TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8061-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.5 nC (typ.) • Low drain-source ON-resistance: Unit: mm RDS (ON) = 21 mΩ (typ.) (VGS = 4.5 V) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 8 Pulsed (Note 1) IDP 32 PD 1.9 DC Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) A W 1.0 W EAS 42 mJ IAR 8 A EAR 0.21 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) 4:GATE JEDEC ― JEITA ― TOSHIBA 2-5R1A Weight: 0.085 g (typ.) PD (Note 2b) 1,2,3:SOURCE 5,6,7,8:DRAIN Note: For Notes 1 to 4, refer to the next page. Circuit Configuration 8 7 6 5 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-11-18 TPC8061-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) Part No. (or abbreviation code) TPC8061 H Lot No. Note Note : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = 8 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year: sequential number up to 52 or 53) Year of manufacture (The last digit of the year) 2 2009-11-18 TPC8061-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ Vth VDS = 10 V, ID = 0.1 mA 1.3 ⎯ 2.3 VGS = 4.5 V, ID = 4 A ⎯ 21 29 VGS = 10 V, ID = 4 A ⎯ 18 26 ⎯ 630 ⎯ ⎯ 46 ⎯ ⎯ 150 ⎯ ⎯ 1.4 ⎯ ⎯ 2.6 ⎯ ⎯ 7.6 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd Gate switch charge QSW VOUT 2.9 ⎯ ⎯ 18 ⎯ VDD ≈ 24 V, VGS = 10 V, ID = 8 A ⎯ 11 ⎯ VDD ≈ 24 V, VGS = 5 V, ID = 8 A ⎯ 6.2 ⎯ ⎯ 2.3 ⎯ ⎯ 2.5 ⎯ ⎯ 3.5 ⎯ VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs VDD ≈ 24 V, VGS = 10 V, ID = 8 A V mΩ pF Ω ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 4 A 10 V RL = 3.75Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 32 A ⎯ ⎯ −1.2 V VDSF IDR = 8 A, VGS = 0 V 3 2009-11-18 TPC8061-H 10 ID – VDS 4.5 4 Common source Ta = 25°C Pulse test 3.1 ID 6 2.8 2.7 2.6 2 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 3.1 12 2.9 8 2.7 4 VGS = 2.4 V VGS = 2.4 V 0 0 1 0 (V) 0.8 0.4 Ta = −55°C 25 1 2 3 4 Gate-source voltage VGS 0.3 0.2 ID = 8 A 0.1 2 0 5 4 0 (V) 2 4 8 VGS 10 (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse test Drain-source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance 6 Gate-source voltage ⎪Yfs⎪ – ID 100 Ta = −55°C 10 100 25 1 0.1 0.1 (V) Common source Ta = 25℃ Pulse test (V) VDS Drain-source voltage 100 1000 VDS 2 VDS – VGS (A) ID Drain current 5 0 1.6 0.4 Common source VDS = 10 V Pulse test 10 0 1.2 Drain-source voltage ID – VGS 15 Common source Ta = 25°C Pulse test 4.5 2.9 4 3.3 4 16 Drain current Drain current ID (A) 3 8 0 ID – VDS 8 6 5 20 (A) 8 6 5 10 1 Drain current 10 ID Common source Ta = 25 ℃ Pulse test 4.5 VGS = 10 V 10 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2009-11-18 TPC8061-H RDS (ON) – Ta IDR – VDS 40 100 IDR ID = 2, 4, 8 A 24 ID = 2, 4, 8 A VGS = 4.5 V 16 VGS = 10 V 8 0 −80 −40 Common source Ta = 25°C Pulse test (A) 32 Drain reverse current 0 40 Ambient temperature 80 120 Ta 10 10 1 VGS = 0 V 1 160 −0.2 0 (°C) −0.4 Capacitance – VDS (V) Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 80 120 VDS 1 Common source VDS = 10 V ID = 0.1 mA Pulse test 0.5 0 −80 100 10 1.5 −40 0.5 0 40 80 Ambient temperature 120 Ta 12 (V) Drain-source voltage (2) 1.0 (°C) 30 VDS (W) 1.5 Ta 160 Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) t=10s (1) 40 Ambient temperature (V) PD – Ta 2 0 VDS (°C) VGS 20 12 10 4 Common source ID = 8 A Ta = 25°C Pulse test 0 2 4 6 Total gate charge 5 8 VDD = 6 V 24 0 160 (V) 1 2 8 Qg 10 12 VGS (pF) Vth (V) Gate threshold voltage Ciss C Capacitance VDS −1.0 Vth – Ta 1000 Drain-source voltage PD −0.8 2.5 10 0.1 Drain power dissipation −0.6 Drain-source voltage 10000 0 4.5 3 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 0 (nC) 2009-11-18 TPC8061-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (s) Safe operating area 100 10 t = 1ms * 10ms * Drain current ID (A) ID max (Pulse) * 1 0.1 * Single – pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2009-11-18 TPC8061-H RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-11-18