TZA3026 SDH/SONET STM4/OC12 transimpedance amplifier Rev. 01 — 2 May 2005 Product data sheet 1. General description The TZA3026 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in STM4/OC12 fiber optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. It offers a current mirror of average photo current for RSSI monitoring to be used in SFF8472 compliant modules. The low noise characteristics makes it suitable for STM4/OC12 applications, but also for FTTx applications. 2. Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low equivalent input noise current, typically 67 nA (RMS) Wide dynamic range, typically 0.85 µA to 1.5 mA (p-p) Differential transimpedance of 14 kΩ (typical) Bandwidth from DC to 650 MHz (typical) Differential outputs On-chip AGC with possibility of external control Single supply voltage 3.3 V, range 2.9 V to 3.6 V Bias voltage for PIN diode Current output of average photo current for RSSI monitoring Identical ports available on both sides of die for easy bond layout and RF polarity selection 3. Applications ■ Digital fiber optic receiver modules in telecommunications transmission systems, in high speed data networks or in FTTx systems 4. Ordering information Table 1: Ordering information Type number TZA3026U Package Name Description Version - bare die, dimensions approximately 0.82 mm × 1.3 mm - TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 5. Block diagram CVCC VCC AGC 4 or 17 6 or 15 TZA3026 0.2 × IDREF IMON IDREF IDREF_MON 5 or 16 BIASING RDREF 300 Ω DREF 1 or 3 RIDREF_MON CDREF GAIN CONTROL DPHOTO PEAK DETECTOR single-ended to differential converter IPD output buffers 7 or 13 OUTQ IPHOTO 2 low noise amplifier 8 or 14 OUT 9, 10, 11, 12 GND 001aac617 Fig 1. Block diagram 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 2 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 6. Pinning information DREF IPHOTO DREF 6.1 Pinning 3 2 1 VCC 4 17 VCC IDREF_MON 5 16 IDREF_MON AGC 6 15 AGC TZA3026 OUTQ 7 14 OUT OUT 8 13 OUTQ GND 9 12 GND GND 10 11 GND 001aac618 Fig 2. Pad configuration 6.2 Pin description Table 2: Bonding pad description Bonding pad locations with respect to the center of the die (see Figure 10), X and Y are in µm. Symbol Pad X Y Type Description DREF 1 −493.6 140 output bias voltage output for PIN diode; connect cathode of PIN diode to pad 1 or pad 3 IPHOTO 2 −493.6 0 input current input; anode of PIN diode should be connected to this pad DREF 3 −493.6 −140 output bias voltage output for PIN diode; connect cathode of PIN diode to pad 1 or pad 3 VCC 4 −353.6 −278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17 IDREF_MON 5 −213.6 −278.6 output current output for RSSI measurements; connect a resistor to pad 5 or pad 16 and ground AGC 6 −73.6 −278.6 input AGC voltage; use pad 6 or pad 15 OUTQ 7 66.4 −278.6 output data output; complement of pad OUT; use pad 7 or pad 13 OUT 8 206.4 −278.6 output data output; use pad 8 or pad 14 [1] GND 9 346.4 −278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible GND 10 486.4 −278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 3 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier Table 2: Bonding pad description …continued Bonding pad locations with respect to the center of the die (see Figure 10), X and Y are in µm. Symbol Pad X Y Type Description GND 11 486.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible GND 12 346.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as possible OUTQ 13 206.4 278.6 output data output; complement of pad OUT; use pad 7 or pad 13 OUT 14 66.4 278.6 output data output; use pad 8 or pad 14 [1] AGC 15 −73.6 278.6 input AGC voltage; use pad 6 or pad 15 IDREF_MON 16 −213.6 278.6 output current output for RSSI measurements; connect a resistor to pad 5 or pad 16 and ground VCC 17 −353.6 278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17 [1] These pads go HIGH when current flows into pad IPHOTO. 7. Functional description The TZA3026 is a TransImpedance Amplifier (TIA) intended for use in fiber optic receivers for signal recovery in STM4/OC12 or FTTx applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. The most important characteristics of the TZA3026 are high receiver sensitivity, wide dynamic range and large bandwidth. Excellent receiver sensitivity is achieved by minimizing transimpedance amplifier noise. The TZA3026 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 0.85 µA to 1.5 mA (p-p). This is implemented by an AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not required. The bandwidth of TZA3026 is optimized for STM4/OC12 application. It works from DC onward due to the absence of offset control loops. Therefore the amount of Consecutive Identical Digits (CID) will not effect the output waveform. A differential amplifier converts the output of the preamplifier to a differential voltage. 