SSP1027 -3.5 A, -20 V, RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications. FEATURES z z Low On-Resistance Low Gate Charge PACKAGE DIMENSIONS TDFN PIN#1 Indent J S1 G1 D2 B D1 D2 C E 1 6 D1 G1 2 5 G2 D2 3 4 S2 K G Side View H Bottom View A B Millimeter Min. Max. 1.900 2.100 1.900 2.100 C 0.650 D E 0.203 REF 0.000 0.050 REF. S1 F A D D1 G2 S2 I 0.800 REF. F G H I J K Millimeter Min. Max. 0.520 0.720 0.650 TYP 0.200 MIN 0.150 0.350 0.900 1.100 0.250 0.350 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ TJ, TSTG Ratings -20 ±12 -3.5 -2.8 -15 0.7 0.006 -55 ~ +150 Unit V V A W W/℃ ℃ Symbol RθJA Ratings 98 Unit ℃/W A THERMAL DATA Parameter Thermal Resistance Junction-ambient3 (Max) 01-June-2003 Rev. A Page 1 of 4 SSP1027 -3.5 A, -20 V, RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0, ID = -250 uA Gate Threshold Voltage VGS(th) -0.35 - -0.8 V VDS = VGS, ID = -250 uA Gate Leakage Current IGSS - - ±100 nA VDS = 0 V, VGS = ±12 V - - -1 - - -5 ID(on) -6 - - A VDS ≦ -5 V, VGS = -4.5 V Forward Transconductance gfs - 6 - S VDS = -5 V, ID = -2.8 A Diode Forward Voltage VSD - -0.8 -0.2 V IS = -1.5 A, VGS = 0 V - 76 95 VGS = -4.5 V, ID = -3.4 A - 97 120 mΩ VGS = -2.5 V, ID = -2.4 A - 123 145 VGS = -1.8 V, ID = -1.7 A Drain-Source Leakage Current (Tj=25℃) Drain-Source Leakage Current (Tj=70℃) On-State Drain Current Drain-Source On-Resistance IDSS RDS(ON) uA VDS = -20 V, VGS = 0 VDS = -20 V, VGS = 0, TJ = 55°C Dynamic 2 Qg - 4.8 8 Gate-Source Charge Qgs - 1.0 - Gate-Drain Charge Qgd - 1.0 - Td(on) - 10 16 Tr - 13 23 Td(off) - 18 25 Tf - 15 20 Input Capacitance Ciss - 485 - Output Capacitance Coss - 85 - Reverse Transfer Capacitance Crss - 40 - Total Gate Charge Turn-on Time Rise Time Turn-off Time Fall Time Notes: nC ID = -2.8 A VDS = -6 V VGS = -4.5 V nS VDD = -6 V ID = -1 A VGEN = -4.5 V RG = 6 Ω RL = 6 Ω pF VGS = 0 V VDS = -6 V f = 1.0 MHz 1. Pulse width limited by maximum junction temperature. 2. Pulse width≦300us, dutycycle≦2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad. 01-June-2003 Rev. A Page 2 of 4 SSP1027 Elektronische Bauelemente -3.5 A, -20 V, RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES 01-June-2003 Rev. A Page 3 of 4 SSP1027 Elektronische Bauelemente -3.5 A, -20 V, RDS(ON) 97 mΩ P-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES (con’d) 01-June-2003 Rev. A Page 4 of 4