JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1. EMITTER 2.COLLECTOR 3.BASE 123 unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA ，IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA，IC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -10 μA Collector cut-off current ICEO VCE=-30 V , IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V , -10 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A Transition frequency f VCE= -5V, T IC=0 60 400 -0.5 IC=-0.1A 50 f = 10MHz MHz CLASSIFICATION OF h FE(1) Rank Range V R O Y GR 60-120 100-200 160-320 200-400 TO-126 PACKAGE OUTLINE DIMENSIONS D A A1 L1 E P φ L b1 b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 2.290TYP e 0.090TYP e1 4.480 4.680 0.176 0.184 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 φ 3.000 3.200 0.118 0.126