7.1 PIN diode connections The performance of an optical receiver is largely determined by the combined effect of the transimpedance amplifier and the PIN diode. In particular, the method used to connect the PIN diode to the input (pad IPHOTO) and the layout around the input pad strongly influences the main parameters of a transimpedance amplifier, such as sensitivity, bandwidth, and PSRR. Sensitivity is most affected by the value of the total capacitance at the input pad. Therefore, to obtain the highest possible sensitivity the total capacitance should be as low as possible. 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 4 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier The parasitic capacitance can be minimized through: 1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN diode and typically a high reverse voltage. 2. Reducing the parasitics around the input pad. This is achieved by placing the PIN diode as close as possible to the TIA. The PIN diode can be biased with a positive or a negative voltage. Figure 3 shows the PIN diode biased positively, using the on-chip bias pad DREF. The voltage at DREF is derived from VCC by a low-pass filter comprising internal resistor RDREF and external capacitor C2 which decouples any supply voltage noise. The value of external capacitor C2 affects the value of PSRR and should have a minimum value of 470 pF. Increasing this value improves the value of PSRR. The current through RDREF is measured and sourced at pad IDREF_MON, see Section 7.3. If the biasing for the PIN diode is done external to the IC, pad DREF can be left unconnected. If a negative bias voltage is used, the configuration shown in Figure 4 can be used. In this configuration, the direction of the signal current is reversed to that shown in Figure 3. It is essential that in these applications, the PIN diode bias voltage is filtered to achieve the best sensitivity. For maximum freedom on bonding location, 2 outputs are available for DREF (pads 1 and 3). These are internally connected. Both outputs can be used if necessary. If only one is used, the other can be left open. VCC VCC 4 or 17 4 or 17 DREF 1 or 3 DREF 1 or 3 RDREF IPD RDREF 300 Ω 300 Ω C2 470 pF IPHOTO 2 IPHOTO 2 IPD TZA3026 TZA3026 001aac619 Fig 3. The PIN diode connected between the input and pad DREF 9397 750 14763 Product data sheet negative bias voltage 001aac620 Fig 4. The PIN diode connected between the input and a negative supply voltage © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 5 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 7.2 Automatic gain control The TZA3026 transimpedance amplifier can handle input currents from 0.85 µA to 1.5 mA which is equivalent to a dynamic range of 65 dB (electrical equivalent with 32.5 dB optical). At low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. At high input currents however, the transimpedance should be low to prevent excessive distortion at the output stage. To achieve the dynamic range, the gain of the amplifier depends on the level of the input signal. This is achieved in the TZA3026 by an AGC loop. The AGC loop comprises a peak detector and a gain control circuit. The peak detector detects the amplitude of the signal and stores it on a hold capacitor. The hold capacitor voltage is compared to a threshold voltage. The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level. When the AGC is inactive, the transimpedance is at its maximum. When the AGC is active, the feedback resistor value of the transimpedance amplifier is reduced, reducing its transimpedance, to keep the output voltage constant. Figure 5 shows the transimpedance as function of the input current. To reduce sensitivity to offsets and output loads, the AGC detector senses the output just before the output buffer. Figure 6 shows the AGC voltage as function of the input current. 