) VGS=0V,ID=-250uA -20 VDS=VGS,ID=-250uA -0.35 VDS=0V,VGS=+/-12V VDS=-20V,VGS=0V VDS=-20V, VGS =0V Tj=55℃ VDS≦-5V, VGS =-4.5V -6.0 Ω -1.2 S V Dynamic Turn-Off Time SCHOTTKY Forward Voltage Drop VF Max Reverse Leakage Current IR Junction Capacitance CT VDD=-6V,RL=6Ω ID=-1A,VGEN=-4.5V RG=6Ω IF=0.5A IF=0.5A, Tj=125C VR=20V VR=20V, Tj=85C VR=10V 8 nC pF 10 13 18 15 25 60 70 60 0.38 0.33 0.46 0.4 100 1000 31 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 nS V V nA pF STM5853 P Channel Mode MOSFET with Schottky -3.6A TYPICAL CHARACTERICTICS (25℃ unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 STM5853 P Channel Mode MOSFET with Schottky -3.6A TYPICAL CHARACTERICTICS (25℃ unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 STM5853 P Channel Mode MOSFET with Schottky -3.6A TYPICAL CHARACTERICTICS (25℃ unless noted) Schottky STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1 STM5853 P Channel Mode MOSFET with Schottky -3.6A DFN8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STM5853 2008. V1