STTH2003CT/CG/CF/CR/CFP ® HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) K A1 2 x 10 A K A2 VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns A2 FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY INSULATED PACKAGES: ISOWATT220AB, TO-220FPAB Electric insulation: 2000VDC Capacitance: 12pF A1 D2PAK STTH2003CG A2 A1 ■ A2 ■ ■ DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB, I2PAK or D2PAK, this device is especially intended for secondary rectification. A1 K K I2PAK STTH2003CR TO-220AB STTH2003CT A2 A1 A2 K A1 K ISOWATT220AB STTH2003CF TO-220FPAB STTH2003CFP ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 30 A 10 20 A 110 A 5 A -65 + 175 °C 175 °C IF(AV) Average forward current δ = 0.5 TO-220AB / D2PAK / I2PAK Tc=140°C ISOWATT220AB Tc=125°C TO-220FPAB Tc=115°C Per diode Per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRSM Non repetitive avalanche current tp = 20 µs square Tstg Storage temperature range Tj Maximum operating junction temperature August 2003 - Ed: 7D 1/8 STTH2003CT/CG/CF/CR/CFP THERMAL RESISTANCES Symbol Rth (j-c) Parameter Value Unit 2.5 1.3 3.9 3.2 4.6 4 0.1 °C/W TO-220AB / D2PAK / I2PAK Per diode Total Per diode Total Per diode Total Coupling ISOWATT220AB Coupling 2.5 TO-220FPAB Coupling 3.5 2 Junction to case 2 TO-220AB / D PAK / I PAK ISOWATT220AB TO-220FPAB Rth (c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR* VF** Parameter Tests conditions Reverse leakage current VR = 300 V Forward voltage drop IF = 10 A Min. Typ. Tj = 25°C 30 Tj = 125°C Max. Unit 20 µA 300 1.25 Tj = 25°C Tj = 125°C V 0.85 1 Typ. Max. Unit 25 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.025 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM 2/8 Irr = 0.25 A dIF/dt = - 50 A/µs IR = 1 A Min. Tj = 25°C 35 VR = 30 V IF = 10 A dIF/dt = 100 A/µs VFR = 1.1 x VF max. Tj = 25°C Vcc = 200V dIF/dt = 200 A/µs Tj = 125°C IF = 10 A 230 ns 3.5 V 0.3 8 A STTH2003CT/CG/CF/CR/CFP Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). P1(W) IFM(A) 14 δ = 0.05 δ = 0.1 δ = 0.2 200 δ = 0.5 100 12 Tj=125°C 10 δ=1 8 Tj=25°C 10 6 Tj=75°C T 4 2 δ=tp/T IF(av) (A) tp 12 VFM(V) 1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / D2PAK / I2PAK). Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB). 0 0 2 4 6 8 10 Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.8 0.8 δ = 0.5 δ = 0.5 0.6 0.6 δ = 0.2 0.4 0.2 δ = 0.2 0.4 δ = 0.1 δ = 0.1 T 0.2 Single pulse δ=tp/T tp(s) 0.0 1E-3 1E-2 1E-1 T Single pulse tp 1E+0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). 0.0 1E-2 1E-1 1E+0 tp 1E+1 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) IRM(A) 100 16 VR=200V Tj=125°C 14 12 VR=200V Tj=125°C IF=2*IF(av) 80 IF=IF(av) IF=IF(av) 10 60 8 IF=2*IF(av) IF=0.5*IF(av) 6 4 40 IF=0.5*IF(av) 20 2 0 δ=tp/T tp(s) dIF/dt(A/µs) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 200 250 300 350 400 450 500 3/8 STTH2003CT/CG/CF/CR/CFP Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor 0.60 VR=200V Tj=125°C 0.50 0.40 0.30 0.20 0.10 dIF/dt(A/µs) 0.00 0 50 100 150 200 250 300 350 400 450 500 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode) (TO-220AB). Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Tj(°C) 50 75 100 125 tfr(ns) 500 10 IF=IF(av) Tj=125°C 8 VFR=1.1*VF max. IF=IF(av) Tj=125°C 400 6 300 4 200 2 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (D2PAK). Rth(j-a) (°C/W) 80 70 60 50 40 30 20 10 0 IRM Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). VFP(V) 0 S factor S(Cu) (cm²) 0 4/8 5 10 15 20 25 30 35 40 0 0 50 100 150 200 250 300 350 400 450 500 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. Millimeters Inches A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters) D2PAK 16.90 10.30 5.08 1.30 3.70 8.90 5/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. Millimeters Inches A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 REF. Millimeters Inches A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G 6/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A B H Dia L6 L2 L7 L3 L5 D F1 L4 F G1 G Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 F2 E Inches 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 7/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E A A1 b b1 b2 c c2 D e E L L1 L2 c2 L2 D L1 A1 b2 L b1 b Millimeters Min. 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 c e Ordering code Marking Package Weight Base qty Delivery mode STTH2003CT STTH2003CT TO-220AB 2.2 g 50 Tube STTH2003CG STTH2003CG D PAK 1.48 g 50 Tube STTH2003CG-TR STTH2003CG D2PAK 1.48 g 500 Tape & reel STTH2003CF STTH2003CF ISOWATT220AB 2.08 g 50 Tube STTH2003CFP STTH2003CFP TO-220FPAB 2.08 g 50 Tube 1.49 g 50 Tube STTH2003CR ■ ■ ■ ■ 2 STTH2003CR 2 I PAK Cooling method: by conduction (C) Recommended torque value: 0.55 N.m. Maximum torque value: 0.70 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8