TN0620 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) VGS(th) (max) 200V 6.0Ω 1.0A 1.6V Order Number / Package TO-92 TO-220 TN0620N3 TN0620N5 MIL visual screening available 7 Low Threshold DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Features ■ Low threshold — 1.6V max. ■ High input impedance ■ Low input capacitance — 110pF typical Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices Package Options Applications ■ Logic level interfaces – ideal for TTL and CMOS ■ Solid state relays ■ Battery operated systems ■ Photo voltaic drives ■ Analog switches ■ General purpose line drivers ■ Telecom switches Absolute Maximum Ratings G SGD Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-92 TO-220 TAB: DRAIN -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-55 D S TN0620 Thermal Characteristics Package ID (continuous)* ID (pulsed) θjc Power Dissipation @ TC = 25°C °C/W °C/W θja IDR* IDRM TO-92 0.4A 2.0A 1W 125 170 0.4A 2.0A TO-220 1.5A 2.5A 45W 2.7 70 1.5A 2.5A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 200 VGS(th) Gate Threshold Voltage 0.6 ∆VGS(th) Typ Max Unit Conditions V VGS = 0V, ID = 2.0mA 1.6 V VGS = VDS, ID = 1.0mA Change in VGS(th) with Temperature -5.0 mV/°C VGS = VDS, ID = 1.0mA IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating 1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ON-State Drain Current ID(ON) 0.5 1.0 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS 6.0 8.0 4.0 6.0 1.4 300 VGS = 10V, ID = 0.5A %/°C VGS = 10V, ID = 0.5A VDS = 25V, ID = 0.5A m 150 Common Source Output Capacitance 40 85 CRSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-OFF Delay Time 20 tf Fall Time 20 VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time VGS = 5V, ID = 0.25A Ω 400 110 VGS = 10V, VDS = 25V Ω Static Drain-to-Source ON-State Resistance RDS(ON) VGS = 5V, VDS = 25V A pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 1.0A RGEN = 25Ω 10 8 300 V VGS = 0V, ISD = 1.0A ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit RL 10V 90% INPUT 0V PULSE GENERATOR 10% t(ON) OUTPUT t(OFF) D.U.T. tr td(ON) VDD td(OFF) tF 50Ω 10% INPUT 10% OUTPUT 0V 90% 90% 7-56 TN0620 Typical Performance Curves Output Characteristics Saturation Characteristics 4.0 4.0 3.2 3.2 VGS = VGS = 2.4 ID (amperes) ID (amperes) 10V 8V 6V 1.6 4V 0.8 2V 0 10 20 30 40 10V 8V 6V 1.6 4V 0.8 3V 0 2.4 3V 2V 0 50 0 2 4 VDS (volts) 8 10 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 50 1.0 VDS = 25V TO-220 40 0.8 TA = -55°C 0.6 PD (watts) GFS (siemens) 6 VDS (volts) TA = 25°C 0.4 TA = 150°C 30 20 0.2 10 0 0 TO-39 TO-92 0 0.5 1.0 1.5 2.0 0 2.5 25 50 100 125 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 TO-220 (DC) ID (amperes) 75 TC (° C) ID (amperes) 1.0 TO-92 (DC) 0.1 0.8 TO-220 PD = 45W TC = 25°C 0.6 0.4 0.2 TO-92 PD = 1W TC = 25°C TC = 25°C 0.01 1 10 100 0 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 7-57 1 10 7 TN0620 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 15 1.1 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 12 1.0 VGS = 10V 9 6 3 0.9 0 -50 0 50 100 150 0 0.8 1.6 Tj (° C) 2.4 3.2 4.0 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 4.0 1.4 VDS = 25V VGS(th) (normalized) ID (amperes) TA = -55°C 2.4 TA = 25°C 1.6 V (th)@ 1mA 1.2 1.2 RDS @ 10V, 0.5A 1.0 0.8 0.8 0.4 0.8 TA = 150°C 0.6 0 0 2 4 6 8 -50 10 0 50 100 0 150 Tj (° C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 200 f = 1MHz VDS = 10V 8 VGS (volts) C (picofarads) 150 CISS 100 VDS = 40V 6 178 pF 4 COSS 50 2 100 pF CRSS 0 0 0 10 20 30 0 40 0.5 1.0 1.5 QG (nanocoulombs) VDS (volts) 7-58 2.0 2.5 RDS(ON) (normalized) 1.6 3.2