STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh™ V Power MOSFET in Max247 package Datasheet — preliminary data Features Order code VDSS @TJmax RDS(on) max ID STY145N65M5 710 V < 0.015 Ω 138 A ■ Max247 worldwide best RDS(on) ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 1 2 3 Max247 Applications ■ Figure 1. Switching applications Internal schematic diagram Description $ The device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STY145N65M5 145N65M5 Max247 Tube January 2013 Doc ID 023718 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/13 www.st.com 13 Contents STY145N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 023718 Rev 2 STY145N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 138 A ID Drain current (continuous) at TC = 100 °C 87 A IDM (1) Drain current (pulsed) 552 A PTOT Total dissipation at TC = 25 °C 625 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 17 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 2420 mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W 300 °C VGS dv/dt(2) Tstg Tj Parameter Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 138 A, di/dt = 400 A/µs, VDD = 400 V, peak VDS < V (BR)DSS. Table 3. Symbol Tl Thermal data Parameter Maximum lead temperature for soldering purpose Doc ID 023718 Rev 2 3/13 Electrical characteristics 2 STY145N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.012 0.015 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 69 A resistance Table 5. Symbol 3 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 18500 413 11 - pF pF pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 1950 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 415 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 0.7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 69 A, VGS = 10 V (see Figure 15) - 414 114 164 - nC nC nC Ciss Coss Crss 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/13 Doc ID 023718 Rev 2 STY145N65M5 Electrical characteristics Table 6. Symbol td(v) tr(v) tf(i) tc(off) Table 7. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 85 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 255 11 82 88 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 138 552 A A ISD = 138 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 138 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) - 568 14.5 51 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 138 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) - 728 24.5 67 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 023718 Rev 2 5/13 Electrical characteristics STY145N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance !-V )$ ! AM09125v1 K ON / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A $ 3 IS δ=0.5 0.2 S 0.1 S 0.05 -1 MS 10 0.02 0.01 MS 4J # 4C # 3INLGE PULSE Figure 4. tp τ -2 10 -4 10 6$36 Output characteristics )$ ! 6'36 6 Figure 6. !-V 6$36 6$36 Gate charge vs gate-source voltage Figure 7. 6'3 6 tp (s) 10 Transfer characteristics )$ ! -1 10 6 -2 -3 10 Figure 5. !-V Zth=k Rthj-c δ=tp/τ Single pulse 6$3 6$$6 !-V 6$3 6 6'36 Static drain-source on-resistance !-V 2$3ON M/HM 6'36 )$! 6/13 1GN# Doc ID 023718 Rev 2 )$! STY145N65M5 Figure 8. Electrical characteristics Capacitance variations Figure 9. !-V # P& Output capacitance stored energy !-V %OSS * #ISS #OSS #RSS 6$36 Figure 10. Normalized gate threshold voltage vs temperature AM08899v1 VGS(th) (norm) 6$36 Figure 11. Normalized on-resistance vs temperature AM08900v1 RDS(on) (norm) 1.10 2.1 ID= 250µA VDS= VGS ID = 69A VGS= 10V 1.00 1.7 0.90 1.3 0.80 0.9 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Normalized BVDSS vs temperature AM10399v1 VDS (norm) 0.5 -50 -25 ID = 1mA 50 75 100 TJ(°C) AM15555v1 E (μJ) 8000 1.06 25 Figure 13. Switching losses vs gate resistance(1) 9000 1.08 0 Eon VDD=400 V VGS=10 V ID=85 A 7000 1.04 6000 1.02 5000 1.00 3000 0.96 2000 0.94 1000 0.92 -50 -25 Eoff 4000 0.98 0 25 50 75 100 TJ(°C) 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. Doc ID 023718 Rev 2 7/13 Test circuits 3 STY145N65M5 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 19. Switching time waveform #ONCEPTWAVEFORMFOR)NDUCTIVE,OAD4URNOFF )D VD )D 6DS OFF 4DELAYOFF IDM 6GS 6GS ON ID 6GS)T VDD VDD 6DS )D 6DS 4R ISE AM01472v1 8/13 Doc ID 023718 Rev 2 4FALL 4CROSS OVER !-V STY145N65M5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 023718 Rev 2 9/13 Package mechanical data Table 8. STY145N65M5 Max247 mechanical data mm Dim. Min. 10/13 Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Doc ID 023718 Rev 2 STY145N65M5 Package mechanical data Figure 20. Max247 drawing 0094330_Rev_D Doc ID 023718 Rev 2 11/13 Revision history 5 STY145N65M5 Revision history Table 9. 12/13 Document revision history Date Revision Changes 25-Sep-2012 1 First release. 17-Jan-2013 2 – Modified: IAR and EAS values – Modified: typical values on Table 5, 6 and 7 Doc ID 023718 Rev 2 STY145N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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