PHILIPS TZA3043

INTEGRATED CIRCUITS
DATA SHEET
TZA3043; TZA3043B
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
Product specification
Supersedes data of 1998 Jul 08
File under Integrated Circuits, IC19
2000 Mar 28
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
FEATURES
APPLICATIONS
• Wide dynamic range, typically 2.5 µA to 1.5 mA
• Digital fibre optic receiver in medium and long haul
optical telecommunications transmission systems or in
high speed data networks
• Low equivalent input noise, typically 5.7 pA/√Hz
• Differential transimpedance of 8.3 kΩ
• Wideband RF gain block.
• Wide bandwidth from DC to 950 MHz
• Differential outputs
GENERAL DESCRIPTION
• On-chip Automatic Gain Control (AGC)
The TZA3043 is a high speed transimpedance amplifier
with AGC designed to be used in Gigabit Ethernet/Fibre
Channel optical links. It amplifies the current generated by
a photo detector (PIN diode or avalanche photodiode) and
converts it to a differential output voltage.
• No external components required
• Single supply voltage from 3.0 to 5.5 V
• Bias voltage for PIN diode
• Pin compatible with TZA3023 and SA5223
• Switched output polarity available (B-version).
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
TZA3043T
SO8
TZA3043U
−
TZA3043BT
SO8
TZA3043BU
−
2000 Mar 28
DESCRIPTION
plastic small outline package; 8 leads; body width 3.9 mm
bare die in waffle pack carriers; die dimensions 1.030 × 1.300 mm
plastic small outline package; 8 leads; body width 3.9 mm
bare die in waffle pack carriers; die dimensions 1.030 × 1.300 mm
2
VERSION
SOT96-1
−
SOT96-1
−
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
BLOCK DIAGRAM
AGC(1)
handbook, full pagewidth
(13)
VCC
1 nF
VCC
125 Ω
DREF 1 (1) 125 Ω
8 (11, 12)
GAIN
CONTROL
peak detector
10 pF
IPhoto 3 (4)
(10) 7
A1
A2
low noise
amplifier
TZA3043T
TZA3043U
(9) 6
OUTQ
OUT
single-ended to
differential converter
BIASING
2, 4, 5 (2, 3, 5, 6, 7, 8)
MGU096
GND
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O (pad 13) is only available on the TZA3043U.
Fig.1 Block diagram of TZA3043T and TZA3043U.
AGC(1)
handbook, full pagewidth
(13)
VCC
1 nF
VCC
125 Ω
DREF 1 (1) 125 Ω
8 (11, 12)
GAIN
CONTROL
peak detector
10 pF
IPhoto 3 (4)
(9) 6
A1
A2
low noise
amplifier
TZA3043BT
TZA3043BU
(10) 7
single-ended to
differential converter
BIASING
2, 4, 5 (2, 3, 5, 6, 7, 8)
MGU097
GND
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O (pad 13) is only available on the TZA3043BU.
Fig.2 Block diagram of TZA3043BT and TZA3043BU.
2000 Mar 28
3
OUTQ
OUT
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PINNING
PIN
TZA3043T
PIN
TZA3043BT
PAD
TZA3043U
PAD
TZA3043BU
DREF
1
1
1
1
analog
output
bias voltage for PIN diode; cathode
should be connected to this pin
GND
2
2
2, 3
2, 3
ground
ground
IPhoto
3
3
4
4
analog
input
current input; anode of PIN diode
should be connected to this pin;
DC bias level of 822 mV is one diode
voltage above ground
GND
4
4
5, 6
5, 6
ground
ground
GND
5
5
7, 8
7, 8
ground
ground
OUT
6
7
9
10
data
output
data output; pin OUT goes HIGH
when current flows into pin IPhoto
OUTQ
7
6
10
9
data
output
compliment of pin OUT
VCC
8
8
11, 12
11, 12
supply
supply voltage
AGC
−
−
13
13
input/
output
AGC analog I/O
SYMBOL
handbook, halfpage
TYPE
DESCRIPTION
handbook, halfpage
8 VCC
DREF 1
GND 2
7
OUTQ
GND 2
TZA3043T
IPhoto
3
GND
4
7
OUT
6
OUTQ
5
GND
TZA3043BT
6
OUT
IPhoto
3
5
GND
GND
4
MGR287
MGU098
Fig.3 Pin configuration of TZA3043T.
2000 Mar 28
8 VCC
DREF 1
Fig.4 Pin configuration of TZA3043BT.
4
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
FUNCTIONAL DESCRIPTION
The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC.
