TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools · Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) · High forward transfer admittance: |Yfs| = 11 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) · Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kW) VDGR 20 V Gate-source voltage VGSS ±12 V Drain current DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.1 Single-device operation (Note 3a) Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) A ― JEITA ― TOSHIBA W PD (2) 0.75 PD (1) 0.6 PD (2) 0.35 Single pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.075 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) JEDEC 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration W 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-20 TPCS8211 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 114 Rth (ch-a) (2) 167 Rth (ch-a) (1) 208 Rth (ch-a) (2) 357 Unit °C/W °C/W Marking (Note 6) Type S8211 ※ Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = 6 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-02-20 TPCS8211 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ¾ ¾ 10 mA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ¾ ¾ V (BR) DSX ID = 10 mA, VGS = -12 V 8 ¾ ¾ Vth VDS = 10 V, ID = 200 mA 0.5 ¾ 1.2 VGS = 2.0 V, ID = 4.2 A ¾ 26 45 VGS = 2.5 V, ID = 4.2 A ¾ 21 29 VGS = 4.0 V, ID = 4.8 A ¾ 16 24 VDS = 10 V, ID = 3.0 A 5.5 11 ¾ ¾ 1590 ¾ ¾ 180 ¾ ¾ 200 ¾ ¾ 6.4 ¾ ¾ 22 ¾ ¾ 10 ¾ ¾ 42 ¾ ¾ 20 ¾ ¾ 3.5 ¾ ¾ 4.5 ¾ Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Turn-OFF time Total gate charge (gate-source plus gate-drain) 4.7 W Switching time Fall time tf toff ID = 3 A 5V VGS 0V VDD ~ - 10 V VOUT RL = 3.3 W Drain-source breakdown voltage Duty < = 1%, tw = 10 ms Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ~ - 16 V, VGS = 5 V, ID = 6 A V V mW S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ¾ ¾ ¾ 24 A ¾ ¾ -1.2 V VDSF IDR = 6 A, VGS = 0 V 3 2003-02-20 TPCS8211 ID – VDS 5 Common source Ta = 25°C Pulse test 1.7 2 8 1.6 ID 3 1.5 Drain current (A) ID Drain current Common source Ta = 25°C Pulse test 4, 5 2 1.8 (A) 4 4, 5 ID – VDS 10 2 1 6 1.7 4 1.6 2 1.5 VGS = 1.4 V 0 0 0.4 0.8 1.2 Drain-source voltage 1.6 VDS VGS = 1.4 V 0 0 2.0 (V) 1 VDS 5 (V) 0.8 (V) Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test 0.6 VDS (A) 6 Drain-source voltage ID Drain current 4 VDS – VGS 8 4 100 0 0 3 Drain-source voltage ID – VGS 10 2 2 25 1 Ta = -55°C 2 3 Gate-source voltage 4 VGS 0.4 1.5 0.2 ID = 12 A 6 0 0 5 3 (V) 2 4 6 Gate-source voltage |Yfs| – ID 8 VGS 10 (V) RDS (ON) – ID 100 (S) 100 2.5 Drain-source ON resistance RDS (ON) (mW) Forward transfer admittance ïYfsï 25 Ta = -55°C 100 10 1 0.1 Common source VDS = 10 V Pulse test Ta = 25°C Pulse test 1 0.1 10 ID VGS = 4 V 10 Common source 1 Drain current 2 (A) 1 Drain current 4 10 ID (A) 2003-02-20 TPCS8211 RDS (ON) – Ta IDR – VDS 10 Common source VGS = 2 V 30 VGS = 2.5 V VGS = 4 V 10 1 3 (A) Drain reverse current IDR 0 VGS = -1 V 5 3 Common source Ta = 25°C ID = 1.5, 3, 6 A 0 -80 -40 0 40 Pulse test 80 120 1 0 160 0.2 Ambient temperature Ta (°C) 0.4 Drain-source voltage Gate threshold voltage Vth (V) (pF) Capacitance C 1000 Coss 100 Crss Common source Ta = 25°C VGS = 0 V f = 1 MHz 1 10 VDS 0.4 0.6 100 0.4 (V) (4) 100 120 160 150 16 Common source ID = 6 A Ta = 25°C Pulse test VDS 10 8 VGS VDS t = 10 s 50 80 Dynamic input/output characteristics 0.2 0 0 40 20 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (3) 0 (V) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) (2) -40 Ambient temperature Ta (°C) Drain-source voltage (W) PD Drain power dissipation 0.8 (1) (V) 0.8 PD – Ta 1.2 1.2 Common source VDS = 10 V ID = 200 mA Pulse test 1.2 0 -80 Drain-source voltage 1.0 VDS 1.6 Ciss 1 0.8 Vth – Ta Capacitance – VDS 10000 10 0.1 0.6 12 6 VDD = 16 V VGS 8 4 2 4 0 0 200 (V) Drain-source ON resistance RDS (ON) (mW) 40 20 5 10 Pulse test 50 8 16 24 Gate-source voltage 60 0 32 Total gate charge Qg (nC) Ambient temperature Ta (°C) 5 2003-02-20 TPCS8211 rth - tw 1000 Normalized transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) 500 ① Single-device operation (Note 3a) ② Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) ③ Single-device operation (Note 3a) ④ Single-device value at dual operation (Note 3b) (4) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 Single-device value at dual operation (Note 3b) 50 30 ID max (pulse) * Drain current ID (A) 10 1 ms * 10 ms * 5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 Drain-source voltage VDSS max 3 VDS 10 30 100 (V) 6 2003-02-20 TPCS8211 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2003-02-20