TIP33A, TIP33C NPN High-Power Transistors Designed for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 in These are Pb−Free Devices* 10 AMPERE NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating TIP33A TIP33C VCEO 60 100 Vdc Collector − Base Voltage TIP33A TIP33C VCBO 60 100 Vdc VEBO 5.0 Vdc IC 10 15 Adc Apk Base Current − Continuous IB 3.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 80 0.64 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Emitter − Base Voltage Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range SOT−93 (TO−218) CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3 THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 4 1 Publication Order Number: TIP33C/D TIP33A, TIP33C MARKING DIAGRAMS TO−247 TO−218 TIP33x AYWWG AYWWG TIP33x 1 BASE 3 EMITTER 1 BASE 2 COLLECTOR TIP33x A Y WW G 3 EMITTER 2 COLLECTOR = = = = = Device Code Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION Device Order Number Package Type Shipping TIP33AG TO−218 (Pb−Free) 30 Units / Rail TIP33CG TO−218 (Pb−Free) 30 Units / Rail TIP33AG TO−247 (Pb−Free) 30 Units / Rail TIP33CG TO−247 (Pb−Free) 30 Units / Rail http://onsemi.com 2 TIP33A, TIP33C ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Min Max Unit VCEO(sus) 60 100 − − Vdc ICEO − 0.7 mA Collector−Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES − 0.4 mA Emitter−Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 1.0 mA 40 20 − 100 − − 1.0 4.0 − − 1.6 3.0 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) TIP33A TIP33C Collector−Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) TIP33A TIP33C ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 A, VCE = 4.0 V) (IC = 3.0 A, VCE = 4.0 V) hFE Collector−Emitter Saturation Voltage (IC = 3.0 A, IB = 0.3 A) (IC = 10 A, IB = 2.5 A) VCE(sat) Base−Emitter On Voltage (IC = 3.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) hfe 20 − − Current−Gain — Bandwidth Product (IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 − MHz 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 3 TIP33A, TIP33C 500 VCE = 4.0 V TJ = 25°C hFE , DC CURRENT GAIN 200 100 50 20 NPN PNP 10 5.0 0.1 10 1.0 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain 15 10 1.0ms 5.0 3.0 2.0 1.0 0.5 0.2 0.1 1.0 10ms 300ms dc SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C TIP33A IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 20 TIP33C L = 200 mH IC/IB ≥ 5.0 VBE(off) = 0 to 5.0 V TC = 100°C 15 10 5.0 0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 0 Figure 2. Maximum Rated Forward Bias Safe Operating Area 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 3. Maximum Rated Forward Bias Safe Operating Area FORWARD BIAS REVERSE BIAS The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during forward bias. The data is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C. The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn−off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode. http://onsemi.com 4 TIP33A, TIP33C PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 P −Y− K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 5 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 TIP33A, TIP33C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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