VISHAY BF988

Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
•
•
•
•
•
•
•
•
•
3
Integrated gate protection diodes
High cross modulation performance
e3
Low noise figure
High gain
High AGC-range
Low feedback capacitance
Low input capacitance
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
4
2
1
G2
D
G1
S
Electrostatic sensitive device.
Observe precautions for handling.
13625
Applications
Input- and mixer stages especially VHF- and UHFtuners.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF988
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Part
Ordering Ccode
Marking
Package
BF988
BF988A
BF988
TO50
BF988A
BF988A
BF988
TO50
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Tamb ≤ 60 °C
Symbol
Value
VDS
12
Unit
V
ID
30
mA
± IG1/G2SM
10
mA
mW
Ptot
200
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Total power dissipation
Document Number 85007
Rev. 1.7, 11-Sep-08
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1
BF988
Not for new design, this product will be obsoleted soon
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Channel ambient
1)
Test condition
1)
Symbol
Value
Unit
RthChA
450
K/W
on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Min
Drain - source breakdown
voltage
Parameter
ID = 10 μA, - VG1S = - VG2S = 4 V
Test condition
Part
V(BR)DS
12
Typ.
Max
Unit
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
7
14
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
7
14
V
nA
V
Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
50
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
50
nA
10.5
mA
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V BF988A
Gate 1 - source cut-off voltage
VDS = 15 V, VG2S = 4 V,
ID = 20 μA
- VG1S(OFF)
2.5
V
Gate 2 - source cut-off voltage
VDS = 15 V, VG1S = 0, ID = 20 μA
- VG2S(OFF)
2.0
V
IDSS
4
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter
Test condition
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Feedback capacitance
Output capacitance
Power gain
Symbol
Min
Typ.
|y21s|
21
24
Max
Unit
mS
Cissg1
2.1
Cissg2
1.2
pF
Crss
25
fF
2.5
pF
Coss
1.05
pF
GS = 2 mS, GL = 0.5 mS,
f = 200 MHz
Gps
28
dB
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
Gps
16.5
20
dB
ΔGps
40
AGC range
VG2S = 4 to - 2 V, f = 800 MHz
Noise figure
GS = 2 mS, GL = 0.5 mS,
f = 200 MHz
F
1
dB
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
F
1.5
dB
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2
dB
Document Number 85007
Rev. 1.7, 11-Sep-08
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Common Emitter S-Parameters
VDS = 8 V, VG2S = 4 V, Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
ID/mA
f/MHz
S11
S21
LOG
MAG
ANG
ANG
100
-0.02
-7.8
6.01
200
300
-0.10
-15.3
-0.31
-22.8
400
-0.56
500
-0.87
600
10
15
S22
LOG
MAG
ANG
LOG
MAG
ANG
168.4
-56.27
83.0
-0.02
-3.6
5.87
156.3
5.69
144.2
-50.61
76.6
-0.06
-7.3
-47.70
70.9
-0.13
-10.6
-30.2
5.42
-37.3
5.17
132.9
-46.19
65.6
-0.20
-14.2
121.5
-45.46
60.6
-0.28
-1.26
-44.3
-17.5
