High Precision Hall-Effect Switch TLE4966H Data Sheet Version 1.0 2003-11-20 Features • • • • • • • • • • • • • • • 2.7V to 24V supply voltage operation Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by active error compensation Reverse battery protection (-18V) Superior temperature stability Peak temperatures up to 195°C without damage Low jitter (typ. 1µs) Digital output signal Bipolar version Excellent matching between the 2 Hall probes Hall plate distance 1.45mm Direction & speed information Direction signal switches 1 µs before the speed signal SMD package P-TSOP-6-6-3 Type TLE4966H Ordering Code Q62705-K693 P-TSOP-6-6-3 Package P-TSOP-6-6-3 Functional Description The TLE4966H is an integrated circuit double Hall-effect sensor designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. The TLE4966H provides a speed signal at Q2 for every magnetic pole pair and a direction information at Q1. The direction output switches 1µs (min.) before the speed output. TLE4966H Circuit Description The chopped Double Hall Switch comprises two Hall probes, bias generator, compensation circuits, oscillator, and output transistors. The bias generator provides currents for the Hall probes and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probes caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensures high accurate magnetic switching points. Figure 1: Block Diagram Data Sheet 2/11 2003-11-20 TLE4966H Pin Configuration Figure 2: Pin Configuration Pin Definition and Functions P-TSOP-6-6-3 package Pin 1 2 3 4 5 6 Symbol Function Q2 GND Q1 Vs GND GND Speed Recommended connection to GND Direction Supply voltage Recommended connection to GND Ground Data Sheet 3/11 2003-11-20 TLE4966H Absolute Maximum Ratings Tj = -40 to 150°C Parameter Supply Voltage Supply Current through protection device Output Voltage Continuous Output Current Junction Temperature Symbol VS min. -18 -18 -18 -50 max. 18 24 26 +50 Unit V 18 26 +50 V IQ -0.7 -0,7 -50 Tj - IS VQ Conditions for 1h ,Rs>=200 Ohm for 5min, Rs>=200 Ohm mA for 5 min @ 1.2 kOhm pull up mA 155 °C for 2000 h (not additive) 165 for 1000 h (not additive) 175 for 168 h (not additive) 195 for 3x1 h (additive) Storage Temperature TS -40 150 °C Magnetic Flux Density B unlimit. mT Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD Protection Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Parameter ESD Voltage Symbol VESD max. ±4 Unit kV Conditions HBM, R= 1.500 Ohm, C= 100pF; TA = 25°C Operating Range Parameter Supply Voltage Symbol VS min. 2.7 Output Voltage Junction Temperature VQ Tj -0.7 -40 - Output Current IQ 0 - Data Sheet typ. - 4/11 max. 18 24 26 18 150 175 10 Unit V Conditions 1h with RS >= 200 Ohm for 5min RS >=2 00 Ohm V °C for 168 h mA 2003-11-20 TLE4966H AC/DC Characteristics over operating range, unless otherwise specified. Typical values correspond to VS=12V and TA=25°C. Parameter Supply Current Reverse Current Output Saturation Voltage Output Leakage Current Output Fall Time Output Rise Time Chopper Frequency Switching Frequency 2) Delay Time Delay of Count Signal 3) Output Jitter Symbol IS ISR VQSAT IQLEAK tf min. 3 0 - typ. 5.5 0.2 0.3 0.05 0.2 max. 8 1 0.6 10 1 Unit mA mA V µA µs tr - 0.2 1 µs fOSC fSW td 0 - 320 13 1 1 1) 15 - td,count tQJ Conditions VS = 2.7V .. 18V VS= -18V IQ= 10mA for VQ=18 V RL= 1.2 kOhm ;CL<50pF; Figure 3 RL= 1.2 kOhm ;CL<50pF; Figure 3 kHz kHz µs µs µsRMS Typ. Value for Square-Wave Signal 1kHz µTRMS Typ. Value for ∆B/∆t>12mT/ms µs VS >= 2.7V mm K/W BREP Repeatability of magnetic 40 4) thresholds 5) Power-On Time tPON 13 Distance of Hall plates dHALL 1.45 6) Thermal Resistance RthJA 100 P-TSOP-6-6-3 1) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path. 2) Systematic delay between magnetic threshold reached and output switching. 3) Jitter is the unpredictable deviation of the output switching delay. 4) BREP is equivalent to the noise constant. 5) Time from applying VS >= 2.7 V to the sensor until the output state is valid. 6) Thermal resistance from junction to ambient. e.g.: VS=12.0 V, IS_typ=5.5 mA, VQSAT_typ=0.3 V, 2*IQ=10mA => Power Dissipation Pdis= 72.0 mW. In TA = Tj – (RthJA * Pdis) = 175 °C – (100 K/W * 0.072 W) => TA = 167.8 °C Data Sheet 5/11 2003-11-20 TLE4966H Magnetic Characteristics over operating range, unless otherwise specified. Typical values correspond to VS=12V. Parameter Operate Point TLE4966H Symbol BOP Release Point TLE4966H BRP Hysteresis TLE4966H BHYS Magnetic Matching TLE4966H Bmatch Magnetic Offset TLE4966H BOFF Tj [°C] min. typ. max. -40 25 150 5.2 5.0 4.7 7.7 7.5 7.1 10.3 10.0 9.5 -40 25 150 -10.3 -10.0 -9.5 -7.7 -7.5 -7.1 -5.2 -5.0 -4.7 -40 25 150 10.0 - 15.0 - 20.0 - -40 25 150 -3.0 - 0 - 3.0 - -40 25 150 -3.0 - 0 - 3.0 - Unit mT Conditions mT mT mT Valid for BOP1-BOP2 and BRP1-BRP2 mT (BOP+BRP)/2 Temperature TC ppm/°C Compensation of -350 Magnetic Thresholds Positive magnetic fields related with south pole of magnet to the branded side of package. Note: Typical characteristics specify mean values expected over the production spread. Data Sheet 6/11 2003-11-20 TLE4966H Timing diagrams for the speed and direction outputs A p p lie d m a g n e tic fie ld B OP B RP VQ tf td 90% tr td 10% Figure 3: Timing definition of the speed signal Figure 4: Timing Definition of the Direction Signal Data Sheet 7/11 2003-11-20 TLE4966H Figure 5: Definition of the Direction Signal Rotation Direction left to right right to left State of Direction Output VQ1 low high Package Dimensions 2.9 ±0.2 1.1 MAX. B (2.25) (0.35) 0.62 ±0.05 sensitive area 0.1 MAX. Center of sensitive area +0.1 -0.05 0.2 M 10° MAX. 1.6 ±0.1 0.35 10 ° MAX. +0.2 acc. to DIN 6784 2.6 MAX. 0.16 A B 0.15 B 6x 0.95 1.9 0.2 M +0.1 -0.06 A A Figure 6: Package Dimension Data Sheet 8/11 2003-11-20 TLE4966H Figure 7: Foot print Figure 8: Distance from Package to Die Data Sheet 9/11 2003-11-20 TLE4966H Figure 9: Marking Data Sheet 10/11 2003-11-20 TLE4966H TLE4966H Revision History: Version 1.0 Previous Version: Page Subjects (major changes since last revision) 2003-11-20 For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2001-02-22 Published by Infineon Technologies AG St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11/11 2003-11-20