New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT APPLICATIONS • Load Switch TO-220AB S G DRAIN connected to TAB G D S D Top View P-Channel MOSFET Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C - 46.8 ID 9.2b Pulsed Drain Current IDM - 150 Avalanche Current Pulse IAS - 45 EAS 101 Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C 69 IS TC = 70 °C TA = 25 °C A 104.2a 66.7a PD W 3.1b 2.0b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range mJ a 2.1b TC = 25 °C Maximum Power Dissipation A - 8.1b TA = 70 °C Single Pulse Avalanche Energy V - 53a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit 33 0.98 40 1.2 °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. Document Number: 68633 S-80897-Rev. A, 21-Apr-08 www.vishay.com 1 New Product SUP53P06-20 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 68 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -3 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS = - 5 V, VGS = - 10 V - 5.2 -1 - 120 A VGS = - 10 V, ID = - 30 A 0.016 0.0195 VGS = - 4.5 V, ID = - 20 A 0.020 0.025 VDS = - 15 V, ID = - 50 A µA 20 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 3500 VDS = - 25 V, VGS = 0 V, f = 1 MHz VDS = - 30 V, VGS = - 10 V, ID = - 55 A 76 115 38 60 VDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 16 tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = - 2.0 V, RL = 2.0 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf Fall Time nC 19 td(on) Turn-On Delay Time pF 390 290 Ω 5.2 10 15 7 15 70 110 40 60 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 69 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 150 IS = - 30 A IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C A - 1.0 - 1.5 V 45 68 ns 59 120 nC 29 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68633 S-80897-Rev. A, 21-Apr-08 New Product SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 100 VGS = 10 thru 6 V 80 VGS = 5 V 120 80 VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 160 40 60 40 TC = 125 °C 20 TC = 25 °C VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-SourceVoltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 100 8 80 gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C 6 4 TC = 125 °C 2 TC = 25 °C 60 TC = 125 °C 40 20 TC = 25 °C TC = - 55 °C 0 0 0 1 2 3 4 5 0 12 24 48 60 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Transconductance 0.05 5000 0.04 4000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 36 0.03 VGS = 4.5 V 0.02 Ciss 3000 2000 VGS = 10 V 1000 0.01 Coss Crss 0 0.00 0 20 40 60 80 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 68633 S-80897-Rev. A, 21-Apr-08 100 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 New Product SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 ID = 20 A VDS = 20 V 6 VDS = 30 V 4 1.7 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 55 A VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 2 0.5 - 50 0 0 20 40 60 80 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Gate-to-Source Voltage 0.10 100 ID = 20 A TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.08 TJ = 25 °C 10 0.06 0.04 TJ = 150 °C 0.02 TJ = 25 °C 0.00 1 0.0 0.3 0.6 0.9 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1000 75 ID = 10 mA 72 V(BR)DSS - (V) I Dav - (A) 100 10 69 66 IAV (A) at TJ = 25 °C 1 63 IAV (A) at TJ = 150 °C 0.1 0.0001 0.001 0.01 0.1 T in - (s) Single Pulse Avalanche Current Capability vs. Time www.vishay.com 4 1 60 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Drain-Source Breakdown Voltage vs. Junction Temperature Document Number: 68633 S-80897-Rev. A, 21-Apr-08 New Product SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 0.8 50 ID - Drain Current (A) V GS(th) Variance (V) 0.5 ID = 250 µA ID = 1 mA 0.2 40 30 20 - 0.1 10 - 0.4 - 50 0 - 25 0 25 50 75 100 125 0 150 25 TJ - Temperature(°C) 50 100 125 150 TC - Case Temperature (°C) Threshold Voltage Max. Drain Current vs. Case Temperature 140 1000 Limited by RDS(on)* 120 10 µs 100 I D - Drain Current (A) 100 Power (W) 75 80 60 40 100 µs 10 1 ms 10 ms 100 ms, DC 1 20 BVDSS Limited TC = 25 °C Single Pulse 0 0 25 50 75 100 125 0.1 0.1 150 TJ - Temperature (°C) Power Derating, Junction-to-Case 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68633. Document Number: 68633 S-80897-Rev. A, 21-Apr-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1