TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR Copyright © 1999, Power Innovations Limited, UK FEBRUARY 1999 OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS ● Programmable Protection Configurations up to ±100 V ● Typically 5 Lines Protected by Two TISP83121D + Diode Steering Networks ● ● ● High Surge Current - 150 A 10/1000 µs - 150 A 10/700 µs - 500 A 8/20 µs D PACKAGE (TOP VIEW) K 1 8 K G1 2 7 A G2 3 6 A K 4 5 K MD6XAYA For operation at the rated current values connect pins 1, 4, 5 and 8 together. Pin compatible with the LCP3121 - Functional Replacement in Diode Steering Network Applications - 50% more surge current device symbol A Small Outline Surface Mount Package - Available Ordering Options CARRIER PART # Tube TISP83121D Taped and reeled TISP83121DR G2 G1 description The TISP83121D is a dual-gate reverse-blocking unidirectional thyristor designed for the protection of dual-voltage ringing SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The device chip is a four-layer NPNP silicon thyristor structure which has an electrode connection to every layer. For negative overvoltage protection the TISP83121D is used in a common anode configuration with the voltage to be limited applied to the cathode (K) terminal and the negative reference potential applied to the gate 1 (G1) terminal. For positive overvoltage protection the TISP83121D is used in a common cathode configuration with the voltage to be limited applied to the anode (A) terminal and the positive reference potential applied to the gate 2 (G2) terminal. The TISP83121D is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line conductor and the protector. Further, the gate reference supply voltage requires an appropriately poled series diode to prevent the K supply from being TISP83121D crowbars. SD6XAKA shorted when the Under low level power cross conditions the TISP83121D gate current will charge the gate reference supply. If the reference supply cannot absorb the charging current its potential will increase, possibly to damaging levels. To avoid excessive voltage levels a clamp (zener or avalanche breakdown diode) may be added in shunt with the supply. Alternatively, a grounded collector emitter-follower may be used to reduce the charging current by the transistors HFE value. This monolithic protection device is made with a ion-implanted epitaxial-planar technology to give a consistent protection performance and be virtually transparent to the system in normal operation. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR FEBRUARY 1999 absolute maximum ratings RATING SYMBOL VALUE UNIT V DRM 100 V Repetitive peak off-state voltage, 0 °C to 70 °C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 µs (GR-1089-CORE, open-circuit voltage wave shape 10/1000 µs) 150 ITSP 5/310 µs (CCITT K20/21, open-circuit voltage wave shape 7 kV10/700 µs) A 150 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 500 Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2) 22 100 ms 1s 8 ITSM A 3 900 s Junction temperature Storage temperature range TJ -40 to +150 °C Tstg -65 to +150 °C NOTES: 1. Initially the protector must be in thermal equilibrium with 0 °C < TJ < 70 °C. The surge may be repeated after the device returns to its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together. 2. Above 70 °C, derate linearly to zero at 150 °C lead temperature. electrical characteristics, TJ = 25 °C (unless otherwise noted) PARAMETER ID IDRM Off-state current Repetitive peak off-state current MAX UNIT Vd = 70 V, IG = 0 TEST CONDITIONS MIN TYP 1 µA Vd = VDRM = 100 V, IG = 0, 0 °C to 70 °C 10 µA TJ = 0 to 70 °C IH IR Holding current Reverse current IT = 1 A, di/dt = -1A/ms 300 TJ = 25 °C 90 TJ = 70 °C 60 mA VR = 0.3 V 1 mA IG1T Gate G1 trigger current IT = +1 A, tp(g) = 20 µs +200 mA IG2T Gate G2 trigger current IT = +1 A, tp(g) = 20 µs -180 mA VG1T G1-K trigger voltage IT = +1 A, tp(g) = 20 µs +1.8 V VG2T G2-A trigger voltage IT = +1 A, tp(g) = 20 µs -1.8 V f = 1 MHz, Vd = 1 VRMS, VD = 5 V, IG = 0 (see Note 3) 100 pF CAK NOTE Anode to cathode offstate capacitance 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are decoupled to the guard terminal of the bridge. thermal characteristics PARAMETER RθJA Junction to free air thermal resistance TEST CONDITIONS TA = 25 °C, EIA/JESD51-3 PCB, EIA/JESD51-2 environment, IT = ITSM(900) PRODUCT INFORMATION 2 MIN TYP MAX UNIT 105 °C/W TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR FEBRUARY 1999 PARAMETER MEASUREMENT INFORMATION +i QUADRANT 1 ANODE POSITIVE SWITCHING CHARACTERISTIC VGT IH VR ID -v VDRM IR QUADRANT III ANODE NEGATIVE REVERSE CHARACTERISTIC -i REFERENCE VOLTAGE +v PM6XAGB Figure 1. VOLTAGE-CURRENT CHARACTERISTIC multiple line overvoltage protection Figure 2 shows two TISP83121D devices protecting many lines. Line conductor positive overvoltage protection is given by the steering diode array connected to the anode of the upper TISP83121D and the TISP83121D