MICROCHIP TC1054

TC1054/TC1055/TC1186
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output
Features
General Description
• Low Ground Current for Longer Battery Life
• Low Dropout Voltage
• Choice of 50 mA (TC1054), 100 mA (TC1055)
and 150 mA (TC1186) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low-Battery
Detector or Microcontroller-Reset Generator
• Overcurrent and Overtemperature Protection
• 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
The TC1054, TC1055 and TC1186 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators. Designed specifically for
battery-operated systems, the devices’ CMOS
construction minimizes ground current, extending
battery life. Total supply current is typically 50 µA at full
load (20 to 60 times lower than in bipolar regulators).
Applications
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
The TC1054, TC1055 and TC1186 are stable with an
output capacitor of only 1 µF, and have a maximum
output current of 50 mA, 100 mA and 150 mA,
respectively. For higher output current regulators,
please refer to the TC1173 (IOUT = 300 mA) data sheet
(DS21632).
Typical Application
VIN
1
2
3
Package Type
VOUT 5
VIN
TC1054
TC1055
TC1186
GND
SHDN
The devices’ key features include low noise operation,
low dropout voltage – typically 85 mV (TC1054),
180 mV (TC1055) and 270 mV (TC1186) at full load —
and fast response to step changes in load. An error
output (ERROR) is asserted when the devices are
out-of-regulation (due to a low input voltage or
excessive output current). ERROR can be used as a
low battery warning or as a processor RESET signal
(with the addition of an external RC network). Supply
current is reduced to 0.5 µA (maximum), with both
VOUT and ERROR disabled when the shutdown input is
low. The devices incorporate both overtemperature
and over-current protection.
VOUT
+
1 µF
5-Pin SOT-23
VOUT
ERROR
5
TC1054
TC1055
TC1186
1 M
ERROR
4
4
ERROR
1
2
3
VIN
GND
SHDN
Note: 5-Pin SOT-23 is equivalent to the EIAJ (SC-74A)
Shutdown Control
(from Power Control Logic)
 2002-2012 Microchip Technology Inc.
DS21350E-page 1
TC1054/TC1055/TC1186
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ..................................................................6.75V
Output Voltage ..................................... (-0.3V) to (VIN + 0.3V)
Power Dissipation ......................... Internally Limited (Note 6)
Maximum Voltage on Any Pin ...................VIN +0.3V to -0.3V
Operating Junction Temperature Range .. -40°C <TJ< +125°C
Storage Temperature.....................................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output Current
Output Voltage
Sym
Min
Typ
Max
VIN
2.7
—
6.50
V
Note 8
IOUTMAX
50
—
—
mA
TC1054
100
—
—
TC1055
150
—
—
TC1186
VOUT
VOUT Temperature
Coefficient
TCVOUT
VR – 2.5% VR ±0.5% VR + 2.5%
—
20
—
Units
V
Conditions
Note 1
ppm/°C Note 2
—
40
—
VOUT/VIN
—
0.05
0.35
%
(VR + 1V) VIN6V
TC1054; TC1055 VOUT/VOUT
—
0.5
2
%
—
0.5
3
(Note 3)
IL = 0.1 mA to IOUTMAX
Line Regulation
Load Regulation
TC1186
Note 1:
2:
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V,
4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x T
3:
4:
5:
6:
7:
8:
9:
Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX
at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0
“Thermal Considerations” for more details.
Hysteresis voltage is referenced by VR.
The minimum VIN has to justify the conditions: VIN  VR + VDROPOUT and VIN  2.7V for IL = 0.1 mA to
IOUTMAX.
Apply for junction temperatures of -40°C to +85°C.
