TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 4.4 General Description TO-251 (IPAK) The TSM5NB50 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● Low RDS(ON) 1.2Ω (Typ.) Low gate charge typical @ 12.4nC (Typ.) Low Crss typical @ 18pF (Typ.) Ordering Information Part No. Package Packing TSM5NB50CH C5G TO-251 75pcs / Tube TSM5NB50CP ROG TO-252 2.5Kpcs / 13” Reel TSM5NB50CZ C0 TO-220 50pcs / Tube TSM5NB50CI C0 ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V 4.4 A 2.4 A IDM 17.6 A EAS 100 mJ Tc = 25ºC Continuous Drain Current Tc = 100ºC Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature ID PTOT 54 33 TJ 70 W 150 TSTG ºC o -55 to +150 C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RӨJC RӨJA 1/9 Limit Unit IPAK/DPAK ITO-220 TO-220 2.3 3.8 1.78 o 62.5 o 83 62.5 C/W C/W Version: A12 TSM5NB50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.2A RDS(ON) -- 1.2 1.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 10V, ID = 2.2A gfs -- 3.5 -- S Total Gate Charge VDS = 300V, ID = 4.4A, Qg -- 12.4 -- Gate-Source Charge VGS = 10V Qgs -- 2.9 -- Gate-Drain Charge (Note 4,5) Qgd -- 5.5 -- Ciss -- 552 -- Coss -- 83 -- Crss -- 18 -- td(on) -- 12 -- tr -- 22 -- td(off) -- 33 -- tf -- 21 -- Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 4.4A, VDD = 300V, RG =25Ω (Note 4,5) nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 4.4 A Source Current (Pulse) the MOSFET ISM -- -- 16 A 0.9 1.5 V Diode Forward Voltage IS = 4.4A, VGS = 0V VSD -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=2.2A, L=40mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 2/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters 5/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters 6/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters 7/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters 8/9 Version: A12 TSM5NB50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: A12