TSM2N7002 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω Features Advanced trench process technology No minority carrier storage time High density cell design for low on-resistance CMOS logic compatible input High input impedance No secondary breakdown High speed switching Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2N7002CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 V ID 115 mA IDM 800 mA PD 225 mW 1.8 MW/ C Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C o Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Unit TL 5 S Rθja 417 Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM2N7002 1-3 2003/12 rev. B o C/W Electrical Characteristics o Tj = 25 C unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 500mA RDS(ON) -- -- 7.5 Ω Drain-Source On-State Resistance VGS = 5V, ID = 50mA RDS(ON) -- -- 13.5 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.0 -- 2.5 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 20V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VDS ID(ON) 500 -- -- mA tr -- -- 20 tf -- -- 40 2V, VGS = 10V Dynamic Turn-On Rise Time Turn-Off Fall Time VDD = 25V, RL = 50Ω, ID = 500mA, VGEN = 10V, RG = 25Ω nS Input Capacitance VDS = 25V, VGS = 0V, Ciss -- 50 -- Output Capacitance f = 1.0MHz Coss -- 25 -- Crss -- 5 -- IS -- -- 115 mA VSD -- 1.3 1.5 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 115mA, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2N7002 2-3 2003/12 rev. B SOT-23 Mechanical Drawing A B F SOT-23 DIMENSION DIM E G D TSM2N7002 MILLIMETERS MIN MAX INCHES MIN MAX A 2.88 2.91 0.113 0.115 B C 0.39 1.78 0.42 2.03 0.015 0.070 0.017 0.080 D 0.51 0.61 0.020 0.024 E F 1.50 1.04 1.70 1.08 0.061 0.041 0.069 0.043 G 0.07 0.09 0.003 0.004 C 3-3 2003/12 rev. B