TOSHIBA TPCP8202_1

TPCP8202
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (U-MOSIV)
TPCP8202
Portable Equipment Applications
Motor Drive Applications
Unit: mm
0.33±0.05
DC-DC Converters
0.05 M A
5
Lead(Pb)-Free
•
Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 20 S (typ.)
•
Low leakage current: IDSS = 10 μA (max)(VDS = 30 V)
•
Enhancement model: Vth = 0.7 to 1.4V
0.475
1
4
B
0.65
2.9±0.1
2.8±0.1
•
2.4±0.1
8
0.05 M B
A
(VDS = 10 V, ID = 200 μA)
0.8±0.05
S
Absolute Maximum Ratings (Ta = 25°C)
0.025
S
0.28 +0.1
-0.11
0.17±0.02
+0.13
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±12
V
Drain current
DC
(Note 1)
ID
5.5
Pulse
(Note 1)
IDP
22
A
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
PD (1)
1.48
PD (2)
1.23
Single-device operation
(Note 3a)
PD (1)
0.58
PD (2)
0.36
EAS
7.86
mJ
Avalanche current
IAR
5.5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain power
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy
(Note 4)
1.12 +0.13
-0.12
1. Source1
5. Drain2
2. Gate1
6. Dain2
3. Source2
7. Drain1
4. Gate2
8. Drain1
0.28 +0.1
-0.11
JEDEC
⎯
JEITA
⎯
TOSHIBA
W
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
1.12 -0.12
8
7
6
5
1
2
3
4
Marking (Note 6)
8
7
6
5
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
8202
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
※
This transistor is an electrostatic-sensitive device. Handle with care.
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2
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Lot No.
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TPCP8202
Thermal Characteristics
Characteristic
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Thermal resistance,
(Note 3a)
channel to ambient
(t = 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Symbol
Max
Rth (ch-a) (1)
84.5
Rth (ch-a) (2)
101.6
Rth (ch-a) (1)
215.5
Rth (ch-a) (2)
347.2
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
25.4
25.4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
(a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 5.5 A
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
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TPCP8202
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
IGSS
Test Condition
VGS = ±10 V, VDS = 0 V
Min
Typ.
Max
Unit
⎯
⎯
±10
μA
μA
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = -12 V
15
⎯
⎯
Vth
VDS = 10 V, ID = 200 μA
0.7
⎯
1.4
RDS (ON)
VGS = 2.5 V, ID = 2.8 A
⎯
29
39
RDS (ON)
VGS = 4.0 V, ID = 2.8A
⎯
20
24
RDS (ON)
VGS = 4.5 V, ID = 2.8A
⎯
19
23
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.8A
10
20
⎯
Input capacitance
Ciss
⎯
2150
⎯
Reverse transfer capacitance
Crss
⎯
155
⎯
Output capacitance
Coss
⎯
165
⎯
⎯
10
⎯
⎯
20
⎯
Gate threshold voltage
Drain-source ON-resistance
Rise time
Turn-on time
tr
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS
ton
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
tf
toff
ID = 2.8 A
5V
0V
RL = 5.36Ω
Drain-source breakdown voltage
4.7 Ω
Drain cutoff current
VDD ≈ 15 V
Duty ≤ 1%, tw = 10 μs
Qg
Gate-source charge1
Qgs1
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 24 V, VGS = 5 V, ID = 5.5 A
V
V
mΩ
S
pF
ns
⎯
19
⎯
⎯
90
⎯
⎯
28
⎯
⎯
4
⎯
⎯
8
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
22
A
⎯
⎯
-1.2
V
