TI TC240

TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
•
•
•
•
•
•
•
•
•
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•
•
High-Resolution, Solid-State Image Sensor
for NTSC Color TV Applications
11-mm Image-Area Diagonal, Compatible
With 2/3” Vidicon Optics
754 (H) x 244 (V) Active Elements in
Image-Sensing Area
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Separate Outputs for Each Color (RGB)
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE
(TOP VIEW)
SUB
1
22
SUB
IAG
2
21
ABG
SAG
3
20
IAG
TDB
4
19
SAG
ADB
5
18
SRG3
OUT3 (B)
6
17
SRG2
OUT2 (G)
7
16
SRG1
OUT1 (R)
8
15
TRG
AMP GND
9
14
IDB
GND
10
13
CDB
SUB
11
12
SUB
description
The TC240 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip color
NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC240 is configured into 244 lines with 780 elements in each line. Twenty-four
elements are provided in each line for dark reference. The blooming protection incorporated into the sensor is
based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is
activated by supplying clocking pulses to the antiblooming gate, an integral part of each image-sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The single-chip color-sensing capability of the TC240 is achieved
by laminating a striped color filter with RGB organization on top of the image-sensing area. The stripes are
precisely aligned to the sensing elements, and the signal charge columns are multiplexed during the readout
into three separate registers with three separate outputs corresponding to each individual color.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on chip
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC240 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking. The TC240 is characterized for operation
from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright  1991, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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2-101
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
functional block diagram
Top Drain
21
IAG
TDB
SAG
ADB
OUT3 (B)
2
Image Area With
Blooming Protection
4
20
OUT1 (R)
3
5
Amplifiers
Storage Area
6
Multiplexer, Transfer
Gates and Serial Registers
7
18
17
16
8
15
Clearing Drain
6 Dummy
Elements
2-102
IAG
Dark Reference Elements
19
OUT2 (G)
ABG
9
AMP GND
10
GND
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13
CDB
• DALLAS, TEXAS 75265
14
IDB
SAG
SRG3
SRG2
SRG1
TRG
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
sensor topology diagram
753
3
24
1
1
Image-Sensing
Area
244
488
Image-Storage
Area
One 1/2 - Amplitude Element
7
251
8
251
8
251
One 1/2 - Amplitude Element
6 Dummy
Columns
Terminal Functions
PIN
I/O
DESCRIPTION
NAME
NO.
ABG
21
I
Antiblooming gate
ADB
5
I
Supply voltage for amplifier-drain bias
AMP GND
9
CDB
13
GND
IAG†
10
2
I
Image-area gate
IAG†
20
I
Image-area gate
IDB
14
I
Supply voltage for input-diode bias
OUT1 (R)
8
O
Output signal 1
OUT2 (G)
7
O
Output signal 2
OUT3 (B)
SAG†
6
O
Output signal 3
3
I
Storage-area gate
SAG†
19
I
Storage-area gate
SRG1
16
I
Serial-register gate 1
SRG2
17
I
Serial-register gate 2
SRG3
SUB†
18
I
Serial-register gate 3
Amplifier ground
I
Supply voltage for clearing-drain bias
Ground
1
Substrate and clock return
SUB†
SUB†
11
Substrate and clock return
12
Substrate and clock return
SUB†
22
TDB
4
Substrate and clock return
I
Supply voltage for top-drain bias
TRG
15
I
Transfer gate
† All pins of the same name should be connected together externally.
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2-103
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
detailed description
The TC240 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer with serial registers and transfer gates, and (4) the buffer amplifier with charge-detection
nodes. Location of each of these blocks is shown in the functional block diagram.
image-sensing and storage areas
Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
is activated by the application of a burst of pulses every horizontal blanking interval. This prevents blooming
caused by the spilling of charge from overexposed elements into neighboring elements. After the completion
of integration, the signal charge is transferred into the storage area. To generate the dark reference that is
necessary in subsequent video processing circuits for restoration of the video black level, there are 23 full
columns and one half-column of elements at the left edge of the image-sensing area that are shielded from
incident light. Two full columns and one half-column of elements at the right of the image-sensing area are also
shielded from incident light. Thus, the total number of elements per row is 780 (753 active elements plus 25
shielded elements and 2 transitional elements).