DS21350E-page 2
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Dropout Voltage
Sym
Min
Typ
Max
Units
VIN – VOUT
—
2
—
mV
—
65
—
TC1055; TC1186
Conditions
IL = 100 µA
IL = 20 mA
—
85
120
IL = 50 m
—
180
250
IL = 100 mA
—
270
400
IIN
—
50
80
µA
SHDN = VIH,
IL = 0 µA (Note 9)
IINSD
—
0.05
0.5
µA
SHDN = 0V
Power Supply Rejection Ratio
PSRR
—
64
—
dB
f 1 kHz
Output Short Circuit Current
IOUTSC
—
300
450
mA
VOUT = 0V
Thermal Regulation
VOUT/PD
—
0.04
—
V/W
Notes 5, 6
Thermal Shutdown
Die Temperature
TSD
—
160
—
°C
TC1186
Supply Current
Shutdown Supply Current
IL = 150 mA (Note 4)
TSD
—
10
—
eN
—
260
—
SHDN Input High Threshold
VIH
45
—
—
%VIN
VIN = 2.5V to 6.5V
SHDN Input Low Threshold
VIL
—
—
15
%VIN
VIN = 2.5V to 6.5V
VINMIN
1.0
—
—
V
VOL
—
—
400
mV
Thermal Shutdown Hysteresis
Output Noise
°C
nV/Hz IL = IOUTMAX
SHDN Input
ERROR Output
Minimum VIN Operating Voltage
Output Logic Low Voltage
1 mA Flows to ERROR
ERROR Threshold Voltage
VTH
—
0.95 x VR
—
V
ERROR Positive Hysteresis
VHYS
—
50
—
mV
Note 7
VOUT to ERROR Delay
tDELAY
—
2.5
—
ms
VOUT falling from
VR to VR – 10%
Note 1:
2:
See Figure 4-2
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V,
4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x T
3:
4:
5:
6:
7:
8:
9:
Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output
voltage due to heating effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX
at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0
“Thermal Considerations” for more details.
Hysteresis voltage is referenced by VR.
The minimum VIN has to justify the conditions: VIN  VR + VDROPOUT and VIN  2.7V for IL = 0.1 mA to
IOUTMAX.
Apply for junction temperatures of -40°C to +85°C.
 2002-2012 Microchip Technology Inc.
DS21350E-page 3
TC1054/TC1055/TC1186
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
0.100
0.020
ILOAD = 10 mA
0.090
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
CIN = 1 μF
COUT = 1 μF
0.002
0.060
0.050
0.040
0.030
0.020
CIN = 1 μF
COUT = 1 μF
0.000
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
-40
ILOAD = 100 mA
DROPOUT VOLTAGE (V)
0.140
0.120
0.100
0.080
0.060
0.020
CIN = 1 μF
COUT = 1 μF
125
0.250
0.200
0.150
0.100
0.050
CIN = 1 μF
COUT = 1 μF
0.000
0.000
-40
-20
0
20
50
70
125
-40
-20
TEMPERATURE (°C)
FIGURE 2-2:
Dropout Voltage vs.
Temperature (ILOAD = 100 mA).
0
20
50
TEMPERATURE (°C)
70
125
FIGURE 2-5:
Dropout Voltage vs.
Temperature (ILOAD = 150 mA).
90
90
ILOAD = 10 mA
80
70
60
50
40
30
20
CIN = 1 μF
COUT = 1 μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
FIGURE 2-3:
(ILOAD = 10 mA).
DS21350E-page 4
Ground Current vs. VIN
ILOAD = 100 mA
80
GND CURRENT (μA)
GND CURRENT (μA)
70
ILOAD = 150 mA
0.160
0.040
0
20
50
TEMPERATURE (°C)
0.300
0.200
0.180
-20
FIGURE 2-4:
Dropout Voltage vs.
Temperature (ILOAD = 50 mA).
FIGURE 2-1:
Dropout Voltage vs.
Temperature (ILOAD = 10 mA).
DROPOUT VOLTAGE (V)
0.070
0.010
0.000
ILOAD = 50 mA
0.080
70
60
50
40
30
20
CIN = 1 μF
COUT = 1 μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
FIGURE 2-6:
(ILOAD = 100 mA).
