S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 D G 13 581 94 9280 2 3 S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain S 12624 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Tamb ≤ 60 °C Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150 –55 to +150 Unit V mA mA mW °C °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Document Number 85045 Rev. 3, 20-Jan-99 Symbol RthChA Value 450 Unit K/W www.vishay.de • FaxBack +1-408-970-5600 1 (7) S525T Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate - source breakdown voltage Gate - source leakage current Drain current Gate - source cut-off voltage Test Conditions ID = 10 mA, –VGS = 4 V ±IGS = 10 mA, VDS = 0 ±VGS = 6 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 20 mA Symbol V(BR)DS ±V(BR)GSS ±IGSS IDSS –VGS(OFF) Min 20 7.5 Typ Max 12 50 14 2.5 5 Unit V V nA mA V Electrical AC Characteristics VDS = 10 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Feedback capacitance Output capacitance Noise figure Power gain Test Conditions GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz www.vishay.de • FaxBack +1-408-970-5600 2 (7) Symbol y21s Cissg1 Crss Coss F Gps Min 14 Typ 16 2.7 25 1.0 1.0 25 Max Unit mS pF fF pF dB dB Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 2.0 C oss – Output Capacitance ( pF ) P tot – Total Power Dissipation ( mW ) 300 250 200 150 100 50 1.5 1.0 0 0 20 40 60 80 0 0 100 120 140 160 Tamb – Ambient Temperature ( °C ) 96 12159 3 6 9 Figure 4. Output Capacitance vs. Drain Source Voltage 20 5 f=300MHz VGS= 0.6V 16 4 250MHz 0.4V Im ( y11 ) ( mS ) ID – Drain Current ( mA ) 12 VDS – Drain Source Voltage ( V ) 13614 Figure 1. Total Power Dissipation vs. Ambient Temperature VGS=0 ID=10mA f=1MHz 0.5 0.2V 12 0 8 –0.2V 4 200MHz 3 150MHz 2 100MHz 1 –0.4V VDS=10V ID=10mA f=50...300MHz 50MHz –0.6V 0 0 0 2 4 6 8 10 VDS – Drain Source Voltage ( V ) 13612 0 Figure 2. Drain Current vs. Drain Source Voltage 0.6 0.8 1.0 0.00 3.5 –0.01 3.0 Im ( y12) ( mS ) Cissg – Gate Input Capacitance ( pF ) 13613 0.4 Re (y11) ( mS ) Figure 5. Short Circuit Input Admittance 4.0 2.5 2.0 1.5 1.0 –1.5 –1.0 –0.5 0.0 0.5 VGS – Gate Source Voltage ( V ) Figure 3. Gate Input Capacitance vs. Gate Source Voltage Document Number 85045 Rev. 3, 20-Jan-99 VDS=10V ID=10mA f=50...300MHz 50MHz 100MHz –0.02 150MHz –0.03 200MHz –0.04 VDS=10V f=1MHz 0.5 0 –2.0 0.2 13615 250MHz f=300MHz 1.0 –0.05 –0.01 13616 –0.008 –0.006 –0.004 –0.002 0.000 Re (y12) ( mS ) Figure 6. Short Circuit Reverse Transfer Admittance www.vishay.de • FaxBack +1-408-970-5600 3 (7) S525T Vishay Telefunken 2.0 0 Im ( y21) ( mS ) –4 50MHz f=300MHz 1.5 100MHz Im ( y22) ( mS ) VDS=10V ID=10mA f=50...300MHz –2 150MHz 200MHz –6 250MHz 200MHz 1.0 150MHz 100MHz 0.5 f=300MHz –8 250MHz 50MHz –10 0 0 13617 VDS=10V ID=10mA f=50...300MHz 4 8 12 16 20 Re (y21) ( mS ) Figure 7. Short Circuit Forward Transfer Admittance www.vishay.de • FaxBack +1-408-970-5600 4 (7) 0 13618 0.1 0.2 0.3 0.4 0.5 Re (y22) ( mS ) Figure 8. Short Circuit Output Admittance Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken VDS = 10 V, ID = 10 mA , Z0 = 50 W S12 S11 j 90° 120° j0.5 60° j2 150° j0.2 150 ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ 0 0.2 0.5 1 2 5 30° 300 MHz j5 50 1 50 180° 0.004 0.008 0° 150 –j0.2 –j5 300 MHz –j0.5 –150° –30° –j2 –120° –j 13 554 –60° –90° 13 555 Figure 9. Figure 11. S21 S22 j 90° 120° 60° j0.5 150° 300 MHz j2 30° j0.2 150 50 180° 0.8 1.6 0° 0 j5 ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ 0.2 0.5 1 2 5 50 300 MHz –j0.2 –150° –j5 –30° –j0.5 –120° 13 556 –90° Figure 10. Document Number 85045 Rev. 3, 20-Jan-99 –j2 –60° 13 557 –j Figure 12. www.vishay.de • FaxBack +1-408-970-5600 5 (7) S525T Vishay Telefunken Dimensions in mm 12780 www.vishay.de • FaxBack +1-408-970-5600 6 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 7 (7)