The TZA3043 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in Fibre Channel
or Gigabit Ethernet applications. It amplifies the current
generated by a photo detector (PIN diode or avalanche
photodiode) and transforms it into a differential output
voltage. The most important characteristics of the
TZA3043 are high receiver sensitivity and wide dynamic
range. High receiver sensitivity is achieved by minimizing
noise in the transimpedance amplifier.
AGC monitoring
The AGC voltage can be monitored at pad 13 on the bare
die (TZA3043U/TZA3043BU). Pad 13 is not bonded in the
packaged device (TZA3043T/TZA3043BT). This pad can
be left unconnected during normal operation. It can also be
used to force an external AGC voltage. If pad 13 (AGC) is
connected to GND, the internal AGC loop is disabled and
the receiver gain is at a maximum. The maximum input
current is then approximately 75 µA.
Input circuit
The signal current generated by a PIN diode can vary
between 2.5 µA to 1.5 mA (p-p).
Output circuit
A differential amplifier converts the output of the
preamplifier to a differential voltage (see Fig.5).
An AGC loop is implemented to make it possible to handle
such a wide dynamic range. The AGC loop increases the
dynamic range of the receiver by reducing the feedback
resistance of the preamplifier.
handbook, full pagewidth
The logic level symbol definitions for the differential
outputs are shown in Fig.6.
VCC
800 Ω
800 Ω
30 Ω
OUTQ
30 Ω
OUT
4.5 mA
4.5 mA
2 mA
MGR290
Fig.5 Differential data output circuit.
VCC
handbook, full pagewidth
VO(max)
VOQH
VOH
Vo(p-p)
VOQL
VOL
VOO
VO(min)
MGR243
Fig.6 Logic level symbol definitions for data outputs OUT and OUTQ.
2000 Mar 28
5
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
The reverse voltage across the PIN diode is 4.18 V
(5 − 0.82 V) for 5 V supply or 2.48 V (3.3 − 0.82 V) for
3.3 V supply.
PIN diode bias voltage DREF
The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, the bandwidth and the
Power Supply Rejection Ratio (PSRR) of a
transimpedance amplifier. The total capacitance at the
input pin is critical to obtain the highest sensitivity. It should
be kept to a minimum by reducing the capacitance of the
PIN diode and the parasitics around the input pin. The
PIN diode should be placed very close to the IC to reduce
the parasitics. Because the capacitance of the PIN diode
depends on the reverse voltage across it, the reverse
voltage should be chosen as high as possible.
It is preferable to connect the cathode of the PIN diode to
a higher voltage then VCC when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected. When a negative supply voltage is available,
the configuration in Fig.8 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to the Fig.7. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.
The PIN diode can be connected to the input in two ways
as shown in Figs 7 and 8. In Fig.7 the PIN diode is
connected between pins DREF and IPhoto. Pin DREF
provides an easy bias voltage for the PIN diode. The
voltage at DREF is derived from VCC by a low-pass filter.
The low-pass filter consisting of the internal resistors
R1, R2, C1 and the external capacitor C2 rejects the
supply voltage noise. The external capacitor C2 should be
equal or larger then 1 nF for a high PSRR.
VCC
R2
DREF 1 125 Ω
C2
1 nF
R1
125 Ω
VCC
8
R2
DREF 1 125 Ω
C1
10 pF
Ii
R1
125 Ω
8
C1
10 pF
IPhoto 3
3
IPhoto
Ii
TZA3043
TZA3043
MGU103
MGU104
negative supply voltage
Fig.7
Fig.8
The PIN diode connected between the input
and pin DREF.
2000 Mar 28
6
The PIN diode connected between the input
and a negative supply voltage.
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
AGC
It is disabled for smaller signals. The transimpedance is
then at its maximum value (8.3 kΩ differential).
The TZA3043 transimpedance amplifier can handle input
currents from 1 µA to 1.5 mA. This means a dynamic
range of 63 dB. At low input currents, the transimpedance
must be high to get enough output voltage, and the noise
should be low enough to guaranty minimum bit error rate.
At high input currents however, the transimpedance
should be low to avoid pulse width distortion. This means
that the gain of the amplifier has to vary depending on the
input signal level to handle such a wide dynamic range.
This is achieved in the TZA3043 by implementing an
Automatic Gain Control (AGC) loop. The AGC loop
consists of a peak detector, a hold capacitor and a gain
control circuit.
When AGC is active, the feedback resistor of the
transimpedance amplifier is reduced to keep the output
voltage constant. The transimpedance is regulated from
8.3 kΩ at low currents (I < 30 µA) to 1 kΩ at high currents
(I < 500 µA). Above 500 µA the transimpedance is at its
minimum and can not be reduced further but the front-end
remains linear until input currents of 1.5 mA.