VDSF
IDR = 5.5 A, VGS = 0 V
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TPCP8202
ID – VDS
4.0
5
2.0
ID – VDS
4.0
10
Common source
Ta = 25°C Single Pulse test
2.2
(A)
1.9
ID
2.3
3
1.8
2
1
0
Drain current
Drain current
ID
(A)
2.1
2.2
4
0.8
1.2
Drain−source voltage
1.6
VDS
2.1
2.0
6
1.9
4
1.8
1.7
VGS = 1.6 V
VGS = 1.6 V
0.4
8
2
1.7
0
Common source
Ta = 25°C Single Pulse test
2.3
2.5
0
2
0
1
(V)
2
VDS (V)
Drain−source voltage
(A)
ID
Drain current
4
100°C
2
25°C
Ta = −55°C
0
0.5
1.0
1.5
2.0
Gate−source voltage
VGS
2.5
1.6
1.2
0.8
1.4
0.4
0.0
3.0
0
(V)
2
4
Common source
VDS = 10 V
Single Pulse test
25°C
1
1
Drain current
10
ID
VGS
10
(V)
RDS (ON) – ID
100°C
0.1
0.1
8
6
Gate−source voltage
Drain−source ON-resistance
RDS (ON) (mΩ)
(S)
|Yfs|
Forward transfer admittance
10
5.5
2.8
ID= 11A
100
Ta = −55°C
(V)
Common source
Ta = 25°C
Single Pulse test
|Yfs| – ID
100
5
VDS – VGS
6
0
VDS
2.0
Common source
VDS = 10 V
Single Pulse test
8
4
Drain−source voltage
ID – VGS
10
3
VGS = 2.5 V
4.0
4.5
10
1
0.1
100
(A)
Common source
Ta = 25°C
Single Pulse test
1
Drain current
4
10
ID
100
(A)
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TPCP8202
RDS (ON) – Ta
IDR – VDS
10
5.5 A
40
IDR
2.8 A
4.0 V
VGS = 2.5 V
30
ID = 1.4 A
20
4.5 V
ID = 1.4,2.8,5.5 A
10
0
−80
−40
0
40
80
Ambient temperature
Ta
4
(A)
Common source
Single Pulse test
Drain reverse current
120
2
1
0.1
160
Common source
Ta = 25°C
Single Pulse test
− 0.2
0
− 0.4
C – VDS
Vth (V)
Ciss
1000
Gate threshold voltage
(V)
Coss
Crss
100
80
120
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−80
1
10
Drain−source voltage
VDS
Common source
VDS = 10 V
ID = 0.2 mA
Pulse test
−40
0
Ambient temperature
100
35
VDS (V)
Drain−source voltage
(W)
1.5
t=5s
(2)
1.0
(3)
0.5
(4)
40
80
160
120
Ambient temperature
Ta
200
7
Common source
ID = 5.5 A
30 Ta = 25°C
Pulse test
6
12V
25 VDS
5
5
4
VDD = 24V
15
3
10
2
5
1
0
4
8
12
16
20
Total gate charge
(°C)
VGS
6V
20
0
0
0
(°C)
Dynamic input/output
characteristics
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation
(Note 3a)
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual operation
(Note 3b)
(1)
Ta
160
(V)
PD – Ta
2.0
40
24
Qg
28
32
(V)
10
0.1
1.4
VGS
(pF)
VDS
−1
Vth – Ta
C
Capacitance
− 0.8
1.6
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
PD
− 0.6
Drain−source voltage
(°C)
10000
Drain power dissipation
VGS = 0 V
1
Gate−source voltage
Drain−source ON-resistance
RDS (ON) (mΩ)
50
0
36
(nC)
2008-03-21
TPCP8202
rth – tw
1000
(4)
Transient thermal impedance
rth
(°C/W)
Single pulse
(3)
(2)
(1)
100
10
Device mounted on a glass-epoxy board (a)
(1) Single-device operation
(2) Single-device value at dual operation
Device mounted on a glass-epoxy board (b)
(3) Single-device operation
(4) Single-device value at dual operation
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
(Note 2a)
(Note 3a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
1000
(s)
Safe operating area
Drain current
ID
(A)
100
ID max (pulse)*
1 ms*
10
10 ms*
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
VDSS max
0.1
0.1
1
Drain−source voltage
10
VDS
100
(V)
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TPCP8202
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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