STT6601 (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. FEATURES z z z z z APPLICATIONS N-Channel 30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V 30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V P-Channel -30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V -30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V -30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design z z z z Battery powered systems Portable devices Power management in NB DC to DC converter, load switch, DSC, LCD display inverter PACKAGE DIMENSIONS Week code: A~Z (1~26); a ~ z (27 ~ 52) REF. Millimeter Min. Max. A A1 A2 c D E E1 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. Millimeter Min. Max. L L1 0.45 Ref 0.60 Ref 0° 10° b e e1 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Power Dissipation Continuous Source Current (Diode Conduction) Thermal Resistance- Junction to Ambient T ≦ 10 sec Steady State Operating Junction and Storage Temperature Range 01-June-2007 Rev. C VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ PD @TA=70℃ IS RθJA Tj, Tstg Ratings N-Channel P-Channel 30 ±12 2.8 2.3 10 -30 ±12 -2.8 -2.1 -8 1.15 0.75 1.25 -1.4 50 52 90 90 -55 ~ +150 Unit V V A A W A ℃/W ℃ Page 1 of 6 STT6601 (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Breakdown N-Ch Voltage P-Ch Gate Threshold Voltage Forward Transconductance Gate Leakage Current N-Ch P-Ch N-Ch BVDSS VGS(th) Total Gate Charge Gate-Source Charge Gate-Drain Charge -30 - - 0.8 - 1.6 -0.4 -1.0 V V VGS=0, ID=250uA VGS=0, ID=-250uA VDS=VGS, ID=250uA VDS=VGS, ID=-250uA - - - ±100 - - ±100 - - 1 - - -1 - - 10 - - -10 6 - - -6 - - N-Ch - 0.048 0.068 VGS=10V, ID=2.8A P-Ch - 0.077 0.105 VGS=-10V, ID=-2.8A - 0.054 0.078 - 0.092 0.120 N-Ch - 0.079 0.108 VGS=2.5V, ID=1.5A P-Ch - 0.118 0.150 VGS=-2.5V, ID=-1.5A - 4.2 6 - 5.8 - - 0.6 - - 0.8 - - 1.5 - - 1.5 - - 2.5 - - 6 - - 2.5 - - 3.9 - - 20 - - 40 - - 4 - - 15 - N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch 01-June-2007 Rev. C - 4 P-Ch Turn-off Time - Test Conditions - P-Ch N-Ch Turn-on Time 30 Unit - IGSS IDSS P-Ch Drain-Source On-Resistance Max. 4.6 Zero Gate Voltage Drain Current P-Ch On-State Drain Current Typ. - gfs N-Ch (Tj=25℃) Min. ID(on) RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf S nA VDS=4.5V, ID=-6.0A VDS=-10V, ID=-2.8A VDS= 0 V, VGS=±12 V VDS= 0 V, VGS=±12 V VDS=24 V, VGS=0 V uA VDS=-24V, VGS=0 V VDS=24V, VGS=0 V, TJ=55℃ VDS=-24V, VGS=0 V, TJ=55℃ A Ω VDS ≧ 5V, VGS=10 V VDS ≦ -5V, VGS= -10 V VGS=4.5V, ID=2.3A VGS=-4.5V, ID=-2.5A nC N-Channel VDS=15V, VGS=4.5V , ID=2.0A P-Channel VDS=-15V, VGS=-4.5V ,ID=-2.0A ns N-Channel VDD=15V RL=10Ω VGEN=10V RG=3Ω P-Channel VDD=-15V RL=15Ω VGEN=-10V RG=3Ω Page 2 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) 01-June-2007 Rev. C Page 3 of 6 STT6601 Elektronische Bauelemente 01-June-2007 Rev. C (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET Page 4 of 6 STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (N-Channel) 01-June-2007 Rev. C Page 5 of 6 STT6601 Elektronische Bauelemente 01-June-2007 Rev. C (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET Page 6 of 6