The upper part of Fig.9 shows the output voltages of the
TZA3043 (OUT and OUTQ) as a function of the DC input
current. In the lower part, the difference of both voltages is
shown. It can be seen from the figure that the output
changes linearly up to 25 µA input current where AGC
becomes active. From this point on, AGC tries to keep the
differential output voltage constant around 200 mV for
medium range input currents (input currents <200 µA).
The AGC can not regulate any more above 500 µA input
current and the output voltage rises again with the input
current.
The peak amplitude of the signal is detected by the peak
detector and it is stored on the hold capacitor. The voltage
over the hold capacitor is compared to a threshold level.
The threshold level is set to 25 µA (p-p) input current. AGC
becomes active only for input signals larger than the
threshold level.
MGU105
3.9
handbook,
V full pagewidth
o
(V)
VOUT
3.7
3.5
VCC = 5 V
3.3
VOUTQ
3.1
600
Vo(dif)
(mV)
(1)
400
(2)
(3)
200
0
1
10
102
Vo(dif) = VOUT − VOUTQ.
(1) VCC = 3 V.
(2) VCC = 3.3 V.
(3) VCC = 5 V.
Fig.9 AGC characteristics.
2000 Mar 28
7
103
Ii (µA)
104
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MAX.
UNIT
−0.5
+6
pin/pad IPhoto
−0.5
+1
V
pins/pads OUT and OUTQ
−0.5
VCC + 0.5
V
pad AGC (bare die only)
−0.5
VCC + 0.5
V
pin/pad DREF
−0.5
VCC + 0.5
V
pin/pad IPhoto
−2.5
+2.5
mA
pins/pads OUT and OUTQ
−15
+15
mA
pad AGC (bare die only)
−0.2
+0.2
mA
pin/pad DREF
−2.5
+2.5
mA
300
mW
VCC
supply voltage
Vn
DC voltage
In
MIN.
V
DC current
Ptot
total power dissipation
−
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−40
+85
°C
HANDLING
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the VCC and GND pads first, the
remaining pads may then be bonded to their external connections in any order.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
2000 Mar 28
PARAMETER
thermal resistance from junction to ambient
8
VALUE
UNIT
160
K/W
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
CHARACTERISTICS
Typical values at Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
3
5
5.5
V
ICC
supply current
AC coupled; RL = 50 Ω
−
34
47
mA
Ptot
total power dissipation
VCC = 5 V
−
170
259
mW
VCC = 3.3 V
−
112
169
mW
Tj
junction temperature
−40
−
+125
°C
Tamb
ambient temperature
−40
+25
+85
°C
Rtr
small-signal transresistance of measured differentially;
the receiver
AC coupled
RL = ∞
13.2
16.6
20
kΩ
RL = 50 Ω
6.6
8.3
10
kΩ
f−3dB(h)
PSRR
high frequency −3 dB point
power supply rejection ratio
VCC = 5 V; Ci = 0.7 pF
1000
1200
−
MHz
VCC = 3.3 V; Ci = 0.7 pF
850
1100
−
MHz
f = 1 to 100 MHz
−
2
−
µA/V
f = 1 GHz
−
66
−
µA/V
210
250
290
Ω
600
822
1000
mV
VCC = 5 V; note 2
−1500
+6
+1500
µA
VCC = 3.3 V; note 2
−1000
+6
+1000
µA
measured differentially;
note 1
Bias voltage: pin DREF
RDREF
resistance between DREF and tested at DC
VCC
Input: pin IPhoto
Vbias(IPhoto)
input bias voltage on
pin IPhoto
Ii(IPhoto)(p-p)
input current on pin IPhoto
(peak-to-peak value)
Ri
small-signal input resistance
fi = 1 MHz; input current
<2 µA (p-p)
−
28
−
Ω
In(tot)
total integrated RMS noise
current over bandwidth
referenced to input;
∆f = 920 MHz; note 3
−
200
−
nA
2000 Mar 28
9
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
SYMBOL
PARAMETER
TZA3043; TZA3043B
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Data outputs: pins OUT and OUTQ
Vo(cm)
common mode output voltage
AC coupled; RL = 50 Ω
Vo(se)(p-p)
single-ended output voltage
(peak-to-peak value)
AC coupled; RL = 50 Ω;
75
input current 100 µA (p-p)
VCC − 2
VOO
differential output offset
voltage
Ro
output resistance
single-ended; DC tested
50
62
Ω
tr, tf
rise time, fall time
VCC = 5 V; 20% to 80%;
−
input current <20 µA (p-p)
285
430
ps
VCC = 3.3 V; 20% to 80%; −
input current <20 µA (p-p)
300
460
ps
−
25
−
µA
−100
40
VCC − 1.7 VCC − 1.4 V
200
330
mV
−
+100
mV
Automatic gain control loop: pad AGC
Ith(AGC)
AGC threshold current
tatt(AGC)
AGC attack time
−
5
−
µs
tdecay(AGC)
AGC decay time
−
10
−
ms
referenced to the peak
input current; tested at
10 MHz
Notes
1. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage:
∆I IPhoto
PSRR = ------------------∆V CC
For example, a +10 mV disturbance on VCC at 10 MHz will typically add an extra 20 nA to the photodiode current.
