TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140/141/142 Equivalent Circuit C B TO-3P 1 R1 1.Base 2.Collector 3.Emitter R1 ≅ 8kΩ R2 ≅ 0.12kΩ Absolute Maximum Ratings* Symbol R2 E TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage : TIP145 : TIP146 : TIP147 - 60 - 80 - 100 V V V VCEO Collector-Emitter Voltage : TIP145 : TIP146 : TIP147 - 60 - 80 - 100 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25°C) 125 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2009 Fairchild Semiconductor Corporation TIP145 / TIP146 / TIP147 Rev. B1 www.fairchildsemi.com 1 TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor October 2009 Symbol Parameter VCEO(sus) Collector-Emitter Sustaining Voltage : TIP145 : TIP146 : TIP147 ICEO Test Condition IC = - 30mA, IB = 0 Min. Typ. Max. - 60 - 80 - 100 Units V V V Collector Cut-off Current : TIP145 : TIP146 : TIP147 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 -2 -2 -2 mA mA mA Collector Cut-off Current : TIP145 : TIP146 : TIP147 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 -1 -1 -1 mA mA mA IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 -2 mA hFE DC Current Gain VCE = - 4V,IC = - 5A VCE = - 4V, IC = - 10A VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA -2 -3 V V VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A -3 V ICBO tD Delay Time tR Rise Time tSTG Storage Time VCC = - 30V, IC = - 5A IB1= -20mA, IB2 = 20mA RL = 6Ω tF Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation TIP145 / TIP146 / TIP147 Rev. B1 1000 500 0.15 μs 0.55 μs 2.5 μs 2.5 μs www.fairchildsemi.com 2 TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor Electrical Characteristics* TA=25°C unless otherwise noted 100000 -10 VCE = -4V -8 -7 IB = -2000μA -6 IB = -1800μA IB = -1600μA IB = -1400μA IB = -1200μA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -9 IB = -1000μA -5 IB = -800μA -4 -3 IB = -600μA -2 10000 1000 IB = -400μA -1 100 -0.1 -0 -0 -1 -2 -3 -4 -5 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -1000 IC=-500IB f=0.1MHz VBE(sat) -1 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 VCE(sat) -0.1 -0.01 -0.1 -100 -10 -1 -10 -100 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 150 -100 PC[W], POWER DISSIPATION -10 D C IC[A], COLLECTOR CURRENT 125 -1 TIP145 TIP146 TIP147 -0.1 -1 -10 -100 75 50 25 0 -1000 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2009 Fairchild Semiconductor Corporation TIP145 / TIP146 / TIP147 Rev. B1 100 www.fairchildsemi.com 3 TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP145 / TIP146 / TIP147 — PNP Epitaxial Silicon Darlington Transistor Physical Dimensions TO-3P © 2009 Fairchild Semiconductor Corporation TIP145 / TIP146 / TIP147 Rev. B1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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