multiplexer with transfer gates and serial registers
The color sensitivity of the TC240 is obtained by laminating a color stripe filter on top of the image-sensing area
and aligning it precisely with the vertical columns of sensing elements. This separates the columns into three
groups corresponding to the red, green, and blue colors used in the filter. The function of the multiplexer and
transfer gates is to transfer the charge line by line from each group of columns into the corresponding serial
register and to prepare it for readout. Multiplexing is activated during the horizontal blanking interval by applying
appropriate pulses to the transfer gates and serial registers. The required pulse timing is shown in Figure 3. A
drain is included in this area to provide the capability to quickly clear the image-sensing and storage areas of
unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under special
circumstances when nonstandard TV operation is desired.
buffer amplifier with charge-detection nodes
The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of a charge-detection
node and one of the three amplifiers. As charge is transferred into the detection node, the potential of this node
changes in proportion to the amount of signal received. This change is sensed by an MOS transistor and, after
proper buffering, the signal is supplied to the output terminal of the image sensor. After the potential change has
been sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset
is accomplished by a reset gate that is connected internally to the serial register. The detection nodes and
corresponding amplifiers are located some distance away from the edge of the storage area; six dummy
elements are used to span this distance. The location of the dummy elements is shown in the functional block
diagram.
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
11.5 µm
Light
Clocked Barrier
IAG
27 µm
Virtual Barrier
ABG
Antiblooming
Clocking Levels
Antiblooming Gate
Virtual Well
Clocked Well
Accumulated Charge
Figure 1. Charge-Accumulation Process
SAG
Clocked Phase
Virtual Phase
Channel Stops
Figure 2. Charge-Transfer Process
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2-105
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
Composite
Blanking
ABG
IAG
SAG
TRG
SRG 1
SRG2
SRG3
Expanded
Horizontal
Blanking Interval
Figure 3. Timing Diagram
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
Reference Generator
ADB
CCD Register
Clocked Virtual
Gate
Gate
Detection Node
Reset Gate
and
Output Diode
Two-Stage
SourceFollower
Amplifier
OUTn
SRGn
Figure 4. Buffer Amplifier and Charge Detection Node
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2-107
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
spurious nonuniformity specification
The spurious nonuniformity specification of the TC240 CCD grades – 10, – 20, – 30, and – 40 is based on several
sensor characteristics:
•
•
•
•
•
•
Amplitude of the nonuniform pixel
Polarity of the nonuniform pixel
– Black
– White
Location of the nonuniformity (see Figure 5)
– Area A
Element columns near horizontal center of the area
Element rows near vertical center of the area
– Area B
Up to the pixel or line border
Up to Area A
– Other
Edge of the imager
Up to Area B
Nonuniform pixel count
Distance between nonuniform pixels
Column amplitude
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated
condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7.
15 Pixels
360
Pixels
233
Lines
A
7
Lines
B
11
Lines
20 Pixels
Figure 5. Sensor Area Map
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
mV
Amplitude
% of Total
Illumination
t
t
Figure 6. Pixel Nonuniformity,
Dark Condition
Figure 7. Pixel Nonuniformity,
Illuminated Condition
The grade specification for the TC240 is as follows (CCD video output signal is 50 mV ±10 mV):
Pixel nonuniformity:
DARK CONDITION
PART
NUMBER
TC240 10
TC240-10
TC240-20
TC240 30
TC240-30
TC240-40
PIXEL
AMPLITUDE, x
AMPLITUDE
(MV)
ILLUMINATED CONDITION
NONUNIFORM PIXEL TYPE
WHITE BLACK
W/B†
AREA
AREA
AREA
A
B
A
B
A
B
DISTANCE
SEPARATION
% OF TOTAL
ILLUMINATION
AREA A
AREA B
x ≤ 2.5
2
5
2
5
2
5
x≤5
2
5
x > 2.5
0
0
0
0
0
0
x>5
0
0
x > 3.5
0
0
0
0
0
0
x>5
0
0
2.5 < x ≤ 3.5
2
5
2
5
2
5
5 < x ≤ 7.5
2
5
x > 3.5
0
0
0
0
0
0
x > 7.5
0
0
3.5 < x ≤ 7
3
7
3
7
3
7
7.5 < x ≤ 15
3
7
x>7
0
0
0
0
0
0
x > 15
0
0
TOTAL
COUNT‡
X
Y
AREA
10
150
100
A B
A,
—
—
—
—
12
100
80
A
15
—
—
—
† White and black nonuniform pixel pair
‡ The total spot count is the sum of 1) the numbers of nonuniform white pixels, nonuniform black pixels, and nonuniform white/black pixel pairs
while the sensor is in the dark condition and 2) the number of nonuniform black pixels while the sensor is in the illuminated condition. The total
spot count will not exceed the values shown in this column.
