Features • • • • • • • • • • • • • Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for Grounded Laser Diodes Output Current per Channel up to 200 mA Total Output Current up to 250 mA Rise Time 1.0 ns/Fall Time 1.1 ns On-chip RF Oscillator Control of 2 Different Frequencies and Swings by Use of 4 External Resistors Oscillator Frequency Range from 200 MHz to 600 MHz Oscillator Swing to 100 mA Single 5-V Power Supply Common Enable/Disable Input TTL/CMOS Control Signals Small SSO24 Package and QFN28 Package 5-Channel Laser Driver with RF Oscillator and 2 Outputs Applications • Combo Drives (DVD + CD-RW) • DVD-RAM with CD-RW Capability • DVD-RW with CD-RW Capability T0800 1. Description The T0800 is a laser diode driver for the operation of two different, grounded laser diodes for DVD-RAM (650 nm) and CD-RW (780 nm). It includes five channels for five different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level. The channels 2 to 5 are provided as write channels with very fast switching speeds. When a low signal is applied to the NE pins, write current pulses are enabled. All channels are summed together and switched to one of the two outputs IOUTA or IOUTB by the select input SELA. Each channel can contribute up to 200 mA to the total output current of up to 250 mA. A total gain of 100 is provided between each reference current input and the selected output. Although the reference inputs are current inputs, voltage control is possible by using external resistors. An on-chip RF oscillator reduces laser mode hopping noise during read mode. Frequency and swing can be set independently for the two selectable outputs with two pairs of resistors. Oscillation is enabled by a high signal at the ENOSC pin. Complete output current and oscillator switch-off is achieved by a low signal at the ENABLE input. Rev. 4503D–DVD–02/05 2. Pin Configuration Figure 2-1. Pinning SSO24 IR I2 I3 I4 I5 RFA RFB NE2 NE3 NE4 NE5 ENABLE Table 2-1. 2 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC1 VCC2 IOUTA IOUTA GND RSA RSB IOUTB IOUTB SELA ENOSC VCC2 Pin Description: SSO24 Pin Symbol Type Function 1 IR Analog Input current, bias voltage approximately GND 2 I2 Analog Input current, bias voltage approximately GND 3 I3 Analog Input current, bias voltage approximately GND 4 I4 Analog Input current, bias voltage approximately GND 5 I5 Analog Input current, bias voltage approximately GND 6 RFA Analog External resistor to GND sets frequency of oscillator A 7 RFB Analog External resistor to GND sets frequency of oscillator B 8 NE2 Digital Digital control of channel 2 (low active) 9 NE3 Digital Digital control of channel 3 (low active) 10 NE4 Digital Digital control of channel 4 (low active) 11 NE5 Digital Digital control of channel 5 (low active) 12 ENABLE Digital Enables output current (high active) 13 VCC2 Supply +5 V power supply for IOUT 14 ENOSC Digital Enables RF oscillator (high active) 15 SELA Digital High: selects IOUTA, RFA, RSA Low: selects IOUTB, RFB, RSB 16/17 IOUTB Analog Output current source B for laser diode 18 RSB Analog External resistor to GND sets swing of oscillator B 19 RSA Analog External resistor to GND sets swing of oscillator A 20 GND Supply Ground 21/22 IOUTA Analog Output current source A for laser diode 23 VCC2 Supply +5 V power supply for IOUT 24 VCC1 Supply +5 V power supply for circuit T0800 4503D–DVD–02/05 T0800 Pinning QFN28 I3 I2 IR NC VCC1 VCC2 VCC2 Figure 2-2. 