SECOS STT6405

STT6405
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is
suitable for use as a load switch or in PWM applications.
FEATURES
z
z
z
N-Channel
Lower Gate Charge
Small Footprint & Low Profile Package
PACKAGE DIMENSIONS
REF.
Millimeter
Min.
Max.
A
A1
A2
c
D
E
E1
1.10 Max
0
0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 Ref
0.60 Ref
0°
10°
0.30
0.50
0.95 Ref
1.90 Ref
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Parameter
3
Thermal Resistance- Junction to Ambient
01-June-2005 Rev. A
Max.
Symbol
VDS
VGS
ID @TA=25℃
ID @TA=70℃
IDM
PD @TA=25℃
Unit
Tj, Tstg
Ratings
-30
±12
-5.0
-4.2
-20
2
0.016
-55 ~ +150
Symbol
Ratings
Unit
RθJA
62.5
℃/W
V
V
A
A
W
W/℃
℃
Page 1 of 4
STT6405
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min
Typ Max
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS = 0, ID= -250 uA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS = VGS, ID= -250 uA
IGSS
-
-
±100
nA
VGS = ±20 V
-
-
-1
-
-
-5
-
-
50
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=55℃)
Static Drain-Source On-Resistance2
Forward Transconductance
IDSS
RDS(ON)
75
gfs
-
8.6
-
Qg
-
14.7
18
Gate-Source Charge
Qgs
-
2
-
Gate-Drain (“Miller”) Charge
Qgd
-
3.8
-
Td(on)
-
8.3
-
Tr
-
5
-
Td(off)
-
29
-
Tf
-
14
-
Input Capacitance
Ciss
-
700
840
Output Capacitance
Coss
-
120
-
Reverse Transfer Capacitance
Crss
-
75
-
Rg
-
10
-
Total Gate Charge
2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
uA
mΩ
S
VDS = -30 V, VGS = 0
VDS = -24 V, VGS = 0
VGS = -10 V, ID = -5.0 A
VGS = -4.5 V, ID = -4.0 A
VDS = -5V, ID = -5.0A
nC
ID = -5.0 A
VDS = -15 V
VGS = -10 V
ns
VDS = -15 V
VGS = -10 V
RG = 3 Ω
RL = 3 Ω
pF
VGS = 0 V
VDS = -15 V
f = 1.0 MHz
Ω
f=1.0 MHz
SOURCE-DRAIN DIODE
Parameter
Forward On Voltage2
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
Symbol Min
Typ Max
Unit
Test Conditions
VSD
-
-
-1.0
V
IS = -1.0 A, VGS= -0 V
Trr
-
23.5
-
ns
IS = -5.0A, VGS=0V, dl/dt=
Qrr
-
13.4
-
nC
100A/us
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 156℃/W when mounted on Min. copper pad.
01-June-2005 Rev. A
Page 2 of 4
STT6405
Elektronische Bauelemente
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
01-June-2005 Rev. A
Page 3 of 4
STT6405
Elektronische Bauelemente
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
01-June-2005 Rev. A
Page 4 of 4