itself. The TISP83121D gate reference voltage is the positive battery supply, +VBAT. The initial limiting voltage will be the sum of the voltages of the battery, the forward biased conductor diode, the gate trigger of the TISP83121D and the forward biased reference voltage blocking diode. Typically the conductor voltage will be initially limited at 2.5 V above the +VBAT value. Line conductor negative overvoltage protection is given by the diode steering array connected to the cathode of the lower TISP83121D and the TISP83121D itself. The TISP83121D gate reference voltage is the negative battery supply, -VBAT. The initial limiting voltage will be the sum of the voltages of the battery, the forward biased conductor diode, the gate trigger of the TISP83121D and the forward biased reference voltage blocking diode. Typically the conductor voltage will be initially limited at 2.5 V below the -VBAT value. When an TISP83121D crowbars and grounds all conductors of the appropriate polarity, the device current will be the sum of all the SLIC output currents. This will usually exceed the TISP83121D holding current. To switch off the TISP83121D and restore normal operation, the grounded condition of the SLIC output must be detected and the SLIC outputs turned off. The 150 A rating of the TISP83121D allows a large number of lines to be protected against currents caused by lightning. For example, if a recommendation K.20 10/700 generator was connected to all lines, together PRODUCT INFORMATION 3 TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR FEBRUARY 1999 R1 R SLIC 1 LINE 1 IN +VE REFERENCE VOLTAGE +VBAT A R T1 G2 G1 TISP83121D R K 0 A R G2 RN G1 TISP83121D -VBAT -VE REFERENCE VOLTAGE SLIC N R K LINE N IN R TN AI8XAA Figure 2. N LINE POSITIVE AND NEGATIVE OVERVOLTAGE PROTECTION A +VE REFERENCE VOLTAGE A +VE REFERENCE VOLTAGE G2 +VBAT +VBAT G2 G1 TISP83121D G1 TISP83121D K K 0 0 A G2 TISP83121D A G2 TISP83121D G1 -VE REFERENCE VOLTAGE K -VBAT (A) -VBAT -VE REFERENCE VOLTAGE AI8XAB G1 K (B) Figure 3. REFERENCE VOLTAGE CONTROL BY (A) BREAKDOWN DIODES OR (B) BY TRANSISTOR BUFFERS with 350 V primary protection and a series conductor resistance (R) of 25 Ω, the maximum conductor current before the primary protection operated would be 350/25 = 14 A or 28 A per line. For a total return current of about 150 A the number of lines would be 150/28 = 5. At this current level, 5x28 = 140 A, the generator PRODUCT INFORMATION 4 TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR FEBRUARY 1999 voltage would be 140((25+25)/10+15) = 2800 V. Another limitation is long term power cross. The long term power cross capability of the TISP83121D is 3 A peak or 2.1 A rms. If the line conductor overcurrent protection was given by a PTC resistor which switched at 0.2 A, the maximum number of conductors becomes 2.1/0.2 = 10 or 5 lines. battery supply impedance In many designs, the battery supply voltages are generated by switching mode power supplies. This type of power supply cannot be charged like a battery. Feeding a charging current to a switching mode power supply will usually cause the supply to stop switching and the voltage to rise. The gate current of the TISP83121D is a charging current for the supply. To avoid the supply voltage from rising and damaging the connected SLICs, an avalanche diode voltage clamp can be connected across the supply (Figure 3. (A)). Another approach is to reduce the gate charging current for the supply by a transistor buffer (Figure 3. (B)). If the transistor gain was 50, a 200 mA gate current would be reduced to a supply charging current of 200/50 = 4 mA In both cases, the dissipation in the control devices can be substantial and power capability needs to be taken into account in device selection. PRODUCT INFORMATION 5 TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR FEBRUARY 1999 MECHANICAL DATA D008 plastic small-outline package This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. D008 Designation per JEDEC Std 30: PDSO-G8 5,00 (0.197) 4,80 (0.189) 8 7 6 5 1 2 3 4 6,20 (0.244) 5,80 (0.228) 4,00 (0.157) 3,81 (0.150) 7° NOM 3 Places 1,75 (0.069) 1,35 (0.053) 0,50 (0.020) x 45°NOM 0,25 (0.010) 0,203 (0.008) 0,102 (0.004) 0,79 (0.031) 0,28 (0.011) 7° NOM 4 Places 0,51 (0.020) 0,36 (0.014) 8 Places Pin Spacing 1,27 (0.050) (see Note A) 6 Places 5,21 (0.205) 4,60 (0.181) 0,229 (0.0090) 0,190 (0.0075) 4° ± 4° 1,12 (0.044) 0,51 (0.020) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES NOTES: A. B. C. D. Leads are within 0,25 (0.010) radius of true position at maximum material condition. Body dimensions do not include mold flash or protrusion. Mold flash or protrusion shall not exceed 0,15 (0.006). Lead tips to be planar within ±0,051 (0.002). PRODUCT INFORMATION 6 MDXXAA TISP83121D DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR FEBRUARY 1999 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1999, Power Innovations Limited PRODUCT INFORMATION 7