MICROCHIP TC1224

TC1223/TC1224
50mA and 100mA CMOS LDOs with Shutdown
Features
General Description
• Extremely Low Ground Current for Longer Battery
Life
• Very Low Dropout Voltage
• Choice of 50mA and 100mA Output (TC1223,
TC1224, Respectively)
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power Saving Shutdown Mode
• Over Current and Over Temperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
The TC1223 and TC1224 are high accuracy (typically
±0.5%) CMOS upgrades for older (bipolar) low dropout
regulators such as the LP2980. Designed specifically
for battery-operated systems, the devices’ CMOS
construction eliminates wasted ground current,
significantly extending battery life. Total supply current
is typically 50µA at full load (20 to 60 times lower than
in bipolar regulators).
Applications
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
The devices’ key features include ultra low noise
operation; very low dropout voltage (typically 85mV,
TC1223 and 180mV, TC1224 at full load) and fast
response to step changes in load. Supply current is
reduced to 0.5µA (max) and VOUT falls to zero when
the shutdown input is low. The devices incorporate both
over temperature and over current protection.
The TC1223 and TC1224 are stable with an output
capacitor of only 1µF and have a maximum output
current of 50mA and 100mA respectively. For higher
output current versions, please see the TC1107,
TC1108 and TC1173 (IOUT = 300mA) data sheets.
Typical Application
Device Selection Table
VIN
Part Number
Package
Junction
Temp. Range
TC1223-xxVCT
5-Pin SOT-23A
-40°C to +125°C
TC1224-xxVCT
5-Pin SOT-23A
-40°C to +125°C
1
VIN
VOUT
5
+
TC1223
TC1224
2
VOUT
1µF
GND
NOTE: xx indicates output voltages
Available Output Voltages: 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6,
4.0, 5.0.
3
SHDN
NC
4
Other output voltages are available. Please contact Microchip
Technology Inc. for details.
Package Type
5-Pin SOT-23A
VOUT
NC
5
4
Shutdown Control
(from Power Control Logic)
TC1223
TC1224
1
2
3
VIN
GND
SHDN
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
 2002 Microchip Technology Inc.
DS21368B-page 1
TC1223/TC1224
1.0
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation.............................. Internally Limited
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature.......................... -65°C to +150°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1223/TC1224 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
—
6.0
V
Note 8
IOUTMAX
Maximum Output Current
50
100
—
—
—
—
mA
TC1223
TC1224
VOUT
Output Voltage
VR – 2.5%
VR ±0.5%
VR + 2.5%
V
Note 1
TCVOUT
VOUT Temperature Coefficient
—
—
20
40
—
—
ppm/°C
Note 2
∆VOUT/∆VIN
Line Regulation
—
0.05
0.35
%
(VR + 1V) ≤ VIN ≤ 6V
∆VOUT/VOUT
Load Regulation
—
0.5
2
%
IL = 0.1mA to IOUT MAX
(Note 3)
VIN-VOUT
Dropout Voltage
—
—
—
—
2
65
85
180
—
—
120
250
mV
IL = 100µA
IL = 20mA
IL = 50mA
IL = 100mA (Note 4)
IIN
Supply Current
—
50
80
µA
SHDN = VIH, IL = 0 (Note 7)
IINSD
Shutdown Supply Current
—
0.05
0.5
µA
SHDN = 0V
PSRR
Power Supply Rejection Ratio
—
64
—
dB
FRE ≤ 1kHz
TC1224
IOUTSC
Output Short Circuit Current
—
300
450
mA
VOUT = 0V
∆VOUT/∆PD
Thermal Regulation
—
0.04
—
V/W
Notes 5, 6
TSD
Thermal Shutdown Die Temperature
—
160
—
°C
∆TSD
Thermal Shutdown Hysteresis
—
10
—
°C
eN
Output Noise
—
260
—
nV/√Hz
VIH
SHDN Input High Threshold
45
—
—
%VIN
VIN = 2.5V to 6.5V
VIL
SHDN Input Low Threshold
—
—
15
%VIN
VIN = 2.5V to 6.5V
IL = IOUT MAX
SHDN Input
Note
1:
2:
3:
4:
5:
6:
7:
8:
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUT MAX – VOUT MIN) x 10 6
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θ JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to I OUT MAX.