Ground Current vs. VIN
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
80
3.5
70
3
60
2.5
50
VOUT (V)
GND CURRENT (μA)
ILOAD = 0
ILOAD = 150 mA
40
30
2
1.5
1
20
CIN = 1 μF
COUT = 1 μF
10
0.5
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
FIGURE 2-7:
(ILOAD = 150 mA).
Ground Current vs. VIN
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
VIN (V)
FIGURE 2-10:
(ILOAD = 0 mA).
3.5
3.0
CIN = 1 μF
COUT = 1 μF
0
VOUT vs. VIN
3.320
ILOAD = 100 mA
ILOAD = 10 mA
3.315
3.310
3.305
VOUT (V)
VOUT (V)
2.5
2.0
1.5
3.300
3.295
3.290
1.0
CIN = 1 μF
COUT = 1 μF
VIN = 4.3V
3.285
0.5
CIN = 1 μF
COUT = 1 μF
0.0
0
3.280
3.275
-40
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
FIGURE 2-8:
(ILOAD = 100 mA).
VOUT vs. VIN
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
FIGURE 2-11:
Output Voltage (3.3V) vs.
Temperature (ILOAD = 10 mA).
3.290
3.288
5.025
ILOAD = 150 mA
5.020
3.284
3.282
3.280
3.278
3.276
ILOAD = 10 mA
5.015
VOUT (V)
VOUT (V)
3.286
5.010
5.005
5.000
4.995
CIN = 1 μF
COUT = 1 μF
VIN = 4.3V
4.990
4.985
3.274
VIN = 6V
CIN = 1 μF
COUT = 1 μF
-40
-40
-20
-10
0
20
40
85
125
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 2-9:
(ILOAD = 150 mA).
VOUT vs. VIN
 2002-2012 Microchip Technology Inc.
FIGURE 2-12:
Output Voltage (5V) vs.
Temperature (ILOAD = 10 mA).
DS21350E-page 5
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
10.0
RLOAD = 50 Ω
COUT = 1 μF
CIN = 1 μF
4.994
4.992
ILOAD = 150 mA
NOISE (μV/√Hz)
VOUT (V)
4.990
4.988
4.986
4.984
4.982
4.980
4.978
4.976
VIN = 6V
CIN = 1 μF
COUT = 1 μF
1.0
0.1
4.974
-40
-20
-10
0
20
40
85
125
0.0
0.01K 0.1K
TEMPERATURE (°C)
FIGURE 2-13:
Output Voltage (5V) vs.
Temperature (ILOAD = 10 mA).
FIGURE 2-16:
1K
10K 100K 1000K
FREQUENCY (Hz)
Output Noise vs. Frequency.
1000
COUT = 1 μF
to 10 μF
70
ILOAD = 10 mA
100
50
COUT ESR (Ω)
GND CURRENT (μA)
60
40
30
20
10
VIN = 6V
CIN = 1 μF
COUT = 1 μF
-20
Stable Region
1
0.1
0
-40
10
-10
0
20
40
TEMPERATURE (°C)
85
0.01
125
FIGURE 2-14:
GND Current vs.
Temperature (ILOAD = 10 mA).
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
FIGURE 2-17:
Current.
Stability Region vs. Load
80
GND CURRENT (μA)
70
ILOAD = 150 mA
VSHDN
60
50
40
30
20
10
VIN = 6V
CIN = 1 μF
COUT = 1 μF
VOUT
0
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
FIGURE 2-15:
GND Current vs.
Temperature (ILOAD = 150 mA).
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 4.3V, Temperature = +25°C,
Fall Time = 184 µs
FIGURE 2-18:
LDO.
DS21350E-page 6
Measure Rise Time of 3.3V
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.
