STMICROELECTRONICS STX724

STX724
NPN MEDIUM POWER TRANSISTORS
Features
■
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
■
IN COMPLIANCE WITH THE 2002/93/EC
EUROPEAN DIRECTIVE
Applications
■
VOLTAGE REGULATION
■
RELAY DRIVER
■
GENERIC SWITCH
TO-92
Description
The STX724 is a NPN transistor manufactured
using planar Technology resulting in rugged high
performance devices.
Internal Schematic Diagram
Order codes
Part Number
Marking
Package
Packing
STX724
X724
TO-92
BULK
October 2005
Rev 1
1/9
www.st.com
9
STX724
1 Electrical Ratings
1
Electrical Ratings
Table 1.
Absolute Maximum Rating
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
60
V
VCEO
Collector-Emitter Voltage (IB = 0)
30
V
VEBO
Collector-Base Voltage (IC = 0)
5
V
Collector Current
3
A
Collector Peak Current (tP < 5ms)
6
A
Base Current
1
A
IBM
Base Peak Current (tP < 5ms)
2
A
PTOT
Total dissipation at Tc = 25°C
0.9
W
TSTG
Storage Temperature
-65 to 150
150
°C
Value
Unit
IC
ICM
IB
TJ
Table 2.
Symbol
Max. Operating Junction Temperature
Thermal Data
Parameter
Rthj-case
Thermal Resistance Junction-Case ____________________Max
44.6
°C/W
Rthj-amb
Thermal Resistance Junction-Amb ____________________Max
139
°C/W
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STX724
2
2 Electrical Characteristics
Electrical Characteristics
Table 3.
Symbol
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off Current
(V BE = 0)
VCE = 60V
10
μA
ICEO
Collector Cut-off Current
(IB = 0)
VCE = 30V
100
μA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
10
μA
Collector-Base
Breakdown Voltage (IE = 0)
IC = 100μA
60
V
V(BR)CEO Collector-Emitter Breakdown
Note 1 Voltage (IB = 0)
IC = 10 mA
30
V
Collector-Emitter Breakdown
Voltage (IC = 0)
IE = 100 μA
5
V
V(BR)CBO
V(BR)EBO
VCE(sat)
Note 1
VBE(sat)
Note 1
hFE
fT
IC = 1 A
IB = 50 mA
IC = 2 A
IB = 100 mA
IC = 3 A
Base-Emitter Saturation Voltage IC = 2 A
Collector-Emitter Saturation
Voltage
DC Current Gain
Transistor Frequency
IB = 150 mA
0.4
0.7
1.1
V
V
V
IB = 100 mA
1.2
V
IC = 100 mA
VCE = 2 V
IC = 1 A
VCE = 2 V
IC = 3 A
VCE = 2 V
V CE = 10 V
Ic= 0.1 A
100
80
30
300
100
MHz
1 Pulsed duration = 300 μs, duty cycle ≤1.5%.
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STX724
2 Electrical Characteristics
2.1
Electrical characteristics (curve)
Figure 1.
DC Current Gain
Figure 3.
Collector-emitter saturation voltage Figure 4.
Base-emitter saturation voltage
Figure 5.
Switching times on resistive load
Switching times resistive on load
4/9
Figure 2.
Figure 6.
DC Current Gain
STX724
Figure 7.
2 Electrical Characteristics
Reverse biased area
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3 Package Mechanical Data
3
STX724
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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STX724
3 Package Mechanical Data
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.194
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.094
0.105
e1
1.14
1.40
0.044
0.055
L
12.70
15.49
0.50
0.610
R
2.16
2.41
0.085
0.094
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
V
5°
0.022
5°
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STX724
4 Revision History
4
8/9
Revision History
Date
Revision
17-Oct-2005
1
Changes
First release
STX724
4 Revision History
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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