TSDF04040X/TSDF04040XR Vishay Semiconductors Dual - MOSMIC®– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. Typical Application Features 2 (TSDF04040X) 5 (TSDF04040XR) AGC Two AGC amplifiers in a single package RFC C G2 (common) C 1 G1 RF in AMP1 D 3 +5 V Easy Gate 1 switch-off with PNP switching transistors inside PLL RF out Integrated gate protection diodes C Low noise figure +5 V RG1 C 6 G1 RF in RG1 TY CW 1 High gain, very high forward transadmittance (40 mS typ.) AMP2 D 4 RF out Biasing network on chip C Improved cross modulation at gain reduction S (common) +5 V 6 +5 V RFC 5 5 (TSDF04040X) 2 (TSDF04040XR) High AGC-range with less steep slope 16607 4 6 TY WC7 2 3 TSDF04040X Marking: WC7 Plastic case (SOT 363) 1 = Gate 1 (amplifier 1), 2 = Gate 2, 3 = Drain (amplifier 1), 4 = Drain (amplifier 2), 5 = Source, 6 = Gate1 (amplifier 2) SMD package, reverse pinning possible CW 16608 1 5 4 W7C 2 3 16609 TSDF04040XR Marking: W7C Plastic case (SOT 363) 1 = Gate 1 (amplifier 1), 2 = Source, 3 = Drain (amplifier 1), 4 = Drain (amplifier 2), 5 = Gate 2, 6 = Gate1 (amplifier 2) T = Telefunken Y = Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001) CW = Calendar Week, is variable for number from 01 to 52 Number of Calendar Week is always indicating place of pin 1 Document Number 85090 Rev. 1, 12–Nov–01 www.vishay.com 1 (4) TSDF04040X/TSDF04040XR Vishay Semiconductors All of following data and characteristics are valid for operating either amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5) Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Tamb 60 °C Symbol VDS ID ±IG1/G2SM +VG1/±VG2SM -VG1SM Ptot TCh Tstg Value 8 30 10 6 1.5 200 150 –55 to +150 Unit V mA mA V V mW °C °C Maximum Thermal Resistance Tamb = 25°C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35µm Cu Symbol RthChA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage www.vishay.com 2 (4) Test Conditions ID = 10 µA, VG1S = VG2S = 0 Symbol V(BR)DSS Min. 12 +IG1S = 10 mA, VG2S = VDS = 0 +V(BR)G1SS ±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G2SS Typ. Max. Unit V 7 10 V 7 10 V +VG1S = 5 V, VG2S = VDS = 0 +IG1SS 20 nA ±VG2S = 5 V, VG1S = VDS = 0 ±IG2SS 20 nA 20 mA 1.3 V 1.4 V VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k IDSO 10 VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF) 0.5 VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 µA VG2S(OFF) 0.8 15 1.0 Document Number 85090 Rev. 1, 12–Nov–01 TSDF04040X/TSDF04040XR Vishay Semiconductors Electrical AC Characteristics VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k, ID = IDSO, f = 1 MHz, Tamb = 25°C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain Power gain AGC range Noise figure Noise figure Cross modulation Cross modulation Test Conditions GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3.3 mS, GL = 1 mS, f = 800 MHz Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Symbol y21s Cissg1 Crss Coss Gps Gps ∆Gps F F Xmod Min. 35 Xmod 100 18 Typ. 40 2.4 30 1.5 28 24 45 1 1.3 90 105 Max. 50 2.8 40 Unit mS pF fF pF dB dB dB dB dB dBµV dBµV Dimensions of TSDF04040X/TSDF04040XR in mm 14280 Document Number 85090 Rev. 1, 12–Nov–01 www.vishay.com 3 (4) TSDF04040X/TSDF04040XR Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 (4) Document Number 85090 Rev. 1, 12–Nov–01