VSHDN
VSHDN
VOUT
VOUT
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 6V, Temperature = +25°C,
Fall Time = 192 µs
FIGURE 2-19:
LDO.
Measure Rise Time of 5.0V
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 4.3V, Temperature = +25°C,
Fall Time = 52 µs
FIGURE 2-21:
LDO.
Measure Fall Time of 3.3V
VSHDN
VOUT
VOUT
Conditions: VIN = 6V, CIN = 0 µF, COUT = 1 µF
ILOAD was increased until temperature of die
reached about +160°C, at which time integrated thermal protection circuitry shuts the regulator off when
die temperature exceeds approximately +160°C.
The regulator remains off until die temperature drops
to approximately +150°C.
Conditions: CIN = 1 µF, COUT = 1 µF,
ILOAD = 100 mA, VIN = 6V, Temperature = +25°C,
Fall Time = 88 µs
FIGURE 2-22:
LDO.
Measure Fall Time of 5.0V
FIGURE 2-20:
Thermal Shutdown
Response of 5.0V LDO.
 2002-2012 Microchip Technology Inc.
DS21350E-page 7
TC1054/TC1055/TC1186
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin No.
SOT-23
3.1
PIN FUNCTION TABLE
Symbol
1
VIN
2
GND
3
SHDN
4
ERROR
5
VOUT
Description
Unregulated supply input
Ground terminal
Shutdown control input
Out-of-Regulation Flag (Open-drain output)
Regulated voltage output
Unregulated Supply Input (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
3.3
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to SHDN. During shutdown,
output voltage falls to zero, ERROR is open-circuited
and supply current is reduced to 0.5 µA (maximum).
3.4
3.2
Ground Terminal (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor COUT to GND.
DS21350E-page 8
Shutdown Control Input (SHDN)
Out Of Regulation Flag (ERROR)
ERROR goes low when VOUT is out-of-tolerance by
approximately -5%.
3.5
Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
4.0
DETAILED DESCRIPTION
The TC1054, TC1055 and TC1186 are precision fixed
output voltage regulators (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet (DS21353)). Unlike bipolar regulators, the
TC1054, TC1055 and TC1186 supply current does not
increase with load current.
Figure 4-1 shows a typical application circuit, where the
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in Shutdown, supply current decreases to 0.05 µA
(typical), VOUT falls to zero volts, and ERROR is opencircuited.
+
+
1 µF
Battery
VIN
VOUT
TC1054
TC1055
TC1186
+
VOUT
1 µF
C1
4.1
ERROR is driven low whenever VOUT falls out of
regulation by more than -5% (typical). This condition
may be caused by low input voltage, output current
limiting or thermal limiting. The ERROR threshold is 5%
below rated VOUT, regardless of the programmed
output voltage value (e.g. ERROR = VOL at 4.75V
(typical) for a 5.0V regulator and 2.85V (typical) for a
3.0V regulator). ERROR output operation is shown in
Figure 4-2.
Note that ERROR is active when VOUT falls to VTH and
inactive when VOUT rises above VTH by VHYS.
As shown in Figure 4-1, ERROR can be used either as
a battery low flag or as a processor RESET signal (with
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
VOUT
GND
SHDN
HYSTERESIS (VH)
VTH
ERROR
Shutdown
Control (to
CMOS Logic or
Tie to VIN if
unused)
C2 Required Only if
ERROR is used as a
Processor RESET
Signal (see Text)
FIGURE 4-1:
ERROR Open-Drain Output
V+
R1
1 MΩ
BATTLOW
or RESET
0.2 µF
C2
Typical Application Circuit.
 2002-2012 Microchip Technology Inc.
tDELAY
ERROR
VIH
VOL
FIGURE 4-2:
4.2
Error Output Operation.
Output Capacitor
A 1 µF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1 and less
than 10.0, with a resonant frequency above 1 MHz. A
1 µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used (since many
aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for
applications operating below -25°C). When operating
from sources other than batteries, supply-noise
rejection and transient response can be improved by
increasing the value of the input and output capacitors
and employing passive filtering techniques.