The external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with
an external capacitor of 1 nF.
2. The pulse width distortion (PWD) is <5% over the whole input current range. The PWD is defined as:
pulse width
PWD =  ------------------------------ – 1 × 100% where T is the clock period. The PWD is measured differentially with


T
PRBS pattern of 10−23.
3. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise
performance is measured differentially.
2000 Mar 28
10
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
TYPICAL PERFORMANCE CHARACTERISTICS
MGU112
40
CC
(mA)
38
MGU113
34.8
handbook,
I halfpage
handbook, halfpage
ICC
(mA)
34.4
36
34.0
(1)
34
(2)
33.6
(3)
32
33.2
30
28
−40
0
40
80
Tj (°C)
32.8
120
3
5
4
VCC (V)
6
(1) VCC = 5 V.
(2) VCC = 3.3 V.
(3) VCC = 3 V.
Fig.10 Supply current as a function of the junction
temperature.
Fig.11 Supply current as a function of the supply
voltage.
MGU114
825
MGU115
920
handbook, halfpage
handbook, halfpage
Vi
(mV)
Vi
(mV)
823
840
(1)
(2)
821
(3)
760
819
680
−40
817
3
4
5
VCC (V)
6
0
40
80
Tj (°C)
120
(1) VCC = 5 V.
(2) VCC = 3.3 V.
(3) VCC = 3 V.
Fig.12 Input voltage as a function of the supply
voltage.
2000 Mar 28
Fig.13 Input voltage as a function of the junction
temperature.
11
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
MGU116
1.68
Vo(cm)
MGU117
1.85
handbook, halfpage
handbook, halfpage
Vo(cm)
(V)
(V)
1.675
(1)
1.75
(1)
1.67
(2)
1.665
1.65
(2)
1.66
1.55
−40
1.655
3
4
5
VCC (V)
6
0
40
80
Tj (°C)
120
(1) VCC − VOUT.
(2) VCC − VOUTQ.
VCC = 5 V.
(1) VCC − VOUT.
(2) VCC − VOUTQ.
Fig.14 Common mode voltage at the output as a
function of the supply voltage.
Fig.15 Common mode voltage at the output as a
function of the junction temperature.
2000 Mar 28
12
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
APPLICATION AND TEST INFORMATION
10 µH
handbook, full pagewidth
VP
22 nF
680 nF
VCC
8
DREF
1
7
TZA3043T
IPhoto
6
OUTQ(1)
3
4
GND
5
GND
100 nF
Zo = 50 Ω
100 nF
OUT(1)
1 nF
2
Zo = 50 Ω
R3
50 Ω
R4
50 Ω
GND
MGU101
(1) For TZA3043BT pin 7 is OUT and pin 6 is OUTQ.
Fig.16 Application diagram.
2000 Mar 28
13
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
680 nF
(1)
(1)
22 nF
100 nF
DREF
VCCA
14
7
1.5 nF
OUTQ(2)
TZA3043T
4 pF
1 nF
IPhoto
6
3
2
4
GND
OUT(2)
noise filter:
1-pole, 800 MHz
5
GND
100
Ω 1.5 nF
GND
DIN
RSET
16
6
1
100 nF
180 kΩ
VCC
8
(1)
CF
7
Vref
15
VCCD
14
4
13
DOUT
TZA3044
DINQ
data out
5
12
1
3
AGND
9
8
SUB
JAM
10
STQ
Philips Semiconductors
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
handbook, full pagewidth
2000 Mar 28
VCC
ST
DOUTQ
11
DGND
level-detect
status
50 Ω
50 Ω
VCC − 2 V
MGU102
Fig.17 Gigabit Ethernet/Fibre Channel receiver using the TZA3043T and TZA3044.
Product specification
(1) Ferrite bead e.g. Murata BLM10A700S.
(2) For TZA3043BT pin 7 is OUT and pin 6 is OUTQ.