Column nonuniformity:
PART
NUMBER
COLUMN
AMPLITUDE, x
(mV)
WHITE
AREAS
A AND B
BLACK
AREAS
A AND B
TC240-10
x > 0.3
0
0
TC240-20
x > 0.3
0
0
TC240-30
x > 0.5
0
0
TC240-40
x > 0.7
0
0
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2-109
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range for ADB, CDB, IDB, TDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V
Input voltage range for ABG, IAG, SAG, SRG, TRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V to 15 V
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
Supply voltage, ADB, CDB, IDB, TDB
MIN
NOM
MAX
11
12
13
Substrate bias voltage
0
High level
(1 2,
2 3)
SRG (1,
Input voltage,
voltage VI‡
1.5
Intermediate level§
IAG
TRG
Clock frequency, fclock
Capacitive load
V
2.5
Low level
– 10
–9
–8
High level
1.5
2
2.5
Low level
–10
–9
–8
High level
2
4
6
– 2.5
Low level
SAG
V
–7
High level
1.5
2
Low level
– 10
–9
–8
High level
1.5
2
2.5
2.5
Low level
– 10
–9
–8
IAG, SAG
2.05
SRG, TRG
4.77
ABG
2.05
OUT1 (R), OUT2 (G), OUT3 (B)
V
–5
Intermediate level§
ABG
2
UNIT
8
MHz
pF
Operating free-air temperature, TA
– 10
45
°C
‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
§ Adjustment is required for optimal performance.
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
electrical characteristics over recommended operating range of supply voltage, TA = –10°C to 45°C
PARAMETER
Dynamic range (see Note 2)
MIN
Antiblooming disabled (see Note 3)
Charge conversion factor
Charge transfer efficiency (see Note 4)
Signal response delay time, τ (see Note 5 and Figure 11)
Gamma (see Note 6)
Output resistance
TYP†
1.4
1.6
0.9999
0.99995
18
20
0.97
0.98
1/f noise (5 kHz)
0.13
Random noise (f = 100 kHz)
0.11
Noise equivalent signal
120
Rejection ratio at 4.77 MHz
ADB (see Note 7)
20
SRGn (see Note 8)
40
ABG (see Note 9)
20
Supply current
UNIT
dB
700
Noise voltage
MAX
60
1.8
µV/e
22
ns
800
Ω
µV/√HZ
electrons
5
IAG
mA
12000
SRG 1, 2, 3
Input capacitance, Ci
dB
120
ABG
4000
TRG
350
pF
SAG
14000
† All typical values are at TA = 25°C.
NOTES: 2. Dynamic range is – 20 times the logarithm of the mean noise signal divided by the saturation output signal.
3. For this test, the antiblooming gate must be biased at the intermediate level.
4. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
5. Signal response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.
6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this
value represents points near saturation):
ǒ
Ǔ +ǒ
Exposure (2)
Exposure (1)
g
Ǔ
Output signal (2)
Output signal (1)
