VISHAY S849TR

S849T/S849TR
Vishay Telefunken
MOSMIC for TV–Tuner Prestage with 12 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RFC
C block
Low noise gain controlled input stages in UHF-and
VHF- tuner with 12 V supply voltage.
AGC
VDD
D
G2
RF out
RF in
G1
S
C block
C block
94 9296
Features
D
D
D
D
D Improved cross modulation at gain reduction
D High AGC-range
D SMD package
Integrated gate protection diodes
Low noise figure
High gain
Biasing network on chip
2
1
13 579
94 9279
3
1
4
S849T Marking: 849
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
95 10831
94 9278
4
3
S849TR Marking: 49R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
Value
VDS
16
ID
30
±IG1/G2SM
10
±VG1/G2SM
7.5
Ptot
200
TCh
150
Tstg
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Symbol
RthChA
Unit
K/W
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Document Number 85051
Rev. 3, 20-Jan-99
Value
450
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S849T/S849TR
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
Test Conditions
±IG1S = 10 mA, VG2S = VDS = 0
Symbol
Min
±V(BR)G1SS 8
±IG2S = 10 mA, VG1S = VDS = 0
±V(BR)G2SS
+VG1S = 6 V, VG2S = VDS = 0
–VG1S = 6 V, VG2S = VDS = 0
±VG2S = 6 V, VG1S = VDS = 0
Typ
8
+IG1SS
–IG1SS
±IG2SS
VDS = 12 V, VG1S = 0, VG2S = 6 V
VDS = 12 V, VG1S = nc, VG2S = 6 V
IDSS
IDSP
VDS = 12 V, VG1S = nc, ID = 200 mA
VG2S(OFF)
50
8
12
1.0
Max Unit
12
V
12
V
60
120
20
mA
mA
nA
500
16
mA
mA
V
Electrical AC Characteristics
VDS = 12 V, VG2S = 6 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power g
gain
AGC range
Noise figure
g
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 12 V, VG2S = 1 to 6 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Symbol Min
y21s 20
Cissg1
Crss
Coss
Gps
Gps
16.5
DGps 40
F
F
Typ
24
2.1
20
0.9
26
20
1
1.3
Max Unit
28 mS
2.5 pF
fF
pF
dB
dB
dB
dB
dB
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with VG1S < 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
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Document Number 85051
Rev. 3, 20-Jan-99
S849T/S849TR
Vishay Telefunken
Common Source S–Parameters
VDS = 12 V , VG2S = 6 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified
f/MHz
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
S11
LOG
ANG
MAG
dB
deg
–0.01
–3.9
–0.04
–7.6
–0.11
–11.5
–0.16
–15.1
–0.28
–19.1
–0.39
–22.4
–0.51
–26.0
–0.65
–29.4
–0.79
–32.7
–0.95
–35.8
–1.09
–39.0
–1.26
–42.2
–1.41
–45.1
–1.56
–48.3
–1.71
–50.9
–1.89
–53.6
–2.02
–56.7
–2.15
–59.5
–2.28
–62.3
–2.45
–65.1
–2.59
–67.8
–2.75
–70.5
–2.81
–73.3
–2.96
–75.7
–3.07
–78.7
–3.18
–81.4
Document Number 85051
Rev. 3, 20-Jan-99
S21
LOG
ANG
MAG
dB
deg
7.46
175.0
7.37
169.3
7.30
163.4
7.21
157.8
7.09
151.8
6.98
146.8
6.79
141.2
6.66
136.0
6.47
131.0
6.29
125.8
6.13
121.0
5.91
116.0
5.76
111.8
5.55
106.9
5.40
102.6
5.22
98.0
5.08
93.8
4.89
89.4
4.75
85.2
4.55
80.9
4.38
76.2
4.20
72.2
4.14
67.9
4.02
64.3
3.90
60.1
3.73
55.6
S12
LOG
ANG
MAG
dB
deg
–61.64
87.7
–55.58
85.2
–52.05
82.0
–49.78
79.5
–48.15
76.4
–46.79
75.0
–45.92
72.6
–45.15
70.9
–44.66
69.5
–44.28
67.8
–44.13
67.3
–44.04
68.0
–43.84
68.6
–43.97
69.2
–44.18
70.4
–44.54
73.2
–44.81
77.0
–45.03
83.4
–44.87
90.8
–44.59
95.7
–44.59
100.2
–44.54