TZA3043; TZA3043B
1 kΩ
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Test circuits
handbook, full pagewidth
R = 470 Ω, Zi = 28 Ω
ZT = s21.(R + Zi) . 2
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT 1
PORT 2
Zo = 50 Ω
Zo = 50 Ω
VCC
223-1 PRBS
100 nF
PATTERN
GENERATOR
C
C
D
D
TR
10 nF 470 Ω
51 Ω
OUT
IPhoto
1
OUTQ
TZA3043
SAMPLING
OSCILLOSCOPE/
TDR/TDT
100 nF
C IN
OM5803
2
Zo = 50 Ω
MGU106
Fig.18 Electrical test circuit.
2000 Mar 28
15
TR
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
handbook, full pagewidth
TZA3043; TZA3043B
LIGHTWAVE MULTIMETER
−9.54 dBm
OPTICAL
INPUT
ERROR DETECTOR
OPTICAL ATTENUATOR
Data
in
0 dBm/1300
IN
OUT
90% 10%
Clock
in
VCC
BLM
22 nF
223-1 PRBS
PATTERN
GENERATOR
C
C
D
D
DREF
LASER DRIVER
DIN
IPhoto
TR
C IN
PIN
OM5802
OUTQ
TZA3043
DINQ
TZA3041
100 nF
OUT
Laser
10 nF
OM5804
100 nF
SAMPLING
OSCILLOSCOPE/
TDR/TDT
TR
1
2
Zo = 50 Ω
1.24416 GHz
MGU107
Fig.19 Optical test circuit.
2000 Mar 28
16
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
MGU108
handbook, full pagewidth
Fig.20 Differential output with −25 dBm optical input power [input current of 5.17 µA (p-p)].
MGU109
handbook, full pagewidth
Fig.21 Differential output with −15 dBm optical input power [input current of 51.7 µA (p-p)].
2000 Mar 28
17
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
MGU110
handbook, full pagewidth
Fig.22 Differential output with −5 dBm optical input power [input current of 517 µA (p-p)].
MGU111
handbook, full pagewidth
Fig.23 Differential output with −2 dBm optical input power [input current of 1030 µA (p-p)].
2000 Mar 28
18
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
BONDING PAD LOCATIONS
COORDINATES(1)
SYMBOL
PAD TZA3043U
PAD TZA3043BU
x
y
DREF
1
1
95
881
GND
2
2
95
618
GND
3
3
95
473
IPhoto
4
4
95
285
GND
5
5
215
95
GND
6
6
360
95
GND
7
7
549
95
GND
8
8
691
95
OUT
9
10
785
501
OUTQ
10
9
785
641
VCC
11
11
567
1055
VCC
12
12
424
1055
AGC
13
13
259
1055
Note
GND
3
IPhoto
4
VCC
VCC
AGC
VCC
VCC
13
12
11
10
TZA3043U
9
5
6
7
OUTQ
OUT
DREF
1
1300 GND
µm
2
GND
3
IPhoto
4
8
9
5
6
7
8
OUT
OUTQ
1030
µm
0
GND
0
y
GND
0
GND
x
GND
x
10
TZA3043BU
GND
2
11
GND
1300 GND
µm
12
GND
1
13
GND
DREF
AGC
1. All coordinates are referenced, in µm, to the bottom left-hand corner of the die.
MGU099
Fig.24 Bonding pad locations of the TZA3043U.
2000 Mar 28
0
y
1030
µm
MGU100
Fig.25 Bonding pad locations of the TZA3043BU.
19
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
2.1 µm PSG (PhosphoSilicate Glass) on top of 0.65 µm oxynitride
Bonding pad dimension
minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
Metallization
1.22 µm W/AlCu/TiW
Thickness
380 µm nominal
Size
1.03 × 1.30 mm (1.34 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
<440 °C; recommended die attach is glue
Attach time
<15 s
2000 Mar 28
20
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.244
0.039 0.028
0.050
0.041
0.228
0.016 0.024
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03
MS-012
2000 Mar 28
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
21
o
8
0o
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Mar 28
22
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable(2)
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not
PLCC(3), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
REFLOW(1)
suitable
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Mar 28
23
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
DEFINITIONS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
period of ninety (90) days from the date of Philips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips
Semiconductors has no control of third party procedures in
the sawing, handling, packing or assembly of the die.
Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or
systems after third party sawing, handling, packing or
assembly of the die. It is the responsibility of the customer
to test and qualify their application in which the die is used.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
2000 Mar 28
24
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
25
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
26
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
27
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/200/02/pp28
Date of release: 2000
Mar 28
Document order number:
9397 750 06817