DS21368B-page 2
 2002 Microchip Technology Inc.
TC1223/TC1224
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No.
(5-Pin SOT-23A)
PIN FUNCTION TABLE
Symbol
1
VIN
2
GND
3
SHDN
4
NC
5
VOUT
Description
Unregulated supply input.
Ground terminal.
Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.
The regulator enters shutdown when a logic low is applied to this input. During shutdown, output
voltage falls to zero and supply current is reduced to 0.5µA (max).
No connect.
Regulated voltage output.
 2002 Microchip Technology Inc.
DS21368B-page 3
TC1223/TC1224
3.0
DETAILED DESCRIPTION
3.1
The TC1223 and TC1224 are precision fixed output
voltage regulators. Unlike bipolar regulators, the
TC1223 and TC1224’s supply current does not
increase with load current. In addition, VOUT remains
stable and within regulation over the entire 0mA to
IOUTMAX operating load current range, (an important
consideration in RTC and CMOS RAM battery back-up
applications).
Figure 3-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be
connected directly to the input supply. While in
shutdown, supply current decreases to 0.05µA (typical)
and VOUT falls to zero volts.
FIGURE 3-1:
1µF
+
Battery
A 1µF (min) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1MHz. A
1µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for
applications operating below -25°C.) When operating
from sources other than batteries, supply-noise
rejection and transient response can be improved by
increasing the value of the input and output capacitors
and employing passive filtering techniques.
TYPICAL APPLICATION
CIRCUIT
VIN
+
Output Capacitor
VOUT
VOUT
+
TC1223
TC1224
1µF
GND
SHDN
NC
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
DS21368B-page 4
 2002 Microchip Technology Inc.
TC1223/TC1224
4.0
THERMAL CONSIDERATIONS
4.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
4.2
Equation 4-1 can be used in conjunction with Equation
4-2 to ensure regulator thermal operation is within
limits. For example:
Given:
VINMAX
ILOADMAX = 40mA
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
EQUATION 4-1:
PD ≈ (VINMAX – V OUTMIN)ILOADMAX
Where:
PD
VIN MAX
VOUT MIN
ILOAD MAX
= 3.0V ±10%
VOUTMIN = 2.7V – 2.5%
TJMAX
= 125°C
TAMAX
= 55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3
= 26.7mW
Maximum allowable power dissipation:
= Worst case actual power dissipation
= Maximum voltage on VIN
= Minimum regulator output voltage
= Maximum output (load) current
PDMAX = (TJMAX – TAMAX)
θJA
= (125 – 55)
220
= 318mW
The maximum allowable power dissipation (Equation
4-2) is a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) and the thermal resistance from junction-to-air
(θJA). The 5-Pin SOT-23A package has a θJA of
approximately 220°C/Watt.
In this example, the TC1223 dissipates a maximum of
26.7mW; below the allowable limit of 318mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits.
EQUATION 4-2:
4.3
PDMAX = (TJMAX – TAMAX)
θJA
Where all terms are previously defined.
 2002 Microchip Technology Inc.
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
DS21368B-page 5
TC1223/TC1224
5.0
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
DROPOUT VOLTAGE (V)
0.018
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 10mA
0.014
0.012
0.010
0.008
0.006
0.004
CIN = 1µF
COUT = 1µF
0.200
0
20
50
TEMPERATURE (°C)
70
0.060
0.050
0.040
0.030
0.020
0
20
50
TEMPERATURE (°C)
70
125
Ground Current vs. VIN (VOUT = 3.3V)
90
ILOAD = 100mA
ILOAD = 10mA
80
0.120
0.100
0.080
0.060
0.040
CIN = 1µF
COUT = 1µF
-40
-20
70
60
50
40
30
20
CIN = 1µF
COUT = 1µF
10
0
0.000
0
20
50
70
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
125
TEMPERATURE (°C)
Ground Current vs. VIN (VOUT = 3.3V)
VOUT vs. VIN (VOUT = 3.3V)
3.5
ILOAD = 0
ILOAD = 100mA
80
3
70
2.5
60
VOUT (V)
GND CURRENT (µA)
-20
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.140
90
CIN = 1µF
COUT = 1µF
-40
0.160
0.020
0.070
0.000
125
GND CURRENT (µA)
DROPOUT VOLTAGE (V)
0.180
-20
0.080
0.010
0.000
-40
ILOAD = 50mA
0.090
0.016
0.002
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.100
DROPOUT VOLTAGE (V)
Note:
50
40
30
2
1.5
1
20
CIN = 1µF
COUT = 1µF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
DS21368B-page 6
0.5
CIN = 1µF
COUT = 1µF
0
0
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
VIN (V)