4.85
110.6
-45.84
55.4
-0.36
700
-1.59
20.5
-50.9
4.54
100.4
-47.31
58.6
-0.43
-23.8
800
900
-2.04
-58.0
4.25
90.2
-48.19
63.3
-0.49
-26.8
-2.42
-64.4
4.02
80.6
-50.37
81.5
-0.52
-30.2
1000
-2.88
-71.4
3.78
70.8
-49.48
115.6
-0.54
-33.4
1100
-3.39
-78.3
3.42
60.5
47.92
131.7
-0.66
-36.8
1200
-3.94
-85.2
3.21
51.6
-44.65
153.0
-0.66
-40.1
1300
-4.46
-91.8
3.01
42.0
-41.76
159.8
-0.66
-43.9
100
-0.02
-8.3
7.84
168.5
-55.67
83.0
-0.04
-3.7
200
-0.11
-16.1
7.70
156.6
-50.01
76.4
-0.09
-7.4
300
-0.35
-24.0
7.49
144.8
-47.20
70.3
-0.16
-10.8
-14.3
deg
5
S12
LOG
MAG
deg
deg
deg
400
-0.62
-31.6
7.21
133.6
-45.60
65.1
-0.23
500
-0.97
-39.2
6.93
122.5
-44.88
60.0
-0.31
17.9
600
-1.39
-46.4
6.59
111.9
-45.25
54.5
-0.42
-20.9
700
-1.76
-53.2
6.27
101.9
-46.51
57.4
-0.48
-24.1
800
-2.25
-60.3
5.97
92.1
-47.19
61.4
-0.55
-27.3
900
-2.67
-67.1
5.71
82.8
-49.28
76.0
-0.58
-30.6
1000
-3.16
-74.1
5.46
73.3
-48.99
107.1
-0.60
-33.8
1100
-3.72
-81.1
5.07
63.3
-48.03
123.3
-0.73
-37.2
1200
-4.30
-88.0
4.85
54.6
-45.15
147.6
-0.73
-40.6
1300
-4.87
-94.4
4.63
45.4
-42.46
157.6
-0.73
-44.3
100
-0.01
-8.4
8.62
168.6
-55.26
83.0
-0.07
-3.7
200
-0.13
-16.4
8.46
156.8
-49.61
76.3
-0.12
-7.5
3000
-0.37
-24.5
8.26
145.2
-46.70
70.3
-0.20
-11.0
400
-0.66
-32.3
7.96
134.0
-45.10
64.9
-0.27
-14.4
500
-1.02
-39.8
7.66
122.9
-44.38
59.7
-0.36
-18.0
600
-1.47
-47.0
7.33
112.3
-44.65
54.3
-0.47
-20.9
700
-1.85
-54.1
6.98
102.6
-45.72
57.0
-0.53
-24.2
800
-2.36
-61.3
6.68
92.8
-46.29
60.0
-0.61
-27.4
900
-2.80
-67.9
6.42
83.7
-48.18
71.9
-0.64
-30.6
1000
-3.30
-75.0
6.15
74.3
-48.49
98.7
-0.66
-33.9
1100
3.89
-82.0
5.75
64.6
-47.93
114.8
-0.77
-37.3
1200
-4.49
-88.8
5.52
56.0
-45.75
141.2
-0.79
-40.8
1300
-5.06
-95.2
5.30
46.9
-43.05
153.4
-0.79
-44.5
Document Number 85007
Rev. 1.7, 11-Sep-08
www.vishay.com
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Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
200
150
100
50
3V
2V
16
1V
12
8
0
4
VG1S = - 1 V
0
0
20
40
60
0
- 0.6
80 100 120 140 160
Tamb - Ambient Temperature (°C)
12817
30
25
V G1S = 0.6 V
20
0.4 V
15
0.2 V
10
0
- 0.2 V
5
- 0.4 V
0
0
12812
2
4
6
8
10
VDS - Drain Source Voltage (V)
12813
Figure 2. Drain Current vs. Drain Source Voltage
20
ID - Drain Current (mA)
VDS = 8 V
16
3V
2V
6V
5V
1V
4V
12
8
0
4
0
- 0.8
12816
VG2S = - 1 V
- 0.4
0.0
0.4
0.8
1.2
VG1S - Gate 1 Source Voltage (V)
12814
Figure 3. Drain Current vs. Gate 1 Source Voltage
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0.2
0.6
1.0
1.4
2.8
2.4
V DS = 8 V
V G2S = 4 V
f = 1 MHz
2.0
1.6
1.2
0.8
0.4
0.0
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5
V G1S – Gate 1 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
Cissg2 – Gate 2 Input Capacitance ( pF )
V G2S = 4 V
- 0.2
VG2S - Gate 2 Source Voltage (V)
Figure 4. Drain Current vs. Gate 2 Source Voltage
Cissg1 – Gate 1 Input Capacitance ( pF )
Figure 1. Total Power Dissipation vs. Ambient Temperature
ID - Drain Current (mA)
5V
VDS = 8 V
96 12159
4
4V
20