7. ADB rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
8. SRGn rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.
9. ABG rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
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2-111
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
optical characteristics, TA = 40°C and integration time = 16.67 ms (unless otherwise noted)
PARAMETER
MIN
Red
Sensitivity
TYP
MAX
120
Measured at VU
(see Notes 10 and 11)
Green
0.9
Blue
UNIT
mV/lx
mV
0.6
Saturation signal, Vsat
(see Note 12)
Antiblooming disabled, interlace off
320
400
mV
Maximum usable signal, Vuse
Antiblooming enabled, interlace on
180
360
mV
Blooming overload ratio (see Note 13)
Interlace on
100
Interlace off
200
200 x 103
Image-area well capacity
Smear (see Note 14)
Dark current
Dark signal (see Note 16)
Pixel uniformity
Column uniformity
Shading
See Note 15
Interlace off
TA = 21°C
TC240-10
TA = 45°C
Output signal = 50 mV ±10 mV
Output signal = 50 mV ±10 mV
electrons
0.00072
nA/cm2
0.027
15
TC240-30
15
TC240-40
20
TC240-10
2.5
TC240-30
3.5
TC240-40
5
TC240-10
0.3
TC240-30
0.5
TC240-40
0.7
Output signal = 100 mV
mV
mV
mV
17%
NOTES: 10. The following standard imaging condition is used in the test: light box SA702 (made by Canon) is used with a lens (FL = 92 mm)
stopped to f14.3. The light power is 1.5 µW/cm2 (color temperature = 3000 K). No IR filter is used.
11. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
13. Blooming overload ratio is the ratio of blooming exposure to saturation exposure.
14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image- area vertical height with recommended clock frequencies.
15. Exposure time is 16.67 ms and the fast dump clocking rate during vertical timing is 2.05 MHz.
16. Dark signal level is measured from the dummy pixels.
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
Blooming Point
With Antiblooming
Enabled
VO
Blooming Point
With Antiblooming
Disabled
Dependent on
Well Capacity
Vsat (min)
Level Dependent
Upon Antiblooming
Gate High Level
Vuse (max)
Vuse (typ)
DR
Vn
DR (dynamic range)
Lux
(light input)
+ camera whiteV clip voltage
n
Vn = noise floor voltage
Vsat (min) = minimum saturation voltage
Vuse (max) = maximum usable voltage
Vuse (typ) = typical user voltage (camera white clip)
NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max).
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse (typ),
the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.
Figure 8. Typical Vsat, Vuse Relationship
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2-113
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
100%
VIH min
90%
Intermediate Level
10%
VIL max
0%
t1
t2
Slew rate between 10% and 90% = 70 to 120 V/µs
Ratio t1 : t2 at 2 MHz = 4:3
Ratio t1 : t2 at 1 MHz = 1:1
Figure 9. Typical Clock Waveform for ABG, IAG, and SAG
VIH min
100%
90%
10%
VILmax
0%
t1
t2
Slew rate between 10% and 90% = 300 V/µs
Ratio t1 : t2 = 1:1
Figure 10. Typical Clock Waveform for SRG1, SRG2, SRG3, and TRG
1.5 V to 2.5 V
SRG
–8V
– 8 V to –10 V
0%
OUT
90%
100%
CCD Delay
τ
10 ns
15 ns
Sample
and
Hold
Figure 11. SRG and CCD Output Waveforms
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
TYPICAL CHARACTERISTICS
VERTICAL MODULATION
TRANSFER FUNCTION
(BARS PARALLEL TO SERIAL REGISTER)
HORIZONTAL MODULATION
TRANSFER FUNCTION
(BARS PERPENDICULAR TO SERIAL REGISTER)
1
MTF – Modulation Transfer Function
MTF – Modulation Transfer Function
1
0.8
0.6
0.4
0.2
λ = 400 to 700-nm Monochromatic Light
VADB = 12 V
TA = 25°C
0
0.8
0.6
0.4
0.2
