TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8001-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • High speed switching 5 0.475 1 4 B 0.65 • Small gate charge: QSW = 3.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 16 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.05 M B 2.9±0.1 A 0.8±0.05 S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Maximum Ratings (Ta = 25°C) Characteristic 1．Source 5．Drain 2．Source 6．Drain 0.28 +0.1 -0.11 Symbol Rating Unit 3．Source 7．Drain Drain-source voltage VDSS 30 V 4．Gate 8．Drain Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V JEDEC ― Gate-source voltage VGSS ±20 V JEITA ― (Note 1) ID 7.2 IDP 28.8 A TOSHIBA Pulsed (Note 1) PD 1.68 W PD 0.84 W EAS 33.6 mJ IAR 7.2 A EAR 0.066 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) 2.8±0.1 Small footprint due to a small and thin package 0.05 M A 8 2.4±0.1 • Unit: mm 0.33±0.05 2-3V1K Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 6 5 Marking (Note 5) Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 8 7 8001H ※ 1 2 3 4 Lot No. 1 2006-05-29 TPCP8001-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 °C/W Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.2A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-05-29 TPCP8001-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 3.6 A ⎯ 19 25 VGS = 10 V, ID = 3.6 A ⎯ 13 16 VDS = 10 V, ID = 3.6 A 8 16 ⎯ ⎯ 640 ⎯ ⎯ 75 ⎯ ⎯ 300 ⎯ ⎯ 4 ⎯ ⎯ 8 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd 4 ⎯ VDD ∼ − 15 V < Duty = 1%, tw = 10 μs ⎯ 18 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 7.2 A ⎯ 11 ⎯ VDD ∼ − 24 V, VGS = 5 V, ID = 7.2 A ⎯ 6.3 ⎯ ⎯ 2.2 ⎯ ⎯ 2.6 ⎯ Gate switch charge QSW ⎯ 3.6 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 7.2 A V mΩ S pF ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 3.6 A VOUT 10 V RL =4.16Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 28.8 A ⎯ ⎯ −1.2 V VDSF IDR = 7.2 A, VGS = 0 V 3 2006-05-29 TPCP8001-H ID – VDS 10 3.3 3.2 3.4 10 3.1 4 Common source Ta = 25°C Pulse test 3.5 3.4 5 12 3.3 ID 4 ID (A) 3.5 6 ID – VDS 16 Common source Ta = 25°C Pulse test (A) 8 Drain current Drain current 3.0 4 2.9 VGS = 2.8 V 2 3.2 8 3.1 3.0 4 2.9 VGS = 2.8 V 0 0 0.4 0.8 1.2 1.6 Drain-source voltage VDS 2 0 2.4 0 (V) 0.8 0.4 (V) (V) Common source Ta = 25°C Pulse test 0.8 VDS (A) 12 8 Drain-source voltage ID Drain current 2.4 VDS – VGS 100°C 25°C Ta = −55°C 4 0 0 1 2 3 Gate-source voltage 4 VGS 0.6 ID = 7.2 A 0.4 3.6 0 5 1.8 0.2 0 (V) 2 4 Common source VDS = 10 V Pulse test Ta = −55°C 25°C 10 100°C 1 0.1 0.1 Drain current 10 ID VGS 10 (V) 100 (A) Common source Ta = 25°C Pulse test VGS = 4.5 V 10 10 1 1 8 RDS (ON) – ID 100 Drain-source ON-resistance RDS (ON) (mΩ) |Yfs| 100 6 Gate-source voltage ⎪Yfs⎪ – ID (S) 2 VDS 1 Common source VDS = 10 V Pulse test 16 Forward transfer admittance 1.6 Drain-source voltage ID – VGS 20 1.2 1 Drain current 4 100 10 ID (A) 2006-05-29 TPCP8001-H RDS (ON) – Ta IDR – VDS 100 30 IDR ID = 1.8,3.6,7.2 A 25 VGS = 4.5 V 20 15 ID = 1.8,3.6,7.2 A 10 10 V 5 0 −80 −40 0 40 Ambient temperature 80 120 Ta 10 3 10 4.5 1 VGS = 0 V 1 160 −0.2 0 (°C) −0.4 Capacitance – VDS Vth (V) Gate threshold voltage Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss VDS 0.5 80 120 Common source VDS = 10 V ID = 1 mA Pulse test 0 −80 100 10 1.0 −40 (V) 0 Ambient temperature (°C) 50 (V) 20 Common source ID = 7.2 A Ta = 25°C 40 Pulse test 16 VDS (1) Ta 160 Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) ｔ＝5s 1.6 40 (V) 1 1.5 Drain-source voltage 1.2 (2) 0.8 0.4 VDD = 6 V 30 12 VDS 12 V 24 V 20 8 10 4 0 50 100 Ambient temperature 150 Ta 0 200 4 8 Total gate charge (°C) 5 12 Qg 16 20 VGS (pF) C Capacitance Coss 100 2 (W) (V) 2.0 PD – Ta PD VDS −1.2 Vth – Ta Ciss Drain-source voltage Drain power dissipation −1.0 2.5 1000 0 0 −0.8 Drain-source voltage 10000 10 0.1 −0.6 Gate-source voltage 35 Common source Ta = 25°C Pulse test (A) Common source Pulse test Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) 40 0 (nC) 2006-05-29 TPCP8001-H rth (°C/W) rth – tw 1000 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) Transient thermal impedance 100 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 Drain current ID (A) ID max (Pulse) * t =1 ms * 10 10 ms * 1 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2006-05-29 TPCP8001-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-05-29