250
ID - Drain Current (mA)
Ptot - Total Power Dissipation (mW)
300
2.8
2.4
V DS = 8 V
V G1S = 0
f = 1 MHz
2.0
1.6
1.2
0.8
0.4
0.0
–1
0
1
2
3
4
5
V G2S – Gate 2 Source Voltage ( V )
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Document Number 85007
Rev. 1.7, 11-Sep-08
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
20
Coss – Output Capacitance ( pF )
4.0
16
14
Im (y11) (ms)
3.2
2.4
1.6
10
6
2
100 MHz
0
4
6
8
10
12
V DS – Drain Source Voltage ( V )
0
10
0
- 20
- 0.2 V
- 30
-5
2
I D = 5 mA
- 15
10 mA
- 0.5
0.0
0.5
1.0
14
f = 100 MHz
400 MHz
700 MHz
- 25
- 30
1000 MHz
- 35
1.5
1300 MHz
0
4
8
12
16
20
24
28
32
Re (y21) (mS)
12821
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
12
20 mA
- 40
VG1S - Gate 1 Source Voltage (V)
12818
- 10
- 20
VG2S = - 0.8 V
- 50
- 1.0
10
V DS = 8 V
V G2S = 4 V
f = 100...1300 MHz
0
- 0.4 V
- 40
8
5
Im (y21) (ms)
0
6
Figure 10. Short Circuit Input Admittance
1V
- 10
4
Re (y11) (mS)
4V
3V
2V
f = 800 MHz
2
12820
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 11. Short Circuit Forward Transfer Admittance
32
9
VDS = 8 V
f = 1 MHz
28
VG2S = 4 V
7
Im (y22) (ms)
20
16
2V
12
8
f = 1300 MHz
8
3V
24
6
1000 MHz
5
700 MHz
4
3
400 MHz
2
1V
4
1
0
0
0
12819
V DS = 8 V
V G2S = 4 V
I D = 10 mA
f = 100...1300 MHz
400 MHz
4
2
- Transducer Gain (dB)
700 MHz
8
0.8
12815
S 21
1000 MHz
12
0.0
y21s - Forward Transadmittance (ms)
f = 1300 MHz
18
V G2S = 4 V
V G1S = 0
f = 1 MHz
4
8
12
16
20
24
28
ID - Drain Current (mA)
Figure 9. Forward Transadmittance vs. Drain Current
Document Number 85007
Rev. 1.7, 11-Sep-08
0
0.00
12822
100 MHz
0.25
0.50
V DS = 15 V
V G2S = 4 V
I D =10 mA
f = 100...1300 MHz
0.75
1.00
1.25
1.50
Re (y22) (mS)
Figure 12. Short Circuit Output Admittance
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Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
VDS = 8 V, ID = 10 mA, VG2S = 4 V, Z0 = 50 Ω
S11
S21
j
90 °
120 °
j0.5
j2
60 °
700
1000
400
150 °
j0.2
30 °
j5
1300 MHz
100
0
0.2
0.5
1
2
180 °
5
1
2
0°
100
- j0.2
- j5
1300 MHz
1000
- 150°
- j0.5
- 30°
- j2
- 120°
-j
12960
- 60°
- 90°
12962
Figure 15. Forward Transmission Coefficient
Figure 13. Input Reflection Coefficient
S12
S22
j
90 °
120 °
150 °
60 °
j0.5
30°
1000 300
1300 MHz
j0.2
100
180 °
0.04
0.08
j2
0
0°
j5
0.2
0.5
1
2
5
100
- j0.2
–150 °
- j5
–30°
1300 MHz
- j2
- j0.5
12961
–120 °
–60°
–90 °
Figure 14. Reverse Transmission Coefficient
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12963
-j
Figure 16. Output Reflection Coefficient
Document Number 85007
Rev. 1.7, 11-Sep-08
Not for new design, this product will be obsoleted soon
BF988
Vishay Semiconductors
Package Dimensions in mm
96 12242
Document Number 85007
Rev. 1.7, 11-Sep-08
www.vishay.com
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BF988
Not for new design, this product will be obsoleted soon
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
Document Number 85007
Rev. 1.7, 11-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1