1 2 3 4 5 6 7 28 27 26 25 24 23 22 21 20 19 18 17 16 15 8 9 10 11 12 13 14 IOUTA IOUTA GND RSA RSB IOUTB IOUTB NE4 NE5 ENABLE VCC2 VCC2 ENOSC SELA I4 I5 RFA RFB GND NE2 NE3 Table 2-2. Pin Description: QFN28 Pin Symbol Type Function 1 I4 Analog Input current, bias voltage approximately GND 2 I5 Analog Input current, bias voltage approximately GND 3 RFA Analog External resistor to GND sets frequency of oscillator A 4 RFB Analog External resistor to GND sets frequency of oscillator B 5 GND Supply Ground 6 NE2 Digital Digital control of channel 2 (low active) 7 NE3 Digital Digital control of channel 3 (low active) 8 NE4 Digital Digital control of channel 4 (low active) 9 NE5 Digital Digital control of channel 5 (low active) 10 ENABLE Digital Enables output current (high active) 11, 12 VCC2 Supply +5 V power supply IOUT 13 ENOSC Digital Enables RF oscillator (high active) 14 SELA Digital High: selects IOUTA, RFA, RSA Low: selects IOUTB, RFB, RSB 15 IOUTB Analog Output current source B for laser diode 16 IOUTB Analog Output current source B for laser diode 17 RSB Analog External resistor to GND sets swing of oscillator B 18 RSA Analog External resistor to GND sets swing of oscillator A 19 GND Supply Ground 20 IOUTA Analog Output current source A for laser diode 21 IOUTA Analog Output current source A for laser diode 22, 23 VCC2 Supply +5 V power supply IOUT 24 VCC1 Supply +5 V power supply circuit 25 NC – 26 IR Analog Input current, bias voltage approximately GND 27 I2 Analog Input current, bias voltage approximately GND 28 I3 Analog Input current, bias voltage approximately GND Paddle – – Not connected Should be connected with ground 3 4503D–DVD–02/05 Figure 2-3. Block Diagram I5 NE5 Channel 5 I4 NE4 Channel 4 I3 NE3 Channel 3 I2 NE2 Channel 2 IR IOUTA IOUTB Read channel ENABLE ENOSC RF oscillator RFA RFB RSA RSB 4 SELA T0800 4503D–DVD–02/05 T0800 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Value Unit Supply voltage VCC -0.5 to +6.0 V Input voltage at IR, I2, I3, I4, I5 VIN1 -0.5 to +0.5 V Input voltage at NE2, NE3, NE4, NE5, ENOSC VIN2 -0.5 to VCC +0.5 V Output voltage VOUT -0.5 to VCC -1 V 0.7 (1) (2) to 1 W Power dissipation Ptot Junction temperature TJ 150 °C Storage temperature range Notes: 1. RthJA ≤115 K/W, Tamb = 70°C Tstg -65 to +125 °C Symbol Value(1) Unit RthJA 115 (SSO24) 35 (QFN28) K/W K/W Symbol Value Unit 2. RthJA ≤115 K/W, Tamb = 25°C 4. Thermal Resistance Parameter Junction ambient Note: 1. Measured with multi-layer test board (JEDEC standard JESD51-7) 5. Recommended Operating Conditions Parameter VCC 4.5 to 5.5 V IIR, II2, II3, II4, II5 < 2.5 mA External resistor to GND to set oscillator frequency RFA, RFB >3 kΩ External resistor to GND to set oscillator swing RSA, RSB > 100 Ω Tamb 0 to +70 °C Supply voltage range Input current Operating temperature range 5 4503D–DVD–02/05 6. Electrical Characteristics VCC = 5 V, Tamb = 25°C, ENABLE = High, NE2 = NE3 = NE4 = NE5 = High, ENOSC = Low, unless otherwise specified No. 1 Parameters Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type* Power Supply 1.1 Supply current, power down ENABLE = Low, NE2 = NE3 = NE4 = NE5 = Low 11,12, 22, 23, 24 ICCPD2 0.5 mA A 1.2 Supply current, read mode, oscillator disabled IIR = II2 = II3 = II4 = II5 = 500 µA 11,12, 22, 23, 24 ICCR1 115 mA A 