001aac621 102 001aac622 4 VAGC (V) transimpedance (kΩ) 3 10 2 1 1 10−1 1 10 102 103 104 0 1 Fig 5. Transimpedance as function of the input current 102 103 104 Fig 6. AGC voltage as function of the input current 9397 750 14763 Product data sheet 10 IPD (µA) IPD (µA) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 6 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times. The AGC function can be overruled by applying a voltage to pad AGC. In this configuration, connecting pad AGC to ground gives maximum transimpedance and connecting it to VCC gives minimum transimpedance. This is depicted in Figure 7. The AGC voltage should be derived from the VCC for proper functioning. For maximum freedom on bonding location, 2 pads are available for AGC (pads 6 and 15). These pads are internally connected. Both pads can be used if necessary. 001aac623 102 transimpedance (kΩ) 10 1 10−1 0.3VCC 0.5VCC 0.7VCC 0.9VCC VAGC (V) Fig 7. Transimpedance as function of the AGC voltage 7.3 Monitoring RSSI via IDREF_MON To facilitate RSSI monitoring in modules (e.g. SFF8472 compliant SFP modules), a current output is provided. This output gives a current which is 20 % of the average DREF current through the 300 Ω bias resistor. By connecting a resistor to the IDREF_MON output, a voltage proportional with the average input power can be obtained. The RSSI monitoring is implemented by measuring the voltage over the 300 Ω bias resistor. This method is preferred over simple current mirror because at small photo currents the voltage drop over the resistor is very small. This gives a higher bias voltage yielding better performance of the photodiode. For maximum freedom on bonding location, 2 pads are available for IDREF_MON (pads 5 and 16). These pads are internally connected. Both pads can be used if necessary. If only one is used, the other can be left open. 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 7 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 8. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCC supply voltage Vn pad DC voltage In Min Max Unit −0.5 +3.8 V IPHOTO −0.5 +2.0 V OUT, OUTQ −0.5 VCC + 0.5 V AGC, IDREF_MON −0.5 VCC + 0.5 V DREF −0.5 VCC + 0.5 V IPHOTO −4.0 +4.0 mA OUT, OUTQ −10 +10 mA AGC, IDREF_MON −0.2 +0.2 mA DREF −4.0 +4.0 mA pad pad DC current pad Ptot total power dissipation - 300 mW Tamb ambient temperature −40 +85 °C Tj junction temperature - 150 °C Tstg storage temperature −65 +150 °C 9. Characteristics Table 4: Characteristics Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol Parameter VCC supply voltage ICC supply current Ptot Tj Min Typ Max Unit 2.9 3.3 3.6 V - 18 21 mA total power dissipation - 60 76 mW junction temperature −40 - +125 °C Tamb ambient temperature −40 +25 +85 °C Rtr small-signal transresistance of the receiver 9.5 14 19 kΩ f-3dB(h) high frequency −3 dB point CPD = 0.7 pF; VCC = 3.3 V 440 650 - MHz - 67 79 nA - 14 - µs In(tot)(rms) Conditions AC-coupled; RL(dif) = 100 Ω; excluding IDREF and IIDREF_MON measured differentially; AC-coupled, RL(dif) = 100 Ω total integrated RMS noise referenced to input; current over bandwidth CPD = 0.7 pF; ∆fi = 450 MHz third-order Bessel filter [1] Automatic gain control loop: pad AGC tatt attack time AGC pad unconnected tdecay decay time AGC pad unconnected - 40 - µs VO(data)(p-p) data output voltage (peak-to-peak value) referenced to output; measured differentially - 125 - mV 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 8 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier Table 4: Characteristics …continued Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit tested at DC level; Tamb = 25 °C 250 300 350 Ω - 0.33 - Ω/°C −1500 - +1500 µA 700 850 1000 mV 0 - VCC − 0.4 V Bias voltage: pad DREF RDREF resistance between pad DREF and pad VCC TCRDREF temperature coefficient RDREF Input: pad IPHOTO IPD(p-p) input current (peak-to-peak value) Vbias input bias voltage [2] Monitor: pad IDREF_MON [1] VMON monitor voltage AMON monitor current ratio ratio IDREF_MON / IDREF 19.5 20 20.5 % IMON(offset) monitor offset current Tamb = 25 °C 0 10 20 µA TCMON(offset) temperature coefficient monitor offset current - 30 - nA/°C - VCC − 1.2 - V IPD = 0.84 µA (p-p) × Rtr 8 12 - mV IPD = 100 µA (p-p) - 125 - mV IPD = 1500 µA (p-p) Data outputs: pads OUT and OUTQ Vo(cm) common mode output voltage AC-coupled; RL(dif) = 100 Ω Vo(dif)(p-p) differential load output voltage (peak-to-peak value) AC-coupled; RL(dif) = 100 Ω - 250 500 mV RO(dif) differential output resistance tested at DC level - 100 - Ω tr rise time 20 % to 80 %; IPD = 100 µA(p-p) - 300 - ps tf fall time 80 % to 20 %; IPD = 100 µA (p-p) - 300 - ps [1] Guaranteed by design. [2] The input current range is determined by the allowed Pulse Width Distortion (PWD), which is <5 % over the whole input current range. pulse width The PWD is defined as: PWD = ------------------------------- – ( 0.5 ) × 100 % , where T is the clock period. T 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 9 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 10. Application information For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ. The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is internally connected with pad 14, pad 7 is internally connected with pad 13. The device is guaranteed with only one pair used. The other pair should be left open. Two examples of the bonding possibilities are shown in Figure 8. VCC IDREF_MON VCC IDREF_MON C C PIN PIN C C OUT TZA3026U OUTQ OUTQ GND TZA3026U OUT GND 001aac624 001aac625 Fig 8. Application diagram highlighting flexible pad lay out 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 10 of 15 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x Philips Semiconductors 11. Test information 9397 750 14763 Product data sheet NETWORK ANALYZER S-PARAMETER TEST SET PORT1 PORT2 ZO = 50 Ω ZO = 50 Ω Rev. 01 — 2 May 2005 VCC SAMPLING OSCILLOSCOPE DC-IN 4 or 17 8 or 14 CLOCK R 55 Ω IPHOTO 2 7 or 13 TRIGGER INPUT ZO = 50 Ω TZA3026 330 Ω 2 OUTQ 22 nF 9, 10, 11, 12 GND Total impedance of the test circuit (ZT) is calculated by the equation ZT = s21 × (R + ZIN) × 2, where s21 is the insertion loss of ports 1 and 2. Typical values: R = 330 Ω, ZIN = 75 Ω. Fig 9. Test circuit TZA3026 11 of 15 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 001aac626 SDH/SONET STM4/OC12 transimpedance amplifier PATTERN GENERATOR DATA 22 nF 1 8.2 kΩ 22 nF OUT TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 12. Bare die information 17 16 15 1 14 13 12 11 8 9 10 Y (0,0) X 2 3 4 5 6 7 001aac627 Origin is center of die. Fig 10. Bonding pad locations Table 5: Physical characteristics of the bare die Parameter Value Glass passivation 0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm silicon nitride Bonding pad dimension minimum dimension of exposed metallization is 90 µm × 90 µm (pad size = 100 µm × 100 µm) except pads 2 and 3 which have exposed metallization of 80 µm × 80 µm (pad size = 90 µm × 90 µm) Metallization 2.8 µm AlCu Thickness 380 µm nominal Die dimension 820 µm × 1300 µm (± 20 µm2) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature <440 °C; recommended die attach is glue Attach time <15 s 13. Package outline Not applicable. 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 12 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 14. Handling information 14.1 General Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be completely safe, it is desirable to take normal precautions appropriate to handling MOS devices; see JESD625-A and/or IEC61340-5. 14.2 Additional information Pad IPHOTO has limited protection to ensure good RF performance. This pad should be handled with extreme care. 15. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes TZA3026_1 20050502 Product data sheet - 9397 750 14763 - 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 13 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 16. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 17. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 18. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Bare die — All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used. 19. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 20. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14763 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 2 May 2005 14 of 15 TZA3026 Philips Semiconductors SDH/SONET STM4/OC12 transimpedance amplifier 21. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 8 9 10 11 12 13 14 14.1 14.2 15 16 17 18 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 PIN diode connections . . . . . . . . . . . . . . . . . . . 4 Automatic gain control . . . . . . . . . . . . . . . . . . . 6 Monitoring RSSI via IDREF_MON . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application information. . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Bare die information . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 13 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Additional information . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information . . . . . . . . . . . . . . . . . . . . 14 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 May 2005 Document number: 9397 750 14763 Published in The Netherlands