DS21350E-page 9
TC1054/TC1055/TC1186
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds +160°C.
The regulator remains off until the die temperature
drops to approximately +150°C.
5.2
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input voltage, output voltage and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits.
For example:
Given:
VINMAX
= 3.0V +5%
VOUTMIN
= 2.7V – 2.5%
ILOADMAX
= 40 mA
TJMAX
= +125°C
TAMAX
= +55°C
Find:
PD   V INMAX – VOUTMIN ILOADMAX
=   3.0  1.05  –  2.7  0.975  40  10
Where:
PD = Worst-case actual power dissipation
VOUTmin = Minimum regulator output voltage
EQUATION 5-2:
 T JMAX – T AMAX 
P DMAX = ------------------------------------------- JA
Where all terms are previously defined.
DS21350E-page 10
-3
= 20.7mW
Maximum allowable power dissipation:
 T JMAX – T AMAX 
PDMAX = --------------------------------------------
ILOADmax = Maximum output (load) current
The
maximum
allowable
power
dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (JA). The 5-Pin SOT-23 package has a
JA of approximately 220°C/Watt.
Actual power dissipation
Maximum allowable dissipation
Actual power dissipation:
PD   V INMAX – VOUTMIN ILOADMAX
VINmax = Maximum voltage on VIN
1.
2.
JA
 125 – 55 
= ------------------------220
= 318mW
In this example, the TC1054 dissipates a maximum of
20.7 mW; below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
5.3
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Layouts having a ground
plane, wide traces at the pads and wide power supply
bus lines, combine to lower θJA and increase the maximum allowable power dissipation limit.
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SOT-23
Example
XXNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
CY25
(V)
TC1054
Code
TC1055
Code
TC1186
Code
1.8
CYNN
DYNN
PYNN
2.5
C1NN
D1NN
P1NN
2.6
CTNN
DTNN
PVNN
2.7
C2NN
D2NN
P2NN
2.8
CZNN
DZNN
PZNN
2.85
C8NN
D8NN
P8NN
3.0
C3NN
D3NN
P3NN
3.3
C4NN
D4NN
P5NN
3.6
C9NN
D9NN
P9NN
4.0
C0NN
D0NN
P0NN
5.0
C6NN
D6NN
P7NN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2002-2012 Microchip Technology Inc.
DS21350E-page 11
TC1054/TC1055/TC1186
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±
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$
±
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±
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±
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±
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DS21350E-page 12
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
5-Lead Plastic Small Outline Transistor (CT) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2002-2012 Microchip Technology Inc.
DS21350E-page 13
TC1054/TC1055/TC1186
NOTES:
DS21350E-page 14
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
APPENDIX A:
REVISION HISTORY
Revision E (December 2012)
The following is the list of modifications:
1.
2.
3.
Updated the Input Voltage value in Absolute
Maximum Ratings † section.
Updated Section 6.0, Packaging Information.
Updated Product Identification System.
Revision D (February 2007)
• Corrected standard output voltages on page 1
and in Section , Product Identification System.
• Added TDELAY parameter in DC Characteristics
table in Section 1.0, Electrical Characteristics.
• Changes to Figure 4-2.
• Section 6.0, Packaging Information: Corrected
SOT-23 Packaging Information.
Revision C (March 2003)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
 2002-2012 Microchip Technology Inc.
DS21350E-page 15
TC1054/TC1055/TC1186
NOTES:
DS21350E-page 16
 2002-2012 Microchip Technology Inc.