λ = 400 to 700-nm Monochromatic Light
VADB = 12 V
TA = 25°C
0
0
0.2
0.4
0.6
0.8
1
0
0.2
Normalized Spatial Frequency
0
3.7
7.4
11.1
14.8
0.4
0
18.5
8.7
Spatial Frequency – Cycles/mm
17.4
26.1
34.8
43.5
Figure 13
NOISE SPECTRUM OF OUTPUT AMPLIFIER
SPECTRAL RESPONSE WITH COLOR FILTER
1
1000
VADB = 12 V
TA = 25°C
G
TA = 25°C
Relative Response
100
10
R
B
0.8
Hz
1
Spatial Frequency – Cycles/mm
Figure 12
Noise – nV/
0.8
0.6
Normalized Spatial Frequency
0.6
0.4
0.2
1
103
104
105
f – Frequency – Hz
106
107
0
400
450
500
550
600
650
700
λ – Wavelength – nm
Figure 14
Figure 15
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TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
TYPICAL CHARACTERISTICS
SPECTRAL RESPONSE WITHOUT COLOR FILTER
0.8
TA = 25°C
300
Quantum Efficiency
Responsitivity – mA/W
400
0.5
200
0.3
150
100
400
500
600
λ – Wavelength – nm
Figure 16
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700
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
APPLICATION INFORMATION
VABG+
V
VSS
IALVL
20
1
47 kΩ
19
2
3
47 kΩ
18
17
4
5
P-Driver
TMS3473B
16
15
6
14
7
8
13
12
9
11
ADB
ABLVL
20
1
19
2
3
18
17
4
5
6
16
S-Driver
15
TMS3472A
14
7
8
13
12
100 9
pF
11
10
47 kΩ
1
2
19
4
5
18
17
VABG–
16
10
CP2
22
21
20
100 pF
SH1
6
7
TC240
15
14
8
13
12
10
11
9
L
1
4.7 µF
2
+
100 Ω 3
4.7 µF
+
4
100 Ω 5
4.7 µF
6
+
100 Ω 7
+
8
4.7 µF
16
15
14
13
12
11
10
9
S/H
TL1593
SH2, 3
SH1
OUT3 (B)
OUT2 (G)
OUT1 (R)
100 Ω
100 Ω
100 Ω
100 Ω
VCC
47 kΩ
VCC
22 21 20 19 18 17 16 15 14 13 12
23
24
11
10
ABS2
25
9
ABS0
26
27
8
7
SC (90)
6
5
BF
28
29
1 kΩ
SH2, 3
3
1 kΩ
TMS3471C
2/3 NTSC Clock
ABS1
SC
30
4
CBLK
CSYNC
31
32
3
2
CP1
33
1
20 pF
34 35 36 37 38 39 40 41 42 43 44
CP2
BCP2
4.7 kΩ
VCC
Oscillator
14.3 MHz
GT3
GT2
GT1
15 pF
DC VOLTAGES
12 V
ADB
5V
VCC
– 10 V
VSS
2V
V
– 2.5 V
ABLVL
–5 V
IALVL
4V
VABG +
–6 V
VABG –
SUPPORT CIRCUITS
DEVICE
PACKAGE
APPLICATION
FUNCTION
TMS3471CFS
44-pin flat pack
Timing generator
NTSC timing generator
TMS3472AKL
20-pin flat pack with tabs
Serial driver
Driver for TRG, SRG1, SRG2, and SRG3
TMS3473BDW
20-pin small-outline package
Parallel driver
Driver for IAG, SAG, and ABG
TL1593CNS
16-pin SO (EIAJ)
Sample and hold
Three-channel sample-and-hold IC
Figure 17. Typical Application Circuit Diagram
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
2-117
TC240
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS005A – OCTOBER 1985 – REVISED DECEMBER 1991
MECHANICAL DATA
The package for the TC240 consists of a ceramic base, a glass window, and a 22-lead frame. The glass window
is sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization
and fit into mounting holes with 2.54 mm (0.10 inch) center-to-center spacings.
TC240 (22-pin)
23,39 (0.921)
Optical Center
2,01 x 2,39
(0.079 x 0.094)
2,01 (0.079)
Optical
(see Note B)
C
L
18,24
(0.718)
9,35 (0.368)
REF
8,00 (0.315)
Index Dot
27,81 (1.095) MAX
18,54 MAX
(0.730)
3,86 (0.152) MAX
0,25 (0.010)
2,79 (0.110)
0,46 (0.018)
10,16 (0.400) TYP
2,54 (0.100)
5,50 ± 0,76
(0.217 ± 0.030)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
NOTES: A. Single dimensions are nominal.
B. The center of the package and the center of the image area are not coincident.
C. The distance from the top of the glass to the image sensor surface is typically 1,46 mm (0.057 inch). The glass is 0,95 ±0,08 mm
and has an index of refraction of 1.53.
D. Each pin centerline is located within 0,25 mm (0.010 inch) of its true longitudinal position.
2-118
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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