STMICROELECTRONICS STU14NA50

STU14NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STU14NA50
■
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
500 V
< 0.36 Ω
14 A
TYPICAL RDS(on) = 0.31 Ω
EFFICIENT AND RELAIBLE MOUNTING
THROUGH CLIP
± 30V GATE TO SOURCE VOLTAGE RATING
REPETITIVE AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
Max220TM
DESCRIPTION
The Max220 TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
500
V
Drain- gate Voltage (R GS = 20 kΩ)
500
V
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at T c = 25 o C
14
A
ID
o
Drain Current (continuous) at T c = 100 C
8.8
A
Drain Current (pulsed)
56
A
V GS
I DM (•)
P tot
T stg
Tj
o
Total Dissipation at T c = 25 C
160
W
Derating Factor
1.28
W/ o C
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
October 1997
1/5
STU14NA50
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
o
0.78
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Value
Unit
14
A
980
mJ
Max
Max
Typ
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 50 V)
EAR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
39
mJ
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
8.8
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Min.
Typ.
Max.
500
VGS = 0
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
I GSS
Gate-body Leakage
Current (V DS = 0)
Unit
V
T c = 100 o C
V GS = ± 30 V
25
50
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
V DS = VGS
R DS(on)
Static Drain-source On
Resistance
V GS = 10V I D = 7A
V GS = 10V I D = 7A
ID(on)
Min.
Typ.
Max.
Unit
2.25
3
3.75
V
0.31
0.36
0.72
Ω
Ω
T c = 100 o C
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
14
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 7 A
V GS = 0
Min.
Typ.
8.5
11
2750
380
105
Max.
Unit
S
3600
500
140
pF
pF
pF
STU14NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt)on
Qg
Q gs
Q gd
Parameter
Test Conditions
Turn-on Time
Rise Time
V DD = 250 V
R G = 4.7 Ω
Turn-on Current Slope
V DD = 400 V
R G = 47 Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
Min.
ID = 7 A
V GS = 10 V
I D = 14 A
Typ.
Max.
Unit
36
53
48
70
ns
ns
I D = 14 A
V GS = 10 V
160
A/µs
V GS = 10 V
115
16
53
150
nC
nC
nC
Typ.
Max.
Unit
52
24
80
68
32
105
ns
ns
ns
Typ.
Max.
Unit
14
56
A
A
1.6
V
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 400 V
R G = 4.7 Ω
Min.
I D = 14 A
V GS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 14 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 14 A
V DD = 100 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
650
ns
12.3
µC
38
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STU14NA50
Max220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.2
2.4
0.087
0.094
A2
2.9
3.1
0.114
0.122
b
0.7
0.93
0.027
0.036
b1
1.25
1.4
0.049
0.055
b2
1.2
1.38
0.047
0.054
c
0.45
0.6
0.18
0.023
D
15.9
16.3
0.626
0.641
D1
9
9.35
0.354
0.368
D2
0.8
1.2
0.031
0.047
D3
2.8
3.2
0.110
0.126
e
2.44
2.64
0.096
0.104
E
10.05
10.35
0.396
0.407
L
13.2
13.6
0.520
0.535
L1
3
3.4
0.118
0.133
D1
D2
A1
A2
A
C
D3
b
b2
b1
D
e
E
L1
L
P011R
4/5
STU14NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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