TC1054/TC1055/TC1186
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X.X
Device
Output
Voltage
X
XXXXX
Examples:
a) TC1054-1.8VCT713:
Temperature
Range
Package
b) TC1054-2.5VCT713:
c) TC1054-2.6VCT713:
Device:
Output Voltage *:
TC1054: 50 mA LDO with Shutdown and ERROR output
TC1055: 100 mA LDO with Shutdown and ERROR output
TC1186: 150 mA LDO with Shutdown and ERROR output
1.8 =
1.8V “Standard”
2.5 =
2.5V “Standard”
2.6 =
2.6V “Standard”
2.7 =
2.7V “Standard”
2.8 =
2.8V “Standard”
2.85 =
2.85V “Standard”
3.0 =
3.0V “Standard”
3.3 =
3.3V “Standard”
3.6 =
3.6V “Standard”
4.0 =
4.0V “Standard”
5.0 =
5.0V “Standard”
*Contact factory for other output voltage options.
d) TC1054-2.7VCT713:
e) TC1054-2.8VCT713:
f) TC1054-2.85VCT713:
g) TC1054-3.0VCT713:
h) TC1054-3.3VCT713:
i) TC1054-3.6VCT713:
j) TC1054-4.0VCT713:
k) TC1054-5.0VCT713:
a) TC1055-1.8VCT713:
Temperature Range:
V
= -40°C to +125°C (Various)
Package:
CT713 = Plastic Small Outline Transistor (SOT-23),
Tape and Reel
b) TC1055-2.5VCT713:
c) TC1055-2.6VCT713:
d) TC1055-2.7VCT713:
e) TC1055-2.8VCT713:
f) TC1055-2.85VCT713:
g) TC1055-3.0VCT713:
h) TC1055-3.3VCT713:
i) TC1055-3.6VCT713:
j) TC1055-4.0VCT713:
k) TC1055-5.0VCT713:
1.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.5V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.7V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.85V LDO Regulator, Various
Temp., 5LD SOT-23 Package
3.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
3.3V LDO Regulator, Various
Temp., 5LD SOT-23 Package
3.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
4.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
5.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
1.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.5V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.7V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
2.85V LDO Regulator, Various
Temp., 5LD SOT-23 Package
3.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
3.3V LDO Regulator, Various
Temp., 5LD SOT-23 Package
3.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
4.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
5.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
a) TC1186-1.8VCT713:
1.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
b) TC1186-2.5VCT713:
2.5V LDO Regulator, Various
Temp., 5LD SOT-23 Package
c) TC1186-2.6VCT713:
2.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
d) TC1186-2.7VCT713:
2.7V LDO Regulator, Various
Temp., 5LD SOT-23 Package
e) TC1186-2.8VCT713:
2.8V LDO Regulator, Various
Temp., 5LD SOT-23 Package
f) TC1186-2.85VCT713: 2.85V LDO Regulator, Various
Temp., 5LD SOT-23 Package
g) TC1186-3.0VCT713:
3.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
h) TC1186-3.3VCT713:
3.3V LDO Regulator, Various
Temp., 5LD SOT-23 Package
i) TC1186-3.6VCT713:
3.6V LDO Regulator, Various
Temp., 5LD SOT-23 Package
j) TC1186-4.0VCT713:
4.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
k) TC1186-5.0VCT713:
5.0V LDO Regulator, Various
Temp., 5LD SOT-23 Package
 2002-2012 Microchip Technology Inc.
DS21350E-page 17
TC1054/TC1055/TC1186
NOTES:
DS21350E-page 18
 2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62076-721-4
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2002-2012 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21350E-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
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Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
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Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
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Tel: 45-4450-2828
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Tel: 91-20-2566-1512
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Tel: 33-1-69-53-63-20
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Tel: 81-6-6152-7160
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Tel: 49-89-627-144-0
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Singapore
Tel: 65-6334-8870
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China - Shenyang
Tel: 86-24-2334-2829
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Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
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Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
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Thailand - Bangkok
Tel: 66-2-694-1351
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UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
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Tel: 86-592-2388138
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Tel: 86-756-3210040
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DS21350E-page 20
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
11/29/12
 2002-2012 Microchip Technology Inc.