 2002 Microchip Technology Inc.
TC1223/TC1224
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
VOUT vs. VIN (VOUT = 3.3V)
3.5
3.0
Output Voltage vs. Temperature (VOUT = 3.3V)
3.320
ILOAD = 100mA
ILOAD = 10mA
3.315
3.310
2.5
VOUT (V)
VOUT (V)
3.305
2.0
1.5
3.300
3.295
3.290
1.0
3.285
0.5
CIN = 1µF
COUT = 1µF
0.0
0
5.020
3.275
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
-40
70
ILOAD = 10mA
60
GND CURRENT (µA)
VOUT (V)
5.015
5.010
5.005
5.000
4.995
4.990
4.985
VIN = 6V
CIN = 1µF
COUT = 1µF
-40
-20
-10
0
20
40
85
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 5V)
5.025
CIN = 1µF
COUT = 1µF
VIN = 4.3V
3.280
125
Temperature vs. Quiescent Current (VOUT = 5V)
ILOAD = 10mA
50
40
30
20
10
TEMPERATURE (°C)
VIN = 6V
CIN = 1µF
COUT = 1µF
0
-40
Output Noise vs. Frequency
-40
100
-45
10
1
Stable Region
85
125
Power Supply Rejection Ratio
-30
-35
COUT = 1µF
to 10µF
PSRR (dB)
1.0
-10
0
20
40
TEMPERATURE (°C)
Stability Region vs. Load Current
1000
RLOAD = 50Ω
COUT = 1µF
CIN = 1µF
COUT ESR (Ω)
NOISE (µV/√Hz)
10.0
-20
-50
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1µF
-55
-60
-65
0.1
-70
0.1
-75
0.0
0.01K 0.1K
0.01
1K
10K 100K 1000K
FREQUENCY (Hz)
 2002 Microchip Technology Inc.
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
-80
0.01K 0.1K
1K
10K 100K 1000K
FREQUENCY (Hz)
DS21368B-page 7
TC1223/TC1224
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO
Measure Fall Time of 3.3V LDO
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 184µS
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 52µS
VSHDN
VSHDN
VOUT
VOUT
Measure Rise Time of 5.0V LDO
Measure Fall Time of 5.0V LDO
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 192µS
Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 88µS
VSHDN
VSHDN
VOUT
VOUT
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF
VOUT
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
DS21368B-page 8
 2002 Microchip Technology Inc.
TC1223/TC1224
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
“1” & “2” = part number code + temperature range and
voltage
(V)
TC1223
Code
TC1224
Code
2.5
L1
M1
2.7
L2
M2
2.8
LZ
MZ
2.85
L8
M8
3.0
L3
M3
3.3
L5
M5
3.6
L9
M9
4.0
L0
M0
5.0
L7
M7
“3” represents year and quarter code
“4” represents lot ID number
6.2
Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
5-Pin SOT-23A
 2002 Microchip Technology Inc.
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in
DS21368B-page 9
TC1223/TC1224
6.3
Package Dimensions
SOT-23A-5
.075 (1.90)
REF.
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.010 (0.25)
.004 (0.09)
10° MAX.
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21368B-page 10
 2002 Microchip Technology Inc.
TC1223/TC1224
SALES AND SUPPORT
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21368B-page 11
TC1223/TC1224
NOTES:
DS21368B-page 12
 2002 Microchip Technology Inc.
TC1223/TC1224
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
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© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
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 2002 Microchip Technology Inc.
DS21368B-page 13
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2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
China - Hong Kong SAR
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
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DS21368B-page 14
 2002 Microchip Technology Inc.