STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE DIMENSIONS REF. Millimeter Min. Max. A A1 A2 c D E E1 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 θ b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Thermal Resistance Junction-ambient3 Max. Operating Junction and Storage Temperature Range 1 01-June-2005 Rev. A Symbol VDS VGS VGS@ 4.5V, ID @TA=25℃ VGS@ 4.5V, ID @TA=70℃ IDM PD @TA=25℃ RθJA Tj, Tstg Ratings 30 ±12 6.1 4.9 30 1.14 0.01 110 -55 ~ +150 Unit V V A A W W/℃ ℃/W ℃ Page 1 of 4 STT3434 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0, ID = 250uA Gate Threshold Voltage VGS(th) 0.6 - - V VDS = VGS, ID = 1mA gfs - 20 - S VDS = 10V, ID = 6.1A IGSS - - ±100 nA VGS = ±12 V - - 1 - - 5 - - 34 - - 50 Qg - 8 12 Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 2.6 - Td(on) - 21 - Tr - 45 - Td(off) - 40 - Tf - 30 - Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current (Tj=25℃) Zero Gate Voltage Drain Current (Tj=75℃) Drain-Source On-Resistance2 Total Gate Charge IDSS RDS(ON) 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time uA mΩ Test Conditions VDS = 30 V, VGS = 0 V VDS = 24 V, VGS = 0 V VGS = 4.5 V, ID = 6.1 A VGS = 2.5 V, ID = 2.0 A nC ID = 6.1 A VDS = 15 V VGS = 4.5 V ns VDS = 15 V ID = 1 A VGS = 4.5 V RG = 6 Ω RL = 15 Ω ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Forward On Voltage2 Reverse Recovery Time Notes: 2 Symbol Min. Typ. Max. Unit Test Conditions VSD - - 1.2 V IS = 1.7 A, VGS = 0 V Trr - 40 - ns IS = 1.7 A, dl/dt = 100A/us 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle ≦ 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, t ≦ 5 sec; 180°C/W when mounted on Min. copper pad. 01-June-2005 Rev. A Page 2 of 4 STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 4 STT3434 Elektronische Bauelemente 01-June-2005 Rev. A 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET Page 4 of 4