1.3 Supply current, read mode, oscillator enabled, output A selected IIR = II2 = II3 = II4 = II5 = 500 µA, ENOSC = High, RS = 560 Ω, RF = 7.5 kΩ, SELA = High 11,12, 22, 23, 24 ICCR2 120 mA A 1.4 Supply current, write mode IIR = II2 = II3 = II4 = II5 = 500 µA, NE2 = NE3 = NE4 = NE5 = Low 11,12, 22, 23, 24 ICCW 320 mA A 1.5 Supply current, input off IIR = II2 = II3 = II4 = II5 = 0 µA 11,12, 22, 23, 24 ICCoff 18 mA A V A V A V A V A V A V A V A 2 Digital Inputs 2.1 NE2/NE3/NE4/NE5 low voltage 6, 7, 8, 9 VNELO 2.2 NE2/NE3/NE4/NE5 high voltage 6, 7, 8, 9 VNEHI 2.3 SELA low voltage 14 VSELALO 2.4 SELA high voltage 14 VSELAHI 2.5 ENABLE low voltage 10 VENLO 2.6 ENABLE high voltage 10 VENHI 2.7 ENOSC low voltage 13 VEOLO 2.8 ENOSC high voltage 13 VEOHI 2.0 V A -300 µA A µA A µA A µA A µA A 3 1.1 2.0 0.5 2.0 0.5 2.0 0.5 Currents at Digital Inputs 3.1 NE2/NE3/NE4/NE5 low current NE = 0 V 6, 7, 8, 9 INELO 3.2 NE2/NE3/NE4/NE5 high current NE = 5 V 6, 7, 8, 9 INEHI 3.3 SELA low current SELA = 0 V 14 ISELALO 3.4 SELA high current SELA = 5 V 14 ISELAHI 3.5 ENABLE low current ENABLE = 0 V 10 IENLO 3.6 ENABLE high current ENABLE = 5 V 10 IENHI 3.7 ENOSC low current ENOSC = 0 V 13 IEOLO 3.8 ENOSC high current ENOSC = 5 V 13 IEOHI 800 -45 150 -150 100 -100 800 µA A µA A µA A *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 6 1. Related to QFN28 Package T0800 4503D–DVD–02/05 T0800 7. Electrical Characteristics: Laser Amplifier VCC = 5 V, Tamb = 25°C, ENABLE = High, unless otherwise specified No. 4 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 100 130 mA/mA A Outputs IOUTA and IOUTB 4.1 Best fit current gain Any channel(1) 15, 16, 20, 21 GAIN 90 4.2 Best fit current offset Any channel(1) 15, 16, 20, 21 IOS -8 +4 mA A 4.3 Output current linearity Any channel(1) 15, 16, 20, 21 ILIN -3 +3 % A 4.5 Output current per channel Output is sourcing 15, 16, 20, 21 IOUTR 200 mA A 4.6 Total output current 15, 16, 20, 21 IOUT 250 mA A 4.7 IIN input impedance RIN is to GND 1, 2, 26, 27, 28 RIN 170 Ω A 4.8 NE threshold Temperature stabilized 6, 7, 8, 9 VTH V C 4.9 Output off current 1 ENABLE = Low 15, 16, 20, 21 IOFF1 1 mA A 4.10 Output off current 2 NE2 = NE3 = NE4 = NE5 = High 15, 16, 20, 21 IOFF2 1 mA A 4.11 Output off current 3 NE2 = NE3 = NE4 = NE5 = Low, IIR = II2 = II3 = II4 = II5 = 0 µA 15, 16, 20, 21 IOFF3 5 mA A 4.12 IOUT supply sensitivity, read mode IOUT = 40 mA, VCC = 5 V ±10%, read-only 15, 16, 20, 21 VSER -5 1 %V A 4.13 IOUT supply sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA write, VCC = 5 V ±10% 15, 16, 20, 21 VSEW -6 0 %V A 4.14 IOUT current output noise IOUT = 40 mA, ENOSC = Low 15, 16, 20, 21 INOO 3 nA/ rt-Hz C 4.15 IOUT temperature sensitivity, read mode IOUT = 40 mA, read only 15, 16, 20, 21 TSER -100 ppm/°C C 4.16 IOUT temperature sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA write 15, 16, 20, 21 TSEW -300 ppm/°C C 220 270 1.68 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Linearity of the amplifier is calculated using a best fit method at three operating points of IOUT at 20 mA, 40 mA, and 60 mA, IOUT = (IIN × GAIN) + IOS 7 4503D–DVD–02/05 8. Electrical Characteristics VCC = 5 V, IOUT = 40 mA DC with 40-mA pulse, Tamb = 25°C, unless otherwise specified No. 5 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Outputs IOUTA and IOUTB, AC Performance 5.1 Write rise time IOUT = 40 mA (read) +40 mA (10%-90%)(1) 15, 16, 20, 21 tRISE 1.0 3.0 ns C 5.2 Write fall time IOUT = 40 mA (read) +40 mA (10%-90%)(1) 15, 16, 20, 21 tFALL 1.1 3.0 ns C 5.3 Output current overshoot IOUT = 40 mA (read) + 40 mA(1) 15, 16, 20, 21 OS 5 % C 5.4 IOUT ON prop delay NE 50% High-Low to IOUT at 50% of final value 15, 16, 20, 21 tON 2.0 ns C 5.5 IOFF OFF prop delay NE 50% Low-High to IOUT at 50% of final value 15, 16, 20, 21 tOFF 2.0 ns C 5.6 Disable time ENABLE 50% High-Low to IOUT at 50% of final value 15, 16, 20, 21 tDIS 20 ns C 5.7 Enable time ENABLE 50% Low-High to IOUT at 50% of final value 15, 16, 20, 21 tEN 20 ns C 5.8 Disable time oscillator ENOSC 50% Low-High to IOUT at 50% of final value 15, 16, 20, 21 TDISO 4 ns C 5.9 Enable time oscillator ENOSC 50% High-Low to IOUT at 50% of final value 15, 16, 20, 21 TENO 2 ns C 5.10 SELA delay SELA Low-High 50% to IOUT at 50% of final value 15, 16, 20, 21 TSAH TBD ns C 5.11 SELA delay SELA High-Low 50% to IOUT at 50% of final value 15, 16, 20, 21 TSAL TBD ns C 5.12 Amplifier bandwidth IOUT = 50 mA, all channels, -3 dB value 15, 16, 20, 21 BWLCA 20 MHz C 6 Oscillator 6.1 Oscillator frequency RF = 4.7 kΩ 15, 16, 20, 21 FOSC MHz A 6.2 Oscillator temperature coefficient RF = 4.7 kΩ 15, 16, 20, 21 TCOSC -150 ppm/°C C 6.3 Disable time oscillator ENOSC 50% High-Low to IOUT, at 10%/90% of final value 15, 16, 20, 21 TDISO 4 ns C 6.4 Enable time oscillator ENOSC 50% Low-High to IOUT, at 10%/90% of final value 15, 16, 20, 21 TENO 2 ns C 380 470 560 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 8 T0800 4503D–DVD–02/05 T0800 9. Application Information Oscillator Figure 9-1. Frequency versus Resistor RFA and RFB (RS = 525 Ω) 550 Frequency (MHz) 500 450 400 350 300 250 200 4.0 5.0 6.0 7.0 8.0 9.0 10.0 RFA, RFB (kΩ) Figure 9-2. Swing versus Resistor RSA and RSB (RF = 7.82 kΩ) 120 Swing (mA pk/pk) 100 80 60 40 20 0 0.0 200.0 400.0 600.0 800.0 1000.0 1200.0 450.0 500.0 RSA, RSB (Ω) Figure 9-3. Frequency Dependency of Swing 60 Swing (mA pk/pk) 50 40 30 20 10 0 200.0 250.0 300.0 350.0 400.0 Frequency (MHz) 9 4503D–DVD–02/05 Figure 9-4. Transfer Characteristic of all Channels (Gain = 111) 350 IOUT (mA) 300 250 200 150 100 50 0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0 IR/I2/I3/I4/I5 (mA) Figure 9-5. Output Characteristic (Voltage Compliance) R(IOUT) = 5.8 Ω 350 300 IOUT (mA) 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 5.0 VCC - V(IOUT)/V Figure 9-6. 10 Output Pulse, Read: 50 mA, Write: 250 mA pk-pk T0800 4503D–DVD–02/05 T0800 Figure 9-7. Timing Diagram of IOUT ENABLE NE2 NE3 NE4 NE5 tON tOFF tOFF tON tOFF tON IOUT tON tOFF tf tr tEN tDIS tf tr tf tr tf tr Figure 9-8. Application Circuit A n a l o g D i g i t a l VCC IR I2 I3 I4 I5 RFA RFB NE2 NE3 NE4 NE5 ENABLE 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC1 VCC2 IOUTA IOUTA GND RSA RSB IOUTB IOUTB SELA ENOSC VCC2 LD LD VCC 11 4503D–DVD–02/05 10. Ordering Information Extended Type Number Package Remarks T0800-TNQ SSO24 Taped and reeled T0800-PJQ QFN28 Taped and reeled 11. Package Information 5.7 5.3 Package SSO24 Dimensions in mm 8.05 7.80 4.5 4.3 1.30 0.15 0.15 0.05 0.25 6.6 6.3 0.65 7.15 24 13 technical drawings according to DIN specifications 1 12 12 T0800 4503D–DVD–02/05 T0800 13 4503D–DVD–02/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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