108.4
–44.05
116.7
–43.33
125.5
–42.41
133.5
–41.13
139.3
S22
LOG
ANG
MAG
dB
deg
–0.17
–1.7
–0.20
–3.3
–0.22
–5.0
–0.25
–6.6
–0.26
–8.4
–0.31
–9.8
–0.34
–11.3
–0.38
–12.8
–0.44
–14.3
–0.48
–15.9
–0.53
–17.4
–0.59
–18.8
–0.63
–20.2
–0.65
–21.6
–0.72
–23.1
–0.76
–24.4
–0.80
–25.9
–0.85
–27.6
–0.90
–29.0
–0.96
–30.2
–1.07
–31.6
–1.11
–33.0
–1.13
–34.7
–1.15
–36.2
–1.18
–37.6
–1.26
–39.1
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S849T/S849TR
Vishay Telefunken
250
40
y21s – Forward Transadmittance ( mS )
Ptot – Total Power Dissipation ( mW )
Typical Characteristics (Tamb = 25_C unless otherwise specified)
200
150
100
50
VDS=12V
f=800MHz
30
20
10
0
0
0
25
50
75
100
150
125
Tamb – Ambient Temperature ( °C )
95 10759
0
Figure 1. Total Power Dissipation vs.
Ambient Temperature
VG2S=6V
12
5V
8
4V
2V
1V
0
0
2
4
6
8
10
2
1
VDS=12V
f=200MHz
0
1
2
3
4
6
5
VG2S – Gate 2 Source Voltage ( V )
95 10762
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
20
2.0
C oss – Output Capacitance ( pF )
ID – Drain Current ( mA )
6
5
0
Figure 2. Drain Current vs. Drain Source Voltage
16
VDS=12V
12
8
4
VG2S=6V
f=200MHz
1.5
1.0
0.5
0
0
0
95 10761
4
3
12
VDS – Drain Source Voltage ( V )
95 10760
3
4
C issg1 – Gate 1 Input Capacitance ( pF )
ID – Drain Current ( mA )
16
3V
2
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
20
4
1
VG2S – Gate 2 Source Voltage ( V )
95 10764
1
2
3
4
5
6
VG2S – Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
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6
15967
8
10
12
14
VDS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
Document Number 85051
Rev. 3, 20-Jan-99
S849T/S849TR
Vishay Telefunken
80
CM – Cross Modulation ( dB )
S 21
2
– Transducer Gain ( dB )
20
0
–20
–40
VDS=12V
f=800MHz
–60
40
20
VDS=12V
f=800MHz
0
0
95 10763
60
1
2
3
4
5
6
VG2S – Gate 2 Source Voltage ( V )
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
Document Number 85051
Rev. 3, 20-Jan-99
2
95 11138
3
4
5
6
VG2S – Gate 2 Source Voltage ( V )
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
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S849T/S849TR
Vishay Telefunken
VDS = 8 V, ID = 10 mA, VG2S = 4 V , Z0 = 50 W
S12
S11
j
90°
120°
j0.5
60°
j2
30°
j0.2
0
j5
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁ
0.2
0.5
1
2
5
300
–j0.2
1300MHz
1300MHz
50
1
550
300
50
180°
0.008
0.016
0°
–j5
800
–j0.5
1050
–150°
–30°
–j2
–120°
–j
12 948
–60°
–90°
12 949
Figure 9. Input reflection coefficient
Figure 11. Reverse transmission coefficient
S21
S22
j
90°
120°
800
60°
j0.5
550
j2
300
30°
1050
50
1300MHz
1.0
j0.2
2.0
0°
j5
ÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁ
ÁÁÁÁÁÁ
0
0.2
0.5
1
2
5
1
50
550
–j0.2
–150°
1050
–30°
1300MHz
–j0.5
–120°
12 950
–j5
–j2
–60°
–90°
Figure 10. Forward transmission coefficient
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12 951
–j
Figure 12. Output reflection coefficient
Document Number 85051
Rev. 3, 20-Jan-99
S849T/S849TR
Vishay Telefunken
Dimensions of S849T in mm
96 12240
Dimensions of S849TR in mm
96 12239
Document Number 85051
Rev. 3, 20-Jan-99
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S849T/S849TR
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85051
Rev. 3, 20-Jan-99