S503TX/S503TXR/S503TXRW VISHAY Vishay Semiconductors MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Easy Gate 1 switch-off with PNP switching transistors inside PLL • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance (40 mS typ.) • Improved cross modulation at gain reduction • SMD package SOT-143R 4 3 1 2 SOT-343R 4 3 19216 Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. Typical Application Mechanical Data RFC C block AGC C block RF in VGG (VRG1) VDD(VDS) D G2 RF out G1 S C block RG1 13650 Typ: S503TX Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S503TXR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S503TXRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Parts Table Part Marking Package S503TX X03 SOT-143 S503TXR X8R SOT-143R S503TXRW WX8 SOT-343R Document Number 85078 Rev. 1.2, 30-Aug-04 www.vishay.com 1 S503TX/S503TXR/S503TXRW VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value VDS 8 V ID 30 mA ± IG1/G2SM 10 mA + VG1S 6 V - VG1S 1.5 V Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Unit ± VG2SM 6 V Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Symbol Value Unit RthChA 450 K/W Gate 2 - source voltage Total power dissipation Tamb ≤ 60 °C Maximum Thermal Resistance Parameter Channel ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min V(BR)DSS 12 Typ. Max Unit Drain - source breakdown voltage ID = 10 µA, VG1S = VG2S = 0 Gate 1 - source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 10 V nA V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 20 Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ ± IG2SS 20 nA 15 20 mA 1.3 V 1.0 1.4 V IDSO 10 Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF) 0.3 Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 = 56 kΩ, ID = 20 µA VG2S(OFF) 0.8 Remark on improving intermodulation behavior: By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = 5 V, VG2S = 4 V, ID = 13 mA, f = 1 MHz Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s| 35 40 50 mS Gate 1 input capacitance Cissg1 2.3 2.8 pF 40 Feedback capacitance Crss 30 Output capacitance Coss 1.4 www.vishay.com 2 fF pF Document Number 85078 Rev. 1.2, 30-Aug-04 S503TX/S503TXR/S503TXRW VISHAY Vishay Semiconductors Parameter Power gain Test condition Symbol GS = 2 mS, GL = 0.5 mS, f = 200 MHz Gps GS = 3,3 mS, GL = 1 mS, f = 800 MHz Gps ∆Gps Min Typ. Max Unit 30 dB 18 24 dB 40 45 dB AGC range VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB GS = 3.3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 dBµV 105 dBµV Package Dimensions in mm 96 12239 Document Number 85078 Rev. 1.2, 30-Aug-04 www.vishay.com 3 S503TX/S503TXR/S503TXRW VISHAY Vishay Semiconductors Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 2.6 (0.101) 2.4 (0.094) 0.9 (0.035) 0.75 (0.029) 3.0 (0.117) 2.8 (0.109) 0...0.1 (0...0.004) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 1.17 (0.046) 2.0 (0.078) 1.8 (0.070) ISO Method E 96 12240 Package Dimensions in mm 96 12238 www.vishay.com 4 Document Number 85078 Rev. 1.2, 30-Aug-04 S503TX/S503TXR/S503TXRW VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85078 Rev. 1.2, 30-Aug-04 www.vishay.com 5