TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-60-80-100 VOLTS, 65 WATTS Features •ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V •Epoxy Meets UL 94 V-0 @ 0.125 in •Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO 40 60 80 100 Vdc Collector-Base Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 60 80 100 Vdc VEB 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ Emitter-Base Voltage Collector Current- Continuous Peak Operating and Storage Junction, Temperature Range TJ, Tstg 4 1 °C –65 to +150 TO-220AB CASE 221A STYLE 1 2 TIP4xxG AYWW 3 TIP4xx xx A Y WW G = Device Code = 1, 1A, 1B, 1C 2, 2A, 2B, 2C = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.67 °C/W Thermal Resistance, Junction-to-Ambient RqJA 57 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 7 1 Publication Order Number: TIP41A/D TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 40 60 80 100 - Vdc - 0.7 0.7 - 400 400 400 400 IEBO - 1.0 mAdc hFE 30 15 75 - Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) - 1.5 Vdc Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) - 2.0 Vdc Current-Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C ICEO TIP41, TIP41A, TIP42, TIP42A TIP41B, TIP41C, TIP42B, TIP42C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) mAdc mAdc ICES TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device Package Shipping TO-220 50 Units / Rail TIP41G TO-220 (Pb-Free) 50 Units / Rail TIP41A TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TIP42G TO-220 (Pb-Free) 50 Units / Rail TIP42A TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TIP41 TIP41AG TIP41B TIP41BG TIP41C TIP41CG TIP42 TIP42AG TIP42B TIP42BG TIP42C TIP42CG http://onsemi.com 2 PD, POWER DISSIPATION (WATTS) TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) TA 4.0 TC 80 3.0 60 2.0 40 1.0 20 0 0 TC TA 0 40 20 60 100 80 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating VCC +30 V 2.0 RC 0.7 0.5 SCOPE +11 V -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% t, TIME (s) μ RB 0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms D1 0.3 0.2 tr 0.1 0.07 0.05 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 0.02 0.06 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit td @ VBE(off) ≈ 5.0 V 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time http://onsemi.com 3 4.0 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 1.0 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 4. Thermal Response 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150°C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 0.5ms 5.0 1.0ms 3.0 TJ = 150°C 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) 0.3 0.2 0.1 5.0 5.0ms TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C 10 20 40 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active-Region Safe Operating Area 5.0 300 ts t, TIME (s) μ 1.0 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 30 0.5 6.0 Figure 6. Turn-Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 30 50 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) hFE, DC CURRENT GAIN 300 200 VCE = 2.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7.0 5.0 0.06 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 -55°C 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 2.0 TJ = 25°C 1.6 1.2 IC = 1.0 A 0.4 0 6.0 10 θV, TEMPERATURE COEFFICIENTS (mV/ °C) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0.2 0.3 0.4 IC, COLLECTOR CURRENT (A) μ 50 100 200 300 IB, BASE CURRENT (mA) 500 0.6 1.0 2.0 3.0 4.0 6.0 +2.0 1000 *APPLIES FOR IC/IB ≤ hFE/4 +1.5 +1.0 +25°C to +150°C +0.5 *qVC FOR VCE(sat) 0 -55°C to +25°C -0.5 +25°C to +150°C -1.0 -1.5 qVB FOR VBE -55°C to +25°C -2.0 -2.5 0.06 0.1 0.2 0.3 0.5 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients VCE = 30 V TJ = 150°C 100°C 25°C 100 IC = ICES 10-1 REVERSE FORWARD 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 6.0 10M VCE = 30 V 1.0M 10-3 -0.3 -0.2 -0.1 1.0 IC, COLLECTOR CURRENT (AMP) R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.1 103 10-2 30 +2.5 TJ = 25°C 101 20 Figure 9. Collector Saturation Region 2.0 102 5.0 A 0.8 Figure 8. DC Current Gain 0 0.06 2.5 A IC = 10 x ICES IC ≈ ICES 100k 10k IC = 2 x ICES 